• 제목/요약/키워드: Substrate loss

검색결과 801건 처리시간 0.03초

Design of a 5.8 GHz Narrow Band-pass Filter with Harmonics Suppression (고조파가 억제된 5.8 GHz 협대역 대역통과 여파기)

  • Yoon, Ki-Cheol;Lee, Jong-Chul
    • The Journal of Korean Institute of Communications and Information Sciences
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    • 제33권2A호
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    • pp.167-173
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    • 2008
  • In this paper, the flexible narrow bandpass filters (BPFs) with ${\lambda}$g/4 short and ${\lambda}$g/2 open stubs by microstrip line on duroid substrate are suggested. These BPFs with narrow bandwidth show flexible bandwidth with variation of the position of the stubs using the Qe (external quality factor) without changing the impedance value at microwave range. On the other hand, by replacing the series quarter-wavelength connecting lines with the equivalent T-shaped line of bandstop filter(BSF), the compact stub bandpass filter with harmonics suppression can be realized. The BPF with ${\lambda}$g/4 short stubs shows the insertion loss of 2.1 dB and the return loss of 18 dB and BPF with ${\lambda}$g/2 open stubs shows the insertion loss of 1.2 dB and the return loss of 21.9 dB at the center frequency of 5.8 GHz and the bandwidth of 10 %.

Optimization of Solid State Fermentation of Mustard (Brassica campestris) Straw for Production of Animal Feed by White Rot Fungi (Ganoderma lucidum)

  • Misra, A.K.;Mishra, A.S.;Tripathi, M.K.;Prasad, R.;Vaithiyanathan, S.;Jakhmola, R.C.
    • Asian-Australasian Journal of Animal Sciences
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    • 제20권2호
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    • pp.208-213
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    • 2007
  • The objective of the experiment was to determine the optimum cultural [moisture levels (55, 60 and 70%), days of fermentation (7, 14 and 21), temperature (25 and $35^{\circ}C$) of incubation)] and nutritional parameters (urea addition (0 and 2%) and variable levels of single super phosphate (0.25 and 0.50% SSP)) for bio-processing of the mustard (Brassica campestris) straw (MS) under solid-state fermentation (SSF) system. The performance of SSF was assessed in terms of favorable changes in cell wall constituents, protein content and in vitro DM digestibility of the MS. Sorghum based inoculum (seed culture) of Ganoderma lucidum to treat the MS was prepared. The 50 g DM of MS taken in autoclavable polypropylene bags was mixed with a pre-calculated amount of water and the particular nutrient in the straw to attained the desired levels of water and nutrient concentration in the substrate. A significant progressive increase in biodegradation of DM (p<0.001), NDF (p<0.01) and ADF (p<0.05) was observed with increasing levels of moisture. Among the cell wall constituents the loss of ADF fraction was greatest compared to that of NDF. The loss of DM increased progressively as the fermentation proceeded and maximum DM losses occurred at 28 days after incubation. The protein content of the treated MS samples increased linearly up to the day $21^{th}$ of the incubation and thereafter declined at day $28^{th}$, whereas the improvement in in vitro DM digestibility were apparent only up to the day $14^{th}$ of the incubation under SSF and there after it declined. The acid detergent lignin (ADL) degradation was slower during the first 7 days of SSF and thereafter increased progressively and maximum ADL losses were observed at the day $28^{th}$ of the SSF. The biodegradation of DM and ADL was not affected by the variation in incubation temperature. Addition of urea was found to have inhibitory effect on fungal growth. The effect of both the levels (0.25 and 0.50) of SSP addition in the substrate, on DM, NDF, ADF, cellulose and ADL biodegradation was similar. Similarly, the protein content and the in vitro DM digestibility remain unaffected affected due to variable levels of the SSP inclusion in the substrate. From the results it may be concluded that the incubation of MS with 60 percent moisture for 21 days at $35^{\circ}C$ with 0.25 percent SSP was most suitable for MS treatment with Ganoderma lucidum. Maximum delignification, enrichment in the protein content and improvement in in vitro DM digestibility were achieved by adopting this protocol of bioprocessing of MS.

Deposition of ZnO Thin Films by RF Magnetron Sputtering and Cu-doping Effects (RF 마그네트론 스퍼터링에 의한 ZnO박막의 증착 및 구리 도우핑 효과)

  • Lee, Jin-Bok;Lee, Hye-Jeong;Seo, Su-Hyeong;Park, Jin-Seok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • 제49권12호
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    • pp.654-664
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    • 2000
  • Thin films of ZnO are deposited by using an RF magnetron sputtering with varying the substrate temperature(RT~39$0^{\circ}C$) and RF power(50~250W). Cu-doped ZnO(denoted by ZnO:Cu) films have also been prepared by co-spputtering of a ZnO target on which some Cu-chips are attached. Different substrate materials, such as Si, $SiO_{2}/Si$, sapphire, DLC/Si, and poly-diamond/Si, are employed to compare the c-axial growth features of deposited ZnO films. Texture coefficient(TC) values for the (002)-preferential growth are estimated from the XRD spectra of deposited films. Optimal ranges of RF powers and substrate temperatures for obtaining high TC values are determined. Effects of Cu-doping conditions, such as relative Cu-chip sputtering areas, $O_{2}/(Ar+O_{2})$ mixing ratios, and reactor pressures, on TC values, electrical resistivities, and relative Cu-compositions of deposited ZnO:Cu films have been systematically investigated. XPS study shows that the relative densities of metallic $Cu(Cu^{0})$ atoms and $CuO(Cu^{2+})$-phases within deposited films may play an important role of determining their electrical resistivities. It should be noted from the experimental results that highly resistive(> $10^{10}{\Omega}cm$ ZnO films with high TC values(> 80%) can be achieved by Cu-doping. SAW devices with ZnO(or Zn):Cu)/IDT/$SiO_{2}$/Si configuration are also fabricated to estimate the effective electric-mechanical coupling coefficient($k_{eff}^{2}$) and the insertion loss. It is observed that the devices using the Cu-doped ZnO films have a higher $k_{eff}^{2}$ and a lower insertion loss, compared with those using the undoped films.

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Comparison of Heating Behavior of Various Susceptor-embedded Thermoplastic Polyurethane Adhesive Films via Induction Heating (다양한 발열체가 분산된 폴리우레탄 접착 필름의 유도가열 거동 비교)

  • Kwon, Yongsung;Bae, Duckhwan;Shon, MinYoung
    • Composites Research
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    • 제30권3호
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    • pp.181-187
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    • 2017
  • The effect of nanoscopic and microscopic Fe, $Fe_3O_4$, and Ni particles and their shapes and substrate materials on the heating behavior of thermoplastic polyurethane (TPU) adhesive films was investigated via induction heating. The heat generation tendency of $Fe_3O_4$ particles was higher than that shown by Fe and Ni particles in the TPU adhesive films. When the Fe and Ni particle size was larger than the penetration skin depth, the initial heating rate and maximum temperature increased with an increase in the particle size. This is attributed to the eddy current heat loss. The heating behavior of the TPU films with Ni particles of different shapes was examined, and different hysteresis heat losses were observed depending on the particle shape. Consequently, the flake-shaped Ni particles showed the most favorable heat generation because of the largest hysteresis loss. The substrate materials also affected the heating behavior of the TPU adhesive films in an induction heating system, and the thermal conductivity of the substrate materials was determined to be the main factor affecting the heating behavior.

Dielectric Waveguide Filters Design Embedded in PCB Substrates using Via Fence at Millimeter-Wave (밀리미터파 대역에서 Via Fence를 이용한 PCB 기판용 유전체 도파관 필터 설계)

  • 김봉수;이재욱;김광선;강민수;송명선
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • 제15권1호
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    • pp.73-80
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    • 2004
  • In this paper, the implementation and embedding method of the existing air-filled waveguide-filters at millimeter-wave on general PCB substrate is introduced by systematically inserting the vias inside waveguide and mathematically manipulating the simple equations obtained ken the classical circular-post waveguide filter design. All the metal structures placed vertically such as side wall fur perfect ground plane and circular-post for signal control in the air-filled WR-22 waveguide are replaced with several types of via for constructing the bandpass-filter. Side wall and poles inside waveguide are realized by placing a series array of via and tuning the via diameter. The lengths of x, y, z axis are reduced in proportion to root square of employed substrate dielectric constant and especially the length of z axis can be more reduced due to the characteristics of the wave propagation. Because the mass production on PCB is possible without fabricating a large-scaled metal waveguide of WR-22 as input/output ports at millimeter-wave regime, the manufacturing cost is reduced considerably. Finally, when using multilayer process like LTCC for small-sized module, it is one of advantages to use only one layer f3r the filter fabrication. To evaluate the validity of this novel technique, order-3 Chebyshev BPF(Bandpass-Filter) centered at 40 GHz-band with a 2.5 % FBW (Fractional Bandwidth) were used. The employed substrate has relative dielectric constant of 2.2 and thickness of 10 mil of Rogers RT/Duroid 5880. Accroding to design and measurement results, a good performance of insertion loss of 2 ㏈ and return loss of -30 ㏈ is achieved at full input/output ports.

Effect of the Pore Structure on the Anodic Property of SOFC (SOFC 음극의 기공구조가 음극특성에 미치는 영향)

  • 허장원;이동석;이종호;김재동;김주선;이해원;문주호
    • Journal of the Korean Ceramic Society
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    • 제39권1호
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    • pp.86-91
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    • 2002
  • Solid Oxide Fuel Cells (SOFC) are of great interest of next generation energy conversion system due to their high energy efficiency and environmental friendliness. The basic SOFC unit consists of anode, cathode and solid electrolyte. Among these components, anode plays the most important role for the oxidation of fuel to generate electricity and also behaves as a substrate of the whole cell. It is normally requested that the anode materials should have the high electrical conductivity and gas permeability to reduce the polarization loss of the cell. In this study, the effect of pore former on the microstructure of anode substrate was investigated and thus on the electrical conductivity and the gas permeability. According to the results, microstructure and electrical conductivity of anode substrate were greatly influenced by the shape of pore former and especially by the anisotrpy of the pore former. The use of anisotropic pore former is supposed to deteriorate the cell performance by which the electrical conduction path is disconnected but also the effective gas diffusion path for the fuel is reduced.

A effect of the back contact silicon solar cell with surface texturing size and density (표면 텍스쳐링 크기와 밀도가 후면 전극 실리콘 태양전지에 미치는 영향)

  • Jang, Wanggeun;Jang, Yunseok;Pak, Jungho
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.112.1-112.1
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    • 2011
  • The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

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Substrate Characteristics of Sea Cucumber Stichopus japonicus Habitats in the West Coast of Korea (한국 서해안 돌기해삼(Stichopus japonicus)의 서식지 기질 특성)

  • Park, Kwang-Jae;Ryu, Sang-Ock;Baek, Young-Sook;Kim, Yeun-Seol;Kang, Hee-Woong;Han, Hyon-Sob
    • Korean Journal of Fisheries and Aquatic Sciences
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    • 제46권6호
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    • pp.886-891
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    • 2013
  • We analyzed surface sediments to explain the substrate characteristics of sea cucumber Stichopus japonicus habitat. The analyses included grain-size determination, water content (WC), loss on ignition (IL), chemical oxygen demand (COD), and acid volatile sulfide (AVS) content. We obtained data on sea cucumber density, weight, and length at each station in a marine farming area in the middle of Korea's Taean coast on the West (Yellow) Sea in May, 2012. The apparent density of S. japonicus was high in coarse and bimodal sediments, whereas it was low in fine and unimodal sediments. The mass of S. japonicus was greater in fine than in coarse sediments, showing a different trend from sea cucumber density. The values for WC, IL, COD, and AVS in surface sediments were higher in areas with high densities of S. japonicus than in areas with low sea cucumber densities. In particular, the concentration of AVS was much higher than the value proposed in Japanese criteria for areas with high S. japonicus density.

Electrical Properties of Ba0.66Sr0.34TiO3 Thin Films Fabricated by a Seed-layer Process (Seed-layer 공정을 이용한 Ba0.66Sr0.34TiO3박막의 제조 및 전기적 특성 연구)

  • 최덕영;박철호;손영국
    • Journal of the Korean Ceramic Society
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    • 제40권2호
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    • pp.198-205
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    • 2003
  • $Ba_{0.66}Sr_{0.34}TiO_3$ thin films and seed-layers were deposited on $Pt/Ti/SiO_2/Si$substrate by R.F. magnetron sputtering method. Effects of various substrate temperature conditions on electrical properties (such as capacitance and leakage current) of BST thin films were studied. The effect of seed-layer was also studied. When seed-layer was inserted between BST and Pt, the crystallization of the BST thin films was considerably improved and the processing temperature was lowered. Compared to the pure BST thin films, dielectric constant, dielectric loss, and leakage current of BST thin films deposited on the seed-layer were considerably improved. It could be revealed that electrical properties are influenced by the substrate temperatures of BST thin films and are enhanced by the seed-layer.

Simulation Study of Front-Lit Versus Back-Lit Si Solar Cells

  • Choe, Kwang Su
    • Korean Journal of Materials Research
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    • 제28권1호
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    • pp.38-42
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    • 2018
  • Continuous efforts are being made to improve the efficiency of Si solar cells, which is the prevailing technology at this time. As opposed to the standard front-lit solar cell design, the back-lit design suffers no shading loss because all the metal electrodes are placed on one side close to the pn junction, which is referred to as the front side, and the incoming light enters the denuded back side. In this study, a systematic comparison between the two designs was conducted by means of computer simulation. Medici, a two-dimensional semiconductor device simulation tool, was utilized for this purpose. The $0.6{\mu}m$ wavelength, the peak value for the AM-1.5 illumination, was chosen for the incident photons, and the minority-carrier recombination lifetime (${\tau}$), a key indicator of the Si substrate quality, was the main variable in the simulation on a p-type $150{\mu}m$ thick Si substrate. Qualitatively, minority-carrier recombination affected the short circuit current (Isc) but not the opencircuit voltage (Voc). The latter was most affected by series resistance associated with the electrode locations. Quantitatively, when ${\tau}{\leq}500{\mu}s$, the simulation yielded the solar cell power outputs of $20.7mW{\cdot}cm^{-2}$ and $18.6mW{\cdot}cm^{-2}$, respectively, for the front-lit and back-lit cells, a reasonable 10 % difference. However, when ${\tau}$ < $500{\mu}s$, the difference was 20 % or more, making the back-lit design less than competitive. We concluded that the back-lit design, despite its inherent benefits, is not suitable for a broad range of Si solar cells but may only be applicable in the high-end cells where float-zone (FZ) or magnetic Czochralski (MCZ) Si crystals of the highest quality are used as the substrate.