• 한국표면공학회지
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• 제28권6호
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.196-203
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• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

• 대한전자공학회논문지TC
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• 제46권10호
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• pp.63-71
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• 2009

여러 가지 기판 두께에서 동작 주파수를 일정하게 유지하면서 좋은 방사 특성을 가지는 핀 배열을 가지는 패치 안테나에 대해 연구하였다. 수평방향으로의 방사를 최대로 억제시키는 핀 배열 패치 안테나의 패치 길이가 기판 두께가 증가함에 따라 작아짐을 볼 수 있었다. 핀 배열 패치 안테나는 기본 패치 안테나보다 수평방향으로의 방사가 크게 억제되고 전방방사 이득이 증가하며 후방방사는 감소함을 볼 수 있다. 또한 핀 배열 패치 안테나의 E-plane 방사 패턴의 Half-power beamwidth가 기본 패치 안테나보다 작아져 안테나의 지향성이 향상됨을 볼 수 있다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.596-602
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD)radio frequency plasma-assisted chemical vapor deposition). In order to increased the nucleation density, the WC-Co substrate was polished with 3${\mu}m$ diamond paste. And the WC-Co substrate was preatreated in $HNO_3\;:\;H_2O$ = 1:1 and $O_2$ plasma. In $H_2-CH_4$ gas mixture, the crystallinity of thin film increased with decreasing $CH_4$ concentration at 800W discharge power and 20torr reaction pressure. In $H_2-CH_4-O_2$ gas mixture, the crystallinity of thin film increased with increasing $O_2$ concentration at 800W discharge power, 200torr reaction pressure and 4% $CH_4$ concentration.

• Journal of information and communication convergence engineering
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• 제13권2호
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• pp.81-85
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• 2015

A 94-GHz phased array antenna using a log-periodic antenna has been developed on a GaAs substrate. The developed phased array antenna comprises four log-periodic antennas, a phase shifter, and a Wilkinson power divider. This antenna was fabricated using the standard microwave monolithic integrated circuit (MMIC) process including an air bridge for unipolar circuit implementations on the same GaAs substrate. The total chip size of the fabricated phased array antenna is 4.8 mm × 4.5 mm. Measurement results showed that the fabricated phased array antenna had a very wide band performance from 80 GHz to 110 GHz with return loss characteristics better than -10 dB. In the center frequency of 94 GHz, the fabricated phased array antenna showed a return loss of -16 dB and a gain of 4.43 dBi. The developed antenna is expected to be widely applied in many applications at W-band frequency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.354-355
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• 2007

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from 100[$^{\circ}C$] to 300[$^{\circ}C$] at intervals of 50[$^{\circ}C$].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.412-413
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• 2007

We report on the electrical, optical, and structural properties of indium zinc tin oxide (IZTO) anode films grown at room temperature on glass substrate. The IZTO anode films grown by a RF magnetron sputtering were investigated as functions of RF power, working pressure, and process time in pure Ar ambient. To investigate electrical, optical and structural properties of IZTO anode films, 4-point probe, Hall measurement, UV/Vis spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM), and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $13.88\;{\Omega}/{\square}$, average transmittance above 80 % in visible range were obtained from optimized IZTO anode films grown on glass substrate. These results shown the amorphous structure regardless of RF power and working pressure due to low substrate temperature.

• 한국초전도ㆍ저온공학회논문지
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• 제11권1호
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• pp.5-8
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• 2009

MgO nanodots have been deposited and formed on top of the substrate surface. Mg was sputtered to form the MgO nanodots on the single crystal substrates by rf-sputtering method and followed by heat treatment in the oxygen ambient. The deposition and formation of MgO nanodots have been controlled systematically using the process variables such as substrate temperature, sputtering time, and rf-power. As the substrate temperature increased from the room temperature the density of MgO nanodots decreased. The optimal conditions of MgO nanodots formation using the rf-sputtering was investigated and the maximum density of more than $230/{\mu}m^2$ on single crystal substrates was obtained when the rf-power of 100 watts was applied for 30 seconds at room temperature. The typical size of MgO nanodots was identified to be <160 nm(diameter) and 4-30nm (height) by atomic force microscopy. The modulated surface morphology was examined through surface images and cross-section analysis and discussed for the artificial pinning sites in the superconducting films.

• 한국산학기술학회논문지
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• 제12권7호
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• pp.3169-3175
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• 2011

본 논문에서는 가유전체 기판구조의 증가하는 유효 유전율 효과를 이용하여 방향성결합기를 소형화하여 설계하는 것에 대하여 기술한다. 방향성결합기는 RF 신호의 크기를 간접적으로 측정하거나 신호전력을 결합하는데 널리 사용되는 회로이다. 가유전체 기판구조는 다수의 도금된 비어홀에 의하여 표준형 기판보다 유효 유전율이 증가하는 특성을 지니는데, 이 특성이 바로 회로 소형화에 이용된다. 한 예로써 2GHz대에서 15dB의 결합계수를 갖는 방향성결합기가 표준형 기판과 가유전체 기판구조에 대하여 각각 설계되고 그 크기가 비교된다. 표준형 회로와 비교할 때, 가유전체 기판구조로 소형화된 방향성결합기는 동일한 성능을 유지하면서도 1/3로 줄어든 회로의 크기를 갖는다. 또한 소형화된 방향성결합기를 제작하여 측정한 성능은 예측 결과와도 매우 유사함을 보여준다. 측정한 성능 결과는 2GHz대에서 -14.62B의 결합도, -24.1dB의 정합도, -0.38dB의 삽입손실 특성을 보여준다.

• 한국재료학회지
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• 제27권8호
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• pp.397-402
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• 2017

We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.