• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.669-676
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• 1995

In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

• Journal of the Korean Society for Marine Environment & Energy
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• v.12 no.2
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• pp.91-95
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• 2009

To understand the effect of attachment substrate on the growth of benthic microalgae, we experimentally investigated the growth of benthic microalgae Nitzschia sp. (Jinhae Bay strain) with additions of glass beads in different sizes. The glass beads used in this study are 0.09-0.15 mm (G1), 0.25-0.50 mm (G2), 0.75-1.00 mm (G3) and 1.25-1.65 mm (G4). No addition of glass beads used as controls. Highest specific growth rate (0.37/day) and maximum cell density ($9,232{\pm}840$ cells/mL) of Nitzschia sp. showed at the smallest glass beads (G1), and the specific growth rate and maximum cell density were decreasing with increasing size of glass beads (specific growth rate and maximum cell density of G4 was 0.24/day and $6,397{\pm}524$ cells/mL, respectively). Moreover, specific growth rate of the control experiment (0.23/day) was significantly lower than their of G1 to G3 experiment. The results indicated that the attachment substrate for benthic microalgae as Nitzschia sp. is important factor which affecting the growth rate as well as cell density. Therefore, the physiological experiment of benthic microalgae seems to be necessary to preliminary experiment, which is addition or not of the attachment suitable substrate and the grain size for the target species of benthic microalgae.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1049-1055
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• 2007

Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.433-438
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• 2006

In order to examine the working condition of melts in tin bath of float process it was investigated Sn diffusion behavior and solidification rate of melts for alkali-alkaline earth-silica PDP substrate glasses such as commercial CaO rich CS-77 glass, commercial $Al_2O_3$ rich PD-200 glass and self developed $SiO_2$ rich T-series (T-2, T-4, T-6) glasses. In the case of Sn depth and concentration created in glass surface by ion exchange between Sn and alkali, T-series showed lower value than CS-77, especially T-2 is more excellent than PD-200. The solidification rate of melts expressed by cooling time between $log{\eta}=4\;and\;7.6dPa{\cdot}s$ was low for T-series comparing with CS-77 and PD-200. Therefore, it was concluded that T-series is desirable considering forming condition in the tin bath of the float process.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.65-69
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• 2007

For self-developed alkali-alkaline earth-silicate and commercial glass melts for plasma display panel substrate, the corrosion behavior of fused casting refractory consisting of $Al_2O_3-ZrO_2-SiO_2$ was examined at the temperature corresponding to $10^2\;dPa{\cdot}s$ of melt viscosity by static finger methode. The corroded refractory specimens showed a typical concave shape due to interfacial convection of melts at their flux line. However, the corrosion thickness by commercial glass melts was $6\sim10$ times comparing to that by the self?developed melts. From the view point of the glass composition and the role of alkaline earth in glass network, it was discussed the effect of alkali/alkaline earth diffusion and temperature on the refractory corrosion.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.293-298
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• 2006

For substrate glass applied to PDP (Plasma Display Panel), it has been developed many glass compositions that have to not only meet the specifications of PDP but also satisfy the float process as production technology. In the present work several compositions with no deformation at PDP processing temperature and thermal expansion coefficient of $83{\sim}9{\times}10^{-7}/K$ were designed. Based on viscosity at high temperature and liquidus temperature for those compositions, three candidate compositions named T-2, T-4, T-6 were selected finally. It was examined additionally that thermal shrinkage at PDP processing temperature and visible transmittance. The properties of T-series were compared with those of commercial glasses and discussed from the view point of PDP device and glass production.

• Journal of IKEEE
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• v.23 no.2
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• pp.534-537
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• 2019

The optical loss is caused by reflection on the surface of the solar cell, without being absorbed inside the solar cell. Research is actively being conducted to reduce optical loss due to such reflection of light and to improve conversion efficiency of solar cells. In this paper, the surface of the FTO glass substrate was wet etched, and the structural characteristics of the tough surface were evaluated. In addition, optical properties on the surface were analyzed, etched using spectrometer. When light was introduced to a rough surface formed by etching, it was confirmed that the multiple reflections reduced the amount of light reflection from the surface, thereby increaseing the amount of light penetrating the glass substrate.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.327-331
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• 2008

An in-line wet etch/cleaning system was established for the research and development in wet etch process as a formation of electrode such as metal or transparent conductive oxide layer. A reverse moving system was equipped in the in-line wet etch/cleaning system for the alternating motion of glass substrate in a wet etch bath of the system. Therefore, it was possible for the glass substrate to be moved back and forth and it was possible to reduce the size of the system by using the reversing moving system. For the effect of the alternating motion of substrate on the etch rate in the in-line wet etch bath, indium tin oxide(ITO) patterns were obtained through wet etch process in the in-line system in which the substrate was moved back and forth. From the CD(critical dimension) skews resulted from the ADI CD and ACI CD of the ITO patterns, it was concluded that the alternating motion of glass substrate are possible to be applied to the mass production of wet etch process.