• 제목/요약/키워드: Superlattice

검색결과 175건 처리시간 0.025초

열벽적층성장에 의하여 제작된 ZnS/ZnSe 초격자의 X-선 회절분석 (X-ray diffraction analysis of ZnS/ZnSe superlattices prepared by hot wall epitaxy)

  • Yong Dae Choi;A. Ishida;Fujiyasu, H.
    • 한국결정성장학회지
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    • 제6권3호
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    • pp.377-385
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    • 1996

  • ZnS/ZnSe 초격자가 열벽적층성장에 의하여 GaAs(100) 기판 위에 성장되었으며 그 구조가 x-선 회절에 의하여 분석되었다. 변형된 초격자의 x-선 회절은 각 층의 두께, 변형, 상호확산 그리고 초격자 주기의 변동에 대한 유용한 정보를 제공한다. S와 Se의 상호확산의 길이는 $2\;{\AA}$ 이하인 것으로 추정된다.

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Electrical and Photoluminescence Characteristics of Nanocrystalline Silicon-Oxygen Superlattice for Silicon on Insulator Application

  • Seo, Yong-Jin
    • KIEE International Transactions on Electrophysics and Applications
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    • 제2C권5호
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    • pp.258-261
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    • 2002

  • Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

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미세구조 분석을 이용한 저밀도 결함을 가진 GaN계 반도체 연구 (The study of GaN-based semiconductors with low-defect density by microstructural characterization)

  • 조형균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.424-427
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    • 2003

  • We have investigated the microstructural analysis of epitaxial lateral overgrowth (ELO), pendeoepitaxy (PE), and superlattice structures used as technology for the reduction of structural defects like dislocation in nitride semiconductors using transmission electron microscopy. We confirmed that the regrowth process such as ELO and PE is very effective technique on the reduction of threading dislocation (less than $10^6/cm^2$) in the specific area. However, to decrease the defect density in the whole nitride films and the suppress the generation of defect by regrowth, we should find the optimized conditions. Besides, the process using double PE and AlGaN/GaN superlattice structure showed no effect on the defect reduction up to now.

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수소기처리에 의한 수소화된 비정질규소의 안정성에 관한 연구 (The Stability of Hydrogenated Amorphous Silicon by Hydrogen Radical Annealing)

  • 이재희;이원식
    • 한국진공학회지
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    • 제5권1호
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    • pp.73-76
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    • 1996

  • We have prepared hydrogenated amophous silicon (a-si : H) films with superlattice structure by hydrogen radical anneling(HRA) technique. We have studied the preparation of a-Si :H films by HRA and the optical & electronic characteristics. Optical band gap and the hydrogen contents in the a Si : H film is decreased as HRA time increased. We first report a -Si : H film prepared by periodicdeposition of a-Si : H layer and HRA have the superlattice structure using TEM . After 1 hour light soaking on the a-Si :H film prepared by HRA, there are no difference in the temperatre dependence of dark conductivity and the conductivity activation energy. An excellent stability for light in a-Si :H films by HRA can be explained using the long-range structural relaxation of the amorphous network and the propertiesof light -induced defects(LID) proposed by Fritzsche.

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