• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.119-119
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• 2010

We report strong exciton transition and exciton-phonon couplings in photoluminescence (PL) of ZnO thin films grown on MgO/sapphire (buffer/substrate) by plasma-assisted molecular beam epitaxy. The PL spectra at 10 K showed the intensity of the dominant emission, donor-bound exciton transition of front surface (top surface, the latter part in growth) is found to be about 100 times higher than that of back surface (in-depth bottom area, the initial part), while the room temperature PL spectra showed dominant contributions from the free exciton emissions and phonon-replicas of free excitons for front surface and back surface, respectively, It could be attributed to the strong contributions of exciton-phonon coupling. Time resolved PL spectra reveal that the life time of exciton recombination from the front surface are longer than those from back surface. This is most probably due to the fact that reduction of non-radiative recombination in the front surface. This investigation indicates that the existence of native defects or trap centers which can be reduced by the proper initial condition in growth and the exciton-phonon interaction couplings play an important role in optical properties and crystal quality of ZnO thin films.

• 공업화학
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• 제32권1호
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• pp.55-60
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• 2021

실내 환경 오염물질인 휘발성 유기화합물(volatile organic compounds)인 초산에 대한 핏치계 활성탄소섬유의 흡착 성능을 향상시키기 위해 불소화를 진행하였다. 불소화에는 플라즈마 불소화와 직접 기상 불소화법을 사용하였으며, 두 가지 방식으로 불소화한 활성탄소섬유의 초산가스 흡착 성능을 고찰하였다. 불소가 도입된 활성탄소섬유의 표면 특성을 알아보기 위하여 X선 광전자 분광법(XPS)을 분석하였고 그 기공특성은 77K 질소 흡착법을 통하여 분석하였다. 초산가스의 흡착 성능은 가스 크로마토그래피를 통하여 측정하였으며, 플라즈마 불소화 된 활성탄소섬유의 파과시간이 790 min으로 650 min인 미처리 활성탄소섬유에 비해 파과시간이 지연되었음을 확인할 수 있으나, 직접 기상 불소화 표면처리한 활성탄소섬유의 파과시간은 390 min으로 오히려 흡착성능이 저해되었다. 이는 플라즈마 불소화 된 활성탄소섬유는 그 비표면적의 변화 없이, 표면에 도입된 불소 관능기가 초산가스(CH3COOH)와 정전기적 인력으로 흡착성능이 증가하였다. 반면, 직접 기상 불소화 된 활성탄소섬유는 그 비표면적이 55%까지 크게 감소하여 초산가스에 대한 물리적 흡착 효과가 현저히 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 한국표면공학회지
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• 제29권5호
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• pp.345-349
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• 1996

The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1491-1494
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• 2006

We report a method for reducing the address discharge delay. The address discharge delay was reduced when the MgO protective layer was made on the dielectric area which was made rough intentionally. The delay reduction was more pronounced in the formative delay.

• 한국분말재료학회지
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• 제19권1호
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• pp.6-12
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• 2012

Electricity is generated by the combined reactions of hydrogen oxidation and oxygen reduction which occur on the Pt/C catalyst surface. There have been lots of researches to make high performance catalysts which can reduce Pt utilization. However, most of catalysts are synthesized by wet-processes and a significant amount of chemicals are emitted during Pt/C synthesis. In this study, Pt/C catalyst was produced by arc plasma deposition process in which Pt nano-particles are directly deposited on carbon black surfaces. During the process, islands of Pt nano-particles were produced and they were very fine and well-distributed on carbon black surface. Compared with a commercialized Pt/C catalyst (Johnson & Matthey), finer particle size, narrower size distribution, and uniform distribution of APD Pt/C resulted in higher electrochemical active surface area even at the less Pt content.

• 대한화장품학회지
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• 제50권1호
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• pp.59-65
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• 2024

플라즈마 화장품은, 플라즈마의 제형 내 장기 안정성을 확보하는 것이 중요하다. 이번 연구는 효율적인 플라즈마 화장품 개발을 위하여 용기 적합성을 검토하였다. 플라즈마가 닿는 표면적을 달리하여, 4 cm², 25 cm², 75 cm², 175 cm² 용기 별로 화장품 제조용 플라즈마를 주입 후, 질소 플라즈마 주요 활성 종인 nitric oxide (NO)의 양을 추적 분석 하였다. 그 결과, 플라즈마에 노출된 표면적과 안정도는 반비례 경향을 나타내었고, 4 cm² 용기에서 가장 효과적이었다. 추가적으로, 25 mm, 40 mm, 50 mm 바이알 병에 플라즈마를 처리하였고, 그 결과 공기에 노출된 용기의 표면 면적이 작은 25 mm에서 NO의 상대적 장기 안정성이 확보되었다. 화장품 제형으로 수상 미스트(water mist)와 층 분리 미스트(stratified mist)를 선택하여 수상층 부분에 NO 플라즈마를 주입 후 제형의 성상 및 주입한 NO 플라즈마의 상태 변화를 관찰하였다. 두 제형에서 NO 플라즈마의 주입량은 수상 미스트가 층 분리 미스트보다 약 1.5 배 가량 높았으며, 층 분리 미스트는 시간에 따라 점차 감소하여 3 주 후, 소실되는 것이 확인되었다. 저온(4 ℃), 실온(25 ℃), 고온(37 ℃, 50 ℃)에서 질소 플라즈마의 안정도를 진행하였다. 그 결과 수상 미스트는 안정도에 영향을 미치지 않는 것을 확인하였지만, 층 분리 미스트는 유상층에서 색 변화를 관찰하였다. 종합적으로, 본 연구는 질소 플라즈마의 용기 적합성을 제시하고 있으며 화장품 제형 내 주입된 질소 플라즈마의 안정성 확보의 중요성을 시사하고 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.146-146
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• 2016

Zinc Oxide (ZnO) was known as a promising material for surface acoustic wave devices, gas sensors, optical devices and solar cells due to piezoelectric material, large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature. In particular, the alignment of ZnO nanostructures into ordered nanoarrays can bring about improved sensitivity of devices due to widen the surface area to catch a lot of gas particle. Oxygen plasma treatment is used to specify the nucleation site of round patterned ZnO nanorods growth. Therefore ZnO nanorods were grown on a quartz substrate with patterned polystyrene monolayer by hydrothermal method after oxygen plasma treatment. And then, we carried out nanostructures by adjusting the diameter of the arranged ZnO nanorods according to polystyrene spheres of various sizes. The obtained ZnO nanostructures was characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM).

• Journal of Information Display
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• 제2권4호
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• 한국표면공학회지
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• 제30권6호
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• pp.365-373
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• 1997

316L and 420 Stainless steels were deposited onto AZ9ID commercial magnesium alloy by plasma spray process with various gas flow rate of, TEX>$H_2$ secondary gas. And hardness as well as were track volume, coefficient of friction also had been measured. wear and hardness were measured by using reciprocal configuration tribometer and microghardness tester, respectively. Also, the microstructure of the coatings surface the cross sectional area of coating surface and cross sectional area of coaing/Substrate interface had been analyzed with Scanning Electron Microscope(SEM) and Optical microscope(OM). Finally, optimal process parameters for the improvement of coating efficiency such as mechanical property and wear behavior were examined.