• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.237-238
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• 2008

The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.1
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• pp.72-75
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• 2016

In this paper, we proposes a internal antenna for wireless DVI dongle device using the folded monopole structure. The proposed antenna uses a basic structure of spiral and monopole. The antenna optimized for parameters length, gap, width, and rectangle of folded monopole antenna using the spiral structure. To confirm the characteristics of the antenna parameters, HFSS from ANSYS Inc. was used for the analysis. We used an FR4 dielectric substrate with a dielectric constant of 4.4. The DVI dongle size of the proposed antenna is $50{\times}40{\times}1.6mm$, and the size of the antenna area is $10{\times}40mm$. There is a value of return loss less then -10dB in 2.4GHz and 5.8GHz, band and the maximum antenna gain is -4.13dBi. The utilization possibility of the wireless DVI Dongle antenna have a folded monopole with spiral shape could be confirmed according to compare and analyze the simulation and measurement data.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.155-164
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• 2020

Here we report our preliminary results about nickel phosphide (Ni-P) electroless coating on the surface of cellulose paper (CP) and its feasibility as the anode for lithium (Li) batteries. In particular, CP can act as a flexible skeleton to maintain the mechanical structure, and the Ni-P film can play the roles of both the anode substrate and the active material in Li batteries. Ni-P films with different P contents were plated uniformly and compactly on the microfiber strands of CP. When they were tested as the anode for Li battery, their theoretical capacity per physical area was comparable to or higher than hypothetical pure graphite and P film electrodes having the same thickness. After the large irreversible capacity loss in the first charge/discharge process, the samples showed relatively reversible charge/discharge characteristics. All samples showed no separation of the plating layer and no detectable micro-cracks after cycling. When the charge cut-off voltage was adjusted, their capacity retention could be improved significantly. The electrochemical result was just about the same before and after mechanical bending with respect to the overall shape of voltage curve and capacity.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.6
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• pp.964-973
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• 2008

In this study, a short-wavelength coplanar-type transmission line employing periodic ground structure (PGS) was developed for application to miniaturized on-chip passive component on Si Radio Frequency Integrated Circuit (RFIC). The transmission line employing PGS showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PGS structure was 57 % of the conventional coplanar-type transmission line on Si substrate. Using the theoretical analysis. basic characteristics of the transmission line employing PGS (e.g., bandwidth. loss, impedance, and resonance characteristics) were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components on silicon RFIC. According to the results. the bandwidth of the transmission line employing PGS was more than 895 GHz as long as T is less than 20${\mu}m$, and the resonance characteristic was observed in 1239 GHz, which indicates that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.

• BMB Reports
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• v.43 no.6
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• pp.419-426
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• 2010

Aeromonas hydrophila is a bacterial pathogen that infects a large number of eukaryotes, including humans. The UDP-galactose 4'-epimerase (GalE) catalyzes interconversion of UDP-galactose to UDP-glucose and plays a key role in lipopolysaccharide biosynthesis. This makes it an important virulence determinant, and therefore a potential drug target. Our earlier studies revealed that unlike other GalEs, GalE of A. hydrophila exists as a monomer. This uniqueness necessitated elucidation of its structure and active site. Chemical modification of the 6xHis-rGalE demonstrated the role of histidine residue in catalysis and that it did not constitute the substrate binding pocket. Loss of the 6xHis-rGalE activity and coenzyme fluorescence with thiol modifying reagents established the role of two distinct vicinal thiols in catalysis. Chemical modification studies revealed arginine to be essential for catalysis. Site-directed mutagenesis indicated Tyr149 and Lys153 to be involved in catalysis. Use of glycerol as a cosolvent enhanced the GalE thermostability significantly.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.861-864
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• 1999

We designed and fabricated microstrip line fed QMSAs(Quarter-Wavelength Microstrip Antenna) for 850〔MHz〕 band on the CGP-500 Copper-clad Laminates substrate (CHUKOH company) with $\varepsilon$$_{r}$＝2.6, H＝1.6〔mm〕( $\pm$0.08), where the width of the radiation patch is identical with that of the ground plane. The resonant frequencies and the return losses were measured by reducing the PSW(Partially Shorted Width) to 0〔mm〕, step by step, when the microstrip line width was 1.47〔mm〕, 2.93〔mm〕and 4.4〔mm〕separately. As a result, a good characterized antenna with a 11% reduced resonant length and a return loss -29.44〔㏈〕 was obtained when the total PSW was in the range of 70% of radiated patch width, compared to the conventional QMSA.A.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.195-198
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• 1999

A Bi$_4$Ti$_3$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM. The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG analysis. The BIT thin film deposited on Pt/Ta/SiO$_2$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100㎸/cm is 4.71$mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250㎸/cm, the remanent polarization (Pr) and the coercive field (Ec) are 5.92$mutextrm{A}$/$\textrm{cm}^2$ and 86.3㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.120-126
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• 1996

In the present study, we have studied on the characteristics of BST thin films with various Ba/Sr ratios by using sol-gel method. Barium-acetate, strontium-acetate and titanium isopropoxide are used as starting materials to fabricate BST thin films by sol-gel method. The fabrication conditions are estabilished through the TG-dT analyses and XRD measurements. BST thin films with the Ba/Sr ratios of 90/10, 70/30, 50/50 and 30/70 were deposited on the Pt/Ta/SiO$_{2}$Si substrate with the estabilished sol-gel process, and their characteristics were examined. The relative permittivity and the leakage current density at 5V vary from 287 to 395 and from 2.3 to 220${\mu}$A/cm$^{2}$, respectively, with various Ba/Sr ratio. Among the films investigatd in this research, BST (70/30) thin film shows the best relative permittivity and dielectric loss of BST (70/30) thin film are 395 and 0.045, respectively and the leakage current density at 5V is 2.3${\mu}$A/cm$^{2}$.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.193-196
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• 2000

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band. The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method has a cutoff frequency of 0.9 CHz with a 0.01 dB ripple level. The coupled line type low-pass filter with strip line configuration was fabricated by using a high-temperature superconducting (HTS : YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on MgO(100) substrate. Since the HTS coupled tine type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 6.2 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency.