• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.995-997
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• 2005

A plastic substrate for flexible display is developed. The gas barrier and optical properties of the substrate is improved through depositing silicon oxide/nitride layer and coating polymer layer on plastic film by sputtering process and wet coating process. Roll to roll processes will guarantee the productivity in the whole production process of the plastic substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.389.2-389.2
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• 2014

Polydimethylsiloxane (PDMS) based electronic devices are widely used for various applications in large area electronics, biomedical wearable interfaces and implantable circuitry where flexibility and/or stretchability are required. A few fabrication methods of electronic devices directly on PDMS substrate have been reported. However, it is well known that micro-cracks appear in the metal layer and in the lithography pattern on a PDMS substrate. To solve the above problems, a few studies for fabrication of stiff platform on PDMS substrate have been reported. Thin-film islands of a stiff region are fabricated on an elastomeric substrate, and electronic devices are fabricated on these stiff islands. When the substrate is stretched, the deformation is mainly accommodated by the substrate, and the stiff islands and electronic devices experience relatively small strains. Here, we report a new method to achieve stiff islands structures on an elastomeric substrate at a various thickness, as the platform for stretchable electronic devices. The stiff islands were defined by conventional photolithography on a stress-free elastomeric substrate. This technique can provide a practical strategy for realizing large-area stretchable electronic circuits, for various applications such as stretchable display or wearable electronic systems.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1406-1408
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• 2006

Plastic substrate for flexible TFT LCD is developed. The gas barrier, optical properties and conductivity in the substrate is improved through depositing silicon oxide/nitride layer and ITO layer, coating polymer layer on plastic film by sputtering process and wet coating process. The whole production process of the plastic substrate is guaranteed the productivity by using roll to roll process.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.985-987
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• 2004

A plastic substrate for flexible display is developed. The gas barrier property in the substrate is improved through depositing metal and metal oxide multi layer on plastic film by PVD process. The metal/metal-oxide multiplayer on plastic film shows excellent gas barrier property and optical property.

• ETRI Journal
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• v.34 no.6
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• pp.970-973
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• 2012

In this letter, we report on the development progress of a pressure control organic vapor deposition (PCOVD) technology used to design and build a large area deposition system. We also investigate the growth characteristics of a pentacene thin film by PCOVD. Using the PCOVD method, the mobility and on/off current ratio of an organic thin-film transistor (OTFT) on a plastic substrate are $0.1cm^2/Vs$ and $10^6$, respectively. The developed OTFT can be applied to a flexible display on a plastic substrate.

• Journal of Microbiology
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• v.35 no.3
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• pp.193-199
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• 1997

From several industrial wastewaters, 14 bacterial strains which degrade benzene, toluene, o-xylene, m-xylene, or p-xylene (BTX) were obtained. These strains were characterized as to their species composition and the substrate range, kinetic parameters and the substrate interactions were investigated. Although BTX components have a similar chemical structure, isolated strains showed different substrate ranges and kinetic parameters. None of the strains could degrade all of BTX components and most of them showed an inhibition (Haldane) kinetics on BTX, BTX mixtures were removed under inhibitory substrate interactions with variation in the intensity of inhibition. For a complete degradation of BTX, a defined mixed culture containing three different types of patyways was constructed and all of the BTX components were simultaneously degraded with the totla removal rate of 225.69 mg/g biomass/h Judging from the results, the obtained mixed culture seems to be useful for the treatment of BTX-contaminated wastewater or groundwater as well as for the removal of BTX from the contaminated air stream.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

• ETRI Journal
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• v.41 no.6
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• pp.811-819
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• 2019

We propose a substrate with high thermal conductivity, manufactured by the low-temperature co-fired ceramic (LTCC) multilayer circuit process technology, as a new DC/DC converter platform for power electronics applications. We compare the reliability and power conversion efficiency of a converter using the LTCC substrate with the one using a conventional printed circuit board (PCB) substrate, to demonstrate the superior characteristics of the LTCC substrates. The power conversion efficiencies of the LTCC- and PCB-based synchronous buck converters are 95.5% and 94.5%, respectively, while those of nonsynchronous buck converters are 92.5% and 91.3%, respectively, at an output power of 100 W. To verify the reliability of the LTCC-based converter, two types of tests were conducted. Storage temperature tests were conducted at -20 ℃ and 85 ℃ for 100 h each. The variation in efficiency after the tests was less than 0.3%. A working temperature test was conducted for 60 min, and the temperature of the converter was saturated at 58.2 ℃ without a decrease in efficiency. These results demonstrate the applicability of LTCC as a substrate for power conversion systems.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.617-619
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• 2008

Inorganic-organic hybrid multilayers were formed on the plastic substrate to enhance the barrier properties of substrate to water vapor and oxygen transport. Plasma pretreatment of substrate with $Ar/O_2$ lead to adhesion improvement and the densification of inorganic layer on the substrates. Combination of $SiO_xN_y$ layer and silanenanoclay composite layer offered quite good barrier properties (WVTR and OTR) to PES substrate.

• ETRI Journal
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• v.43 no.5
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• pp.909-915
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• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.