• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.33-38
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• 2013

In this study, both a finite element analysis and an experimental analysis are executed to investigate the mechanical characteristics of dielectric material effects on warpage. Also, viscoelastic material properties are measured by DMA and are considered in warpage simulation. A finite element analysis is done by using both thermal elastic analysis and a thermo-viscoelastic analysis to predict the nonlinear effects. For experimental study, specimens warpage of non-symmetric structure with body size of $22.5{\times}22.5$ mm, $37.5{\times}37.5$ mm and $42.5{\times}42.5$ mm are measured under the reflow temperature condition. From the analysis results, experimental warpage is not similar to FEA results using thermal elastic analysis but similar to FEA results using thermo-viscoelastic analysis. Also, its effect on substrate warpage is increased as core thickness is decreased and body size is getting larger. These FEA and the experimental results show that the nonlinear characteristics of dielectric material play an important role on substrate warpage. Therefore, it is strongly recommended that non-linear behavior characteristics of a dielectric material should be considered to control warpage of FCBGA substrate under conditions of geometry, structure and manufacturing process and so on.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.29-33
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• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

• 대한전자공학회논문지TC
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• 제48권5호
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• pp.46-53
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• 2011

유한한 기판크기가 E-평면으로 배열된 선형 위상 배열 안테나의 방사 특성에 미치는 영향을 연구하였다. 여러 가지 기판 크기에 따른 active reflection coefficient 와 average active element pattern 으로부터 선형 배열안테나의 방사특성을 예측하였다. E-평면과 만나는 기판 가장자리까지의 거리 변화가 H-평면과 만나는 기판 가장자리까지의 거리 변화에 비해 위상 배열 안테나의 방사 패턴 특성에 미치는 영향이 큰 것을 알 수 있었다.

• 한국진공학회지
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• 제18권5호
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• pp.337-345
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• 2009

패키지 기판의 지름 $100{\mu}m$ 이하 미세 드릴 구멍의 경우 습식 디스미어 공정만으로는 구멍 내부의 스미어를 효과적으로 제거할 수 없다. 본 연구에서는 습식 디스미어 공정의 이전 단계에서 대기압 플라즈마를 처리하여 소수성의 기판 표면을 친수성으로 개질하고자 하였다. 대기압 플라즈마 공정은 리모트 DBD 방식의 전극을 이용하여 패키지 제조 공정에 적합한 인라인 형태의 장비로 구성되었다. 대기압 플라즈마를 처리한 결과 접촉각 기준으로 $71^{\circ}$의 소수성 절연 필름 표면이 $30^{\circ}$ 정도의 친수성 표면으로 개질되었다. 대기압 플라즈마 처리 유무에 따른 습식 디스미어 공정의 특성을 평가하기 위하여 절연 필름의 두께, 드릴 구멍 지름, 표면 조도의 변화를 측정하였는데, 대기압 플라즈마 처리 시 기판 전면에서 공정 특성의 균일도가 향상되는 것을 확인하였다. 또한 대기압 플라즈마 처리 유무에 따른 드릴 구멍의 SEM 사진 분석 결과 대기압 플라즈마 처리 시 구멍 내부의 스미어가 효과적으로 제거됨을 실험적으로 확인하였다.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1049-1055
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• 2007

Lots of integration work has been done in order to miniaturize the devices for communication. To do this work, one of key work is to get miniaturized inductor with high Q factor for RF circuitry. However, it is not easy to get high Q inductor with silicon based substrate in the range of GHz. Although silicon is well known for its good electrical and mechanical characteristics, silicon has many losses due to small resistivity and high permittivity in the range of high frequency. MEMS technology is a key technology to fabricate miniaturized devices and LTCC is one of good substrate materials in the range of high frequency due to its characteristics of high resistivity and low permittivity. Therefore, we proposed and studied to fabricate and analyze the inductor on the LTCC substrate with MEMS fabrication technology as the one of solutions to overcome this problem. We succeeded in fabricating and characterizing the high Q inductor on the LTCC substrate and then compared and analyzed the results of this inductor with that on a silicon and a glass substrate. The inductor on the LTCC substrate has larger Q factor value and inductance value than that on a silicon and a glass substrate. The values of Q factor with the LTCC substrate are 12 at 3 GHz, 33 at 6 GHz, 51 at 7 GHz and the values of inductance is 1.8, 1.5, 0.6 nH in the range of 5 GHz on the silicon, glass, and LTCC substrate, respectively.

• 한국표면공학회지
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• 제28권3호
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• pp.133-141
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• 1995

The deposition characteristics of diamond films were investigated for three different substrates : Si, Inconel 600 and steel. Diamond films were prepared by microwave plasma CVD method using $CH_4$, $H_2$ and $O_2$ as reaction gases. The deposited films were analyzed with SEM, Raman spectroscopy and ellipsometer. For Si substrate, diamond films were successfully obtained for most of the deposition conditions used in this study. As the $CH_4$ flow rate decreased and the $O_2$ flow rate increased, the quality of the film was improved due to the reduced non-diamond phase in the film. For Inconel 600 substrate, the surface pretreatment with diamond powders was required to deposit a continuous diamond film. The films deposited at temperatures of $600^{\circ}C$ and $700^{\circ}C$ had mainly diamond phase, but they were peeled off locally due to the difference in the thermal expansion coefficient between the substrate and the deposited films. The films deposited at $500^{\circ}C$ and $850^{\circ}C$ had only the graphitic carbon phase. For steel substrate, all of the films deposited had only the graphitie carbon phase. We speculated that the formation of diamond nuclei on the steel substrate was inhibited due to the diffusion of carbon atoms into the steel substrate which has a large amount of carbon solubility.

• 한국전자파학회논문지
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• 제24권5호
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• pp.508-514
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• 2013

기판 집적 도파관(SIW: Substrate Integrated Waveguide)는 양면 도체 기판과 도체 비아를 사용하여 매우 얇은 구형 도파관을 형성하는 것으로 사용되는 도체 모두가 직류적으로 하나로 연결되어 있어서 직류 전원 공급이 불가능하다. 본 논문에서는 직류 전원 공급이 가능한 folded corrugated substrate integrated waveguide(FCSIW)를 제안한다. 제안된 FCSIW는 SIW에 사용되는 전도성 비아를 구부러진 형태의 개방형 스터브로 대체하여 직류 전원 공급이 가능하다. 이 FCSIW는 기존의 직류 전원 공급이 가능한 corrugated substrate integrated waveguide (CSIW)에서 나타나는 누설파 발생이 없어서 광대역 전송 특성이 우수하고, CSIW에 비하여 전송선의 단면 폭을 30 % 줄일 수 있다. 9~15 GHz 대역에서 측정된 154 mm 길이의 FCSIW의 평균 삽입 손실(1.49 dB)이 CSIW의 값(3.08 dB)에 비하여 매우 우수함을 확인하였으며, 상호 간섭 측정으로부터 누설파가 발생되지 않음을 확인하였다.

• 전기학회논문지
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• 제59권1호
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• pp.113-115
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• 2010

In this study, ZnO films have been grown on PES(polyethersu]fone) substrate by PLD(pulsed laser deposition) and characterized as a change of laser density and substrate temperature. Growing conditions were changed with substrate temperatures ranging from 50 to $200^{\circ}C$ and laser densities ranging from $0.2\sim0.4 J/cm^2$. Optical and structural properties were measured by XRD, SEM, AFM, PL measurement.

• 대한전자공학회논문지
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• 제27권6호
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• pp.895-900
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• 1990

With the MOS device scailing down, the substrate concentration must increase in order to avoid punchthrough leakage current due to the DIBL(Drain Induced Barrier Lowering) effect. However the enhancement of the substrate concentration increases source, drain juntion capacitances and substrate current due to hot elelctron, degrading the speed characteristics and reliability of the MOS devices. In this paper, a new device, called CODE(Channel Only Dopant Enhancement) MOS, an its fabrication are proposed. By comparing the fabricated CODE MOSFET with the conventional device, the improvements on DIBL, substrate current and source, drain juntion capacitances are realized.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2006년도 춘계 학술대회 개요집
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• pp.13-15
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• 2006

The effects of plasma treatment on the surfaces of the FR-4 (Flame Resistant-4) and copper substrates are investigated in terms of X-ray photoelectron spectroscopy (XPS), contact angle, and atomic force microscopy (AFM). The adhesion strengths of the underfills/FR-4 substrate and underfills/copper substrate are also studied. As experimental results, the plasma treatments of FR-4 and copper substrate surfaces yield several oxygen complexes in hydrophilic surfaces, which can play an important role in increasing the surface polarity, wettability, and adhesion characteristics of the underfills/substrates.