• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.35-39
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• 2010

Interfacial stress singularity induced in an analysis model consisting of the polymeric thin film and the elastic substrate has been investigated using the boundary element method. The interfacial singular stresses between the viscoelastic thin film and the elastic substrate subjected to a uniform moisture ingression are investigated for the case of a small interfacial edge crack. It is assumed that moisture effects are assumed to be analogous to thermal effects. Then, the overall stress intensity factor for the case of a small interfacial edge crack is computed. The numerical procedure does not permit calculation of the limiting case for which the edge crack length vanishes.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.337-350
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• 1999

Thick diamond film having ~700${\mu}{\textrm}{m}$ thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4kW) microwave plasma enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconductivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• 한국결정성장학회지
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• 제9권4호
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• pp.441-445
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• 1999

Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.19-19
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• 2007

• Current Photovoltaic Research
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• 제1권2호
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.985-987
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• 2004

A plastic substrate for flexible display is developed. The gas barrier property in the substrate is improved through depositing metal and metal oxide multi layer on plastic film by PVD process. The metal/metal-oxide multiplayer on plastic film shows excellent gas barrier property and optical property.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.49-54
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• 1998

The growth of diamond films in plasma enhanced chemical vapor deposition(PECVD) processes requires high substrate temperatures and gas pressures, as well as high-power excitation of the gas source. Thus determining the substrate temperature in this severe environment is a challenge. The issue is a critical one since substrate temperature is a key parameter for understanding and optimizing diamond film growth. The precise Si substrate temperature calibration based on rapid-scanning spectroscopic ellipsometry have been developed and utilized. Using the true temperature of the top 200 ${\AA}$ of the Si substrate under diamond growth conditions, real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystallind thin films prepared by PECVD. RTSE shows that a significant volume fraction of nondiamond(or{{{{ {sp }^{2 } -bonded}}}}) carbon forms during thin film coalescence and is trapped near the substrate interface between ∼300 ${\AA}$ diamond nuclei.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.634-639
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• 2002

Using laser ablation technique carbon thin films were deposited on Si(100) substrate as a function of substrate temperature. In this study, the surface morphologic, structural and field emission properties of these carbon thin films were investigated using Raman spectroscopy, scanning electron microscopy, and a diode technique, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover, the intensity of D-band and the full width at half maximum of these bands were dependent on substrate temperatures. As the substrate temperature was increased, the field emission properties were improved. As the result, we find that the field emission properties of the films were changed significantly with the substrate temperature and structural features of carbon than films.

• 한국세라믹학회지
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• 제31권4호
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• pp.457-463
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• 1994

The growth condition of highly oriented textured diamond film on a (100) Si substrate was investigated as a function of texture orientation. The growth process consisted of biased enhanced nucleation (BEN) and texture growth. The substrate was under the plasma of 6% CH4-94% H2 with negative bias of 200V during the BEN which grounded during the texture growth. The texture orintation changed from <100> to <110> by increasing substrate temperature. The nearly perfect match between textured diamond grains and the Si substrate could be obtained under the condition of <100> texture. The degree of tilt mismatch increased with the increase of deviation of texture orientation from <100>. The degree of twist mismatch appeared to increase abruptly beyond the critical deviation of texture orientation from <100> because the nuclei having the same orientation as the substrate were no more preferred grains for texture formation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.218.2-218.2
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• 2013

In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.