• Title/Summary/Keyword: Strontium Barium Niobate (SBN)

Search Result 6, Processing Time 0.019 seconds

Sr/Ba Ratio Dependence of Dielectric Characteristics in Strontium Barium NiobateCeramics (Sr/Ba 비에 따른 Strontium Barium Niobate 세라믹스의 유전특성)

  • 김명섭;이준형;김정주;이희영;조상희
    • Journal of the Korean Ceramic Society
    • /
    • v.38 no.12
    • /
    • pp.1167-1173
    • /
    • 2001
  • The tetragonal tungsten bronze type of Sr$_{x}Ba_{1-x}Nb_{2}O_{6}$(SBN) (0.3$\le$x$\ge$0.7) ceramics was synthesized by the solid state reaction method, and the dielectric properties of SBN ceramics as a function of Sr/Ba ratio were examined. With increasing Sr/Ba ratio in SBN ceramics, the Curie temperature decreased and the maximum dielectric constant at the Curie temperature increased. The relaxor behavior of the SBN ceramics as a function of Sr/Ba ratio was quantitatively evaluated. More relaxor behavior of dielectric characteristics was observed as the ratio of Sr/Ba increased. The experimental results are explained with a viewpoint of crystallography of tungsten bronze structured SBN ceramics.

  • PDF

The dependent of growth temperature of piezoelectric SBN Thin Film by Metal Organic Decomposition Process and their properties (MOD 법에 의한 압전 SBN 박막의 성장 온도 의존성 및 특성)

  • Kim, Kwang-Sik;Jang, Gun-Ik;Ur, Soon-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.06a
    • /
    • pp.382-383
    • /
    • 2006
  • The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150~200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400{\sim}800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding. average grain size about 500~1000 nm influenced by annealing temperature. The piezoelectric properties of prepared SBN thin film, the remanent polarization value(2Pr) and coercive field was $1.2{\mu}C/cm^2$ and 2.15V/cm, respectively.

  • PDF

The study on preparation of $Sr_xBa_{1-x}$ $Nb_2O_6$ piezoelectric Thin Film of tungsten-bronze type by Metal Organic Decomposition Process and their properties (MOD 공법을 이용한 텅스텐 브론즈구조의 $Sr_x Ba_{1-x}$ $Nb_2O_6$ 압전 박막의 제조 및 특성 연구)

  • Kim, Kwang-Sik;Kim, Kyoung-Won;Jang, Gun-Ik;Ur, Soon-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.11a
    • /
    • pp.248-249
    • /
    • 2005
  • The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

  • PDF

Oxidation/Reduction Effect on Dielectric Properties of Sr1-xBaxNb2O6 (Sr1-xBaxNb2O6의 유전 특성에 대한 산화/환원 열처리의 영향)

  • Kang, Bong-Hoon;Paek, Young-Sop;Joo, Gi-Tae
    • Journal of the Korean Ceramic Society
    • /
    • v.43 no.3 s.286
    • /
    • pp.173-176
    • /
    • 2006
  • ${Sr_{1-x}Ba_xNb_2O_6$(SBN) have been obtained in Pt crucible by melting and cooling in air atmosphere. Some SBNs being at the bottom of the crucible are black and transparent, and the other SBNs colorless. The black SBN became to be colorless by oxidation heat treatment $1,300^{\circ}C$ for 4 h, Curie temperature is changed by colorless change of black SBN. The reason seems to be $Nb^{5+}$ oxidation of some $Nb^{4+}$ ions in SBN or effect of unknown impurities. Diffused Phase Transition (DPT) was appeared during heating and cooling process. Various sintered SBN ceramics specimen showed relaxor characteristics.

Characteristics of SBN Thin Films Prepared by Sol-Gel Process (졸겔법으로 제조된 SBN박막의 특성연구)

  • 이동근;김태중;이해욱;이희영;김정주;조상희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.07a
    • /
    • pp.1030-1035
    • /
    • 2001
  • Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

  • PDF

Effect of Poling Electric Field and Temperature Change on the Dielectric Anomalies of Relaxor Ferroelectric Strontium-Barium-Niobate Single Crystals

  • Shabbir, Ghulam;Ko, Jae-Hyeon;Kojima, Seiji
    • Journal of the Korean Physical Society
    • /
    • v.73 no.10
    • /
    • pp.1561-1565
    • /
    • 2018
  • The dielectric properties of the uniaxial relaxor ferroelectric $Sr_xBa_{1-x}Nb_2O_6$ with x = 0.75 were investigated along the polar [001] direction as a function of temperature. The capacitance maximum showed the frequency dispersion commonly observed in relaxors. Additional weak dielectric anomalies were observed in the paraelectric phase; they were only seen during the heating process and disappeared upon subsequent cooling. These were attributed to the existence of large polar clusters strongly pinned at defects and/or to random fields and their metastable characters. Aligning the ferroelectric domains along the polar axis at room temperature removed the high-temperature dielectric anomalies. The dependences of the capacitance and the dielectric maximum temperature on the magnitude of the poling field were investigated.