• Title/Summary/Keyword: Super Grain Silicon (SGS)

Search Result 3, Processing Time 0.02 seconds

Development Status of Equipment for Mass Production of AMOLED Panels Using 'Super Grain Silicon' Technology

  • Hong, Jong-Won;Na, Heung-Yeol;Chang, Seok-Rak;Lee, Ki-Yong;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.1136-1139
    • /
    • 2009
  • Recently, various Ni doping systems and thermal annealing systems have been developed for fabrication of polycrystalline silicon film using SGS (super grain silicon) for medium and largesize AMOLED panels. In this study, we compare the potential of Ni doping systems including ALD (atomic layer deposition), AMD (atmospheric metal deposition), in-line sputter, and crystallization annealing systems including batch type furnace, inline furnace, and RTA (rapid thermal annealing) developed for the SGS method. Additional requirements for those systems to be used for mass production of large AMOLED TVs are suggested based on evaluation results for both poly-Si films and TFT backplanes.

  • PDF

Trend of Crystallization Technology and Large Scale Research for Fabricating Thin Film Transistors of AMOLED Displays (AMOLED 디스플레이의 박막트랜지스터 제작을 위한 결정화 기술 동향 및 대형화 연구)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin;Min, Youngsil
    • Journal of Convergence for Information Technology
    • /
    • v.9 no.5
    • /
    • pp.117-124
    • /
    • 2019
  • This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

Effective Characterization Methods of Polycrystalline Silicon Films Fabricated by Ni Induced Crystallization

  • Koo, Hyun-Woo;Maidanchuk, Ivan;Jung, Jae-Wan;Lee, Ki-Yong;Berkeley, Brian H.;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.250-253
    • /
    • 2009
  • Effective methods for monitoring the quality of polycrystalline silicon (poly-Si) films are discussed. Raman spectroscopy is typically used to determine crystallinity of poly-Si, but this method has limitations for data gathering on large substrates for mass production of poly-Si TFT backplanes. Spectroscopic ellipsometry is proposed as an alternative for fast and simple estimation of poly-Si quality on large substrates. By using both ellipsometry and Raman spectroscopy, it is possible to determine whether the quality and uniformity of the poly-Si films meet the criteria required for mass production of TFT backplanes for AMOLED panels.

  • PDF