• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.583-588
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• 2005

Indium tin oxide (ITO) is a commonly used conducting transparent oxide film (CTO) used in flat panel display applications. Direct write laser ablation is sometimes employed for ITO patterning and it is important that the substrate material and remaining ITO be affected as little as possible by the laser ablation. In this investigation, femtosecond laser ablation of ITO was studied to identify laser processing parameters which cleanly ablated ITO with a minimum of damage to a glass substrate and surrounding ITO. The Ti:Sapphire chirp pulse amplified femtosecond laser used for the experiments had a wavelength of 775nm and produced pulses with a duration of 150fs at a rate of 2 kHz. Ablation was carried out at a sufficiently high panel scanning speed that single ablation spots could be studied. The pulse energy was adjusted to determine feasible spot diameters and depths which could be ablated into the ITO without damaging the glass substrate. Next, ablation of lines without glass damage was also demonstrated. Experiments were also performed with a high repetition rate (100kHz) femtosecond laser.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.1
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• pp.33-36
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• 2018

The purpose of this study is to improve the efficiency of anti-pollution film for PV module. The anti-pollution coating process was performed on a glass substrate, which is the same material as the glass substrate for the PV module. We coated the anti-pollution film on the glass substrate by spray coating. After coating process, annealing process was performed during 1 hour at $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$. And then we analyzed the surface characteristics according to the annealing temperature of the film. Annealing process can also improve the durability of the coated film. And then we analyzed the anti-pollution characteristics, particle size of anti-pollution film, light transmittance. The particle size of anti-pollution film was analyzed with FE-SEM. The light transmittance was analyzed with UV-Visible spectroscopy including integrating sphere.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.317-320
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.290-296
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• 2011

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as a resistive gas sensors for the $H_2$ gas detection. Sensor films were fabricated by the air spray method using the multi-walled CNTs dispersion solution on the glass substrates cured with plasma and nitrocellulose. Sensors were characterized by the resistance measurements in the self-fabricated oven in order to find the optimum detection properties for the hydrogen gas molecular. The sensitivity and the linearity of the MWVNT sensors using the glass substrate cured with plasma for the $H_2$ gas concentration of 0.06~0.6 ppm are 0.013~0.097%/sec and 0.131~0.959%FS, respectively. The MWCNT film was excellent in the response for the hydrogen gas moleculars and its reaction speed was very fast, which could be using as hydrogen gas sensor. The resistance of the fabricated sensors decreases when the sensors are exposed to $H_2$ gas.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.4-8
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• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.106-109
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• 2005

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with in-situ photoalignment method on polyimide (PI) surfaces using polymer films. Especially, we studied in-situ photoalignment changing heating temperature from $50^{\circ}C\;to\;120^{\circ}C$ on the polymer film. The LC aligning capabilities and pretilt angle on the polymer substrates were better than those on the glass substrate using in-situ photoalignment method. It is considered that this increase in pretilt angle may be attributed to the roughness of the micro-groove substrate induced by the in-situ photoalignment. As temperature of heated subtrate and UV exposure time increase, pretilt angle of the cell used polymer film increased. It is considered that the heating temperature of substrate is attributed to generate pretilt angle. Also, electro-optical performances of the in-situ photoaligned TN cell using the polymer substrate are almost the same as that of the TN cell using the glass substrate.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1440-1441
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• 2006

In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.354.1-354.1
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• 2016

Nanoporous gold (NPG) is a very promising material in various fields such as sensor, actuator, and catalysis because of its high surface to volume ratio and conducting nature. In this study, we fabricated a NPG based amperometric sensor on a glass substrate by means of co-sputtering of Au and Si. During the sputtering process, we found the optimum conditions for heat treatment to reduce the residual stress and to improve adhesion between NPG films and the glass substrate. Subsequently, Si was selectively etched from Au-Si alloy by KOH solution, which forms nanoporous structures. Scanning electron microscopy (SEM) and auger electron spectroscopy (AES) were used to estimate the structure of NPG films and their composition. By employing appropriate heat treatments, we could make very stable NPG films. We tested the performance of NPG sensor with aniline molecules, which shows high sensitivity for sensing low concentration of aniline.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.583-589
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• 1999

In the fabrication of ceramic chip couples for high frequency application such as the mobile communication equipment the formation of electrode lines and Ag diffusion were investigated with heat treatment conditions for removing organic binders. The deformation and densification of the electrode line greatly depended on the binder burnout process due to the overlapped temperature zone near 400$^{\circ}C$ of the binder dissociation and the solid phase sintering of the silver electrode. Ag ions were diffused into the glass ceramic substrate. The Ag diffusion was led by the glassy phase containing Pb ions rather than by the crystalline phase containing Ca ions. The fact suggests that the Ag diffusion could be controlled by managing the composition of the glass ceramic substrate.