• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.713-715
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• 2009

Preferred orientation of MgO protection layer is controlled via adjusting diffusion of adatom between (111) plane with highest neighbor atoms and (200) plane with lowest neighbor atoms. The diffusion of adatom could be modulated by the factors such as substrate temperature, deposition rate, and extra energy applied on adatom like ion beam energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• 한국진공학회지
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• 제8권3A호
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• pp.194-200
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• 1999

In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• 한국재료학회지
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• 제25권3호
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.446-449
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• 2005

The alignment property of liquid crystals on the two-easy axes substrate is investigated. The two-easy axes substrate frustrates the orientation of the LCs next to the substrate, and hence influences the birefringence of the LC cell. Experimental findings reveal that the ratio of the rubbing strengths in the different rubbing directions and the cell thickness substantially influence the birefringence of the LC cell. The surface anchoring energetic competition between the different rubbing directions contributes to the observed results.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.34-42
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• 2001

The influences of substrate temperature were studied when fabricating KLN thin film on amorphous substrate using an rf-magnetron sputtering method. Investigating the vaporization temperature of the each element, the excess ratio of target and the optimum deposition conditions were effectively selected when thin filmizing a material which have elements with large difference fo vaporization temperature. In order to compensate K and Li which have lower vaporization temperatures than Nb, KLN target of composition excess with K of 60% and Li of 30% was used. KLN thin film fabricated on Corning 1737 glass substrate had single KLN phase above 58$0^{\circ}C$ of substrate temperature and crystallized to c-axis direction. The optimum conditions were rf power of 100W, process pressure of 150mTorr, and substrate temperature of $600^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.113-114
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• 2005

We present the effect of substrate temperature on the structural and optical properties of ZnO films grown on sapphire substrate by pulsed laser deposition. Growing at higher substrate temperature results in an increase in the surface roughness. The optimum c-axis orientation of the ZnO films occurs at the substrate temperature of 700$^{\circ}C$ The decay time shows a rapid increase in the substrate temperature from 400$^{\circ}C$ to 500$^{\circ}C$ and falls down gradually as the substrate temperature is approached to 700$^{\circ}C$.

• 한국결정학회지
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• 제6권1호
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• pp.14-26
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• 1995

Hot Filament CVD법에 의해 증착된 다이아몬드 박막의 기판온도와 증착시간 변화에 따르는 표면형상 변화를 관찰함으로써 그 증착기구를 규명하고자 하였다. 기판온도가 낮을 경우에는 비정질 탄소 및 DLC(diamond like carbon)가 증착되고 기판온도가 증가함에 따라 사가형의 (100)명으로 구성된 입자를 가지는 다이아몬드 박막이 증착되었으며 매우 높은 기판온도에서는 (100)명과 (111)명으로 이루어진 결정외형을 가지는 입자들로 구성되는 다이아몬드 박막이 증착되었다. 다이아몬드 박막의 (100) 우선배향성은 증착시의 비교적 높은 과포화도에 기인하는 것으로 생각되며, 이러한 (100) 우선배향성을 가지는 박막은 결정면내에 twin을 함유하지 않으므로 단결정박막으로의 성장가능성이 크다. 기판온도가 증가해도 다이아몬드 박막의 입자크기는 증가하지 않았으며 시간에 따른 증가양상도 온도에 관계없이 비슷한 경향을 보였다. 그러나 필라멘트 온도가 일정할 때 다이아몬드 박막의 핵 밀도는 기판온도가 높을수록 증가하였으며 시간에 따른 증가폭도 기판온도가 높을수록 더 크게 나타났다.

• 한국표면공학회지
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• 제40권3호
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• pp.113-116
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• 2007

Titanium dioxide ($TiO_2$) films were deposited by RF reactive magnetron sputtering on non-alkali glass and single crystal MgO (100) substrate at substrate temperature of $400^{\circ}C$. Micro structures of $TiO_2$ films were investigated by XRD, FE-SEM, and Pole figure measurements. $TiO_2$ films deposited on glass substrate showed preferred orientation of anatase (101), whereas $TiO_2$ films deposited on the MgO single crystal substrate showed hetero-epitaxial anatase (100). $TiO_2$ film grown on MgO substrate showed higher photoctalytic activity than that of glass substrate.