• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

• Journal of Radiation Protection and Research
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• 제35권3호
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• pp.124-134
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• 2010

Geant4 전산모사 toolkit은 버전에 따라 개선되거나 새로워진 물리적 모델을 제공한다. 최근 재 코드화 된 Geant4.9.3은 저 에너지 전자기 물리 모델에 대해 Livermore 데이터 삽입과 새로운 물리적 모델을 적용시키고, 코드를 수정하여 물리적 요소를 개선시켰다. 본 연구에서는 향후, 전자 또는 입자를 이용한 신뢰성 있는 전산모사를 위하여 Geant4.9.2와 9.3에 포함된 전자기 물리모델을 이용하여 물질 내부를 통과하는 입자의 저지능(Stopping power)과 CSDA(Continuously Slowing Down Approximation) range 데이터를 획득하였으며, 이 결과를 미국국립기술표준원(National Institute of Standards and Technology, NIST)에서 제공하는 각각의 데이터와 비교하여, Geant4.9.2에 대한 Geant4.9.3의 저 에너지 전자기 물리 모델의 개선 여부를 알아보고자 하였다.

• 한국의학물리학회지:의학물리
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• 제23권4호
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• pp.285-291
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• 2012

Si(Li) 검출기를 이용해 한국표준과학연구원에서 보유한 베타선 선원인 $^{147}Pm$, $^{85}Kr$, $^{90}Sr+^{90}Y$ 선원의 순수 베타선 에너지 스펙트럼을 측정하였고 이 측정 스펙트럼에 대한 잔여에너지와 질량충돌저지능비를 산출하였다. 베타선의 잔여에너지는 $^{147}Pm$, $^{85}Kr$, $^{90}Sr+^{90}Y$ 선원에 대하여 각각 0.14, 0.57, 0.93 MeV으로 평가되었고 질량충돌저지능비는 각각 1.123, 1.120, 1.109이었다.

• 한국의학물리학회지:의학물리
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• 제32권4호
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• pp.165-171
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• 2021

Purpose: This study aimed to evaluate the effect of collimator width on effective atomic number (EAN), relative electron density (RED), and stopping power ratio (SPR) measured by dual-layer dual-energy computed tomography (DL-DECT). Methods: CIRS electron density calibration phantoms with two different arrangements of material plugs were scanned by DL-DECT with two different collimator widths. The first phantom included two dense bone plugs, while the second excluded dense bone plugs. The collimator widths selected were 64 mm×0.625 mm for wider collimators and 16 mm×0.625 mm for narrow collimators. The scanning parameters were 120 kVp, 0.33 second gantry rotation, 3 mm slice thickness, B reconstruction filter, and spectral level 4. An image analysis portal system provided by a computed tomography (CT) manufacturer was used to derive the EAN and RED of the phantoms from the combination of low energy and high energy CT images. The EAN and RED were compared between the images scanned using the two different collimation widths. Results: The CT images with the wider collimation width generated more severe artifacts, particularly with high-density material (i.e., dense bone). RED and EAN for tissues (excluding lung and bones) with the wider collimation width showed significant relative differences compared to the theoretical value (4.5% for RED and 20.6% for EAN), while those with the narrow collimation width were closer to the theoretical value of each material (2.2% for EAN and 2.3% for RED). Scanning with narrow collimation width increased the accuracy of SPR estimation even with high-density bone plugs in the phantom. Conclusions: The effect of CT collimation width on EAN, RED, and SPR measured by DL-DECT was evaluated. In order to improve the accuracy of the measured EAN, RED, and SPR by DL-DECT, CT scanning should be performed using narrow collimation widths.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제7회 학술발표회 및 한·일 CVD 심포지움 논문개요집
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• pp.92-92
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• 1994

Relative intensities of photons emitted from tilted carbon foils have been measured in the wavelength region 300800 nm by 0,6-2,4 MeV $H^{+}\;and\;He^{+}$ ion impacts, Ions were directed onto target surfaces at tilt angles with respect to the sllrface normal, Experimental results support the model that the observed continuum radiation is emitted from the exited carbon foil itself. At each incident projectile energy, the photon intensities of continuum spectra for tilted carbon foi Is were compatred to the stoppi ng powers of carbon for $H^{+}\;and\;He^{+}$ ions, It was found that the photon emission intensity for $H^{+}$ ion is linearly proportional to the stopping power, whereas that for $He^{+}$ ions is proportional to a higher power of the stopping power, and that this tendency increases wi th decreasing velocity of the projectiIes[1, 2].[1, 2].

• 대한기계학회논문집A
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• 제20권2호
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• pp.585-593
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• 1996

According to the considerable increase of the length of belt conveyors, the dynamic analysis of systme becomes necessary to consider the variation of tensions and transient motion of components during starting and stopping of conveyor. The mathematical model of system is derived using the lumped parameter method. The input driving force is represented with two functions of time and pulley speed to count the characteristics of motor and fluid coupling. An example system was studied with 14 km in the distance of carrying. At head, it has two drivers and one gravity take-up and at tail ond driver and one power winch take-up. In the example, the transient tensions and responses, calculated using two cases of driving force, are mutually compared in starting mode. Also, the position of maximum tension and the braking force of take-up are obtained in stopping mode.

• 한국방사선학회논문지
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• 제17권2호
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• pp.207-213
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• 2023

전산화단층촬영(computed tomography, CT) 영상은 양성자 브레그 피크 위치 추정 및 치료 계획 시뮬레이션의 기초로 사용된다. Hounsfield Unit(HU) 기반의 양성자 저지능비(stopping pwer ratio, SPR) 예측 과정에서 환자의 밀도와 원소 구성의 작은 차이로 양성자 빔의 경로를 따라 브레그 피크 위치의 불확실성이 발생한다. 본 연구에서는 브레그 피크 위치 예측 불확실성 감소를 위하여 이중에너지 전산화단층촬영 영상 기반의 양성자 저지능비 예측 정확도의 잠재력을 연구를 하였다. 양성자 빔의 저지능비를 추정하기 위해 전산화단층촬영 시스템(Somatom Definition AS, Siemens Health Care, Forchheim, Germany)을 이용하여 전자밀도팬텀(CIRS Model 062M electron density phantom, CIRS Inc., Norfolk, VA, USA)의 단일에너지 및 이중에너지 영상을 획득하였다. 이를 검증하기 위해 미국 국립 표준기술 연구소(National Institute of Standards and Technology, NIST)에서 제공하는 표준 데이터를 통하여 추정한 실제 저지능비와 비교하였다. 그 결과 잡음이 제거된 이중에너지 영상 기반 방법을 통한 양성자 빔의 저지능비 예측에서 정확도 개선 가능성을 확인할 수 있었으며, 인체의 다양한 밀도와 원소 구성을 가진 대체물을 더욱 다양하게 제작하여 저지능비를 예측 할 경우 더욱 향상된 양성자의 브레그 피크 위치 예측이 가능할 것으로 사료된다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2011년도 전력전자학술대회
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• pp.103-104
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• 2011

This paper suggests a new starting and stopping method appropriate for the sensorless PMSM drive with air bearings. The proposed method based on the sensorless control algorithm of PMSM uses additional d-axis current control to cope with the limitation of the adopted back-emf based sensorless algorithm in the low speed region. The experimental results show that the proposed method drives appropriately the PMSM with air bearings.

• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.389-396
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• 1994

The bilayer film of Ag/a-S $e_{75.G}$ $e_{25}$ and the monolayer film of a-S $e_{75.G}$ $e_{25}$ act as a negative-type and a positive-type resist in focused ion beam lithography, respectively. Using a model which takes into account the ion stopping power, the ion projected range, the ion concentration implanted into resists and the ion transmission coefficient, etc., the ion resist parameters are calculated for a broad range of ion energies and implanted doses. Ion sources of A $r^{+}$, S $i^{++}$ and G $a^{+}$ are used to expose resists. As the calculated results, the energy loss per unit distance by Ga'$^{+}$ ion is about 10$^{3}$[keV/.mu.M] and nearly constant for all energy range. Especially, the projected range and struggling for 80[keV] G $a^{+}$ ion energy are 0.0425[.mu.m] and 0.020[.mu.m], , respectively and the resist thickness of a-S $e_{75}$ G $e_{25}$ to minimize the ion penetration rate into a substrate is 0.118[.mu.m].u.m]..u.m].

• 전기학회논문지P
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• 제57권3호
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• pp.225-230
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• 2008

Reactor starting method has the advantage of simplicity and closed transition in spite of lower starting torque per kVA. This method allows a smooth start with almost no observable disturbance on transition and is suitable for applications such as centrifugal pumps or fans. Reactive power doesn't contribute to work but needs to sustain the electromagnetic field required for the induction motor to operate. Starting power factor of induction motor is specially lower than running power factor. Power factor application is needed to compensate for the lower power factor of induction motor. This power factor compensation systems is occasionally being hit by the effects of the starting reactor connection position at the starting, stopping of high-voltage induction motor. This paper describes voltage and current stress affected by the installation position of power factor compensation application at the reactor starting method.