• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.1
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• pp.187-195
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• 1996

The purpose of this paper is to provide an algorithm in which the procedure of constructing a superstate transition matrix for trellis codes is reduced and, as a result, make it easier to evaluate the performance of a TCM scheme when the generalized transfer function method is used. In this paper, an algorithm for constructing a superstate transition matrix and an algorithm for reducing the matrix easily are addressed and applied to an MTCM scheme as an example. It is shown that the algorithm is very useflul for trellis codes with a large number of states and/or parallel transitions.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.