• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• Korean Chemical Engineering Research
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• 제59권1호
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• pp.138-151
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• 2021

The effect of a reactant ratio on the growth of a buoyancy-driven instability in an irreversible A+B→C reaction system is analyzed theoretically and numerically. Taking a non-stoichiometric reactant ratio into account, new linear stability equations are derived without the quasi-steady state assumption (QSSA) and solved analytically. It is found that the main parameters to explain the present system are the Damköhler number, the dimensionless density difference of chemical species and the ratio of reactants. The present initial grow rate analysis without QSSA shows that the system is initially unconditionally stable regardless of the parameter values; however, the previous initial growth rate analysis based on the QSSA predicted the system is unstable if the system is physically unstable. For time evolving cases, the present growth rates obtained from the spectral analysis and pseudo-spectral method support each other, but quite differently from that obtained under the conventional QSSA. Adopting the result of the linear stability analysis as an initial condition, fully nonlinear direct numerical simulations are conducted. Both the linear analysis and the nonlinear simulation show that the reactant ratio plays an important role in the onset and the growth of the instability motion.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2005년도 제31회 KOSCO SYMPOSIUM 논문집
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• pp.328-336
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• 2005

Effects of surface defect distribution on flame instability during flame-surface interaction are experimentally investigated. To examine the chemical quenching phenomenon, we prepared thermally grown silicon oxide plates with well-defined defect density. Ion implantation was used to control the number of defects, i.e. oxygen vacancies. In an attempt to preferentially remove the oxygen atoms from silicon dioxide surface, argon ions with low energy level from 3keV to 5keV were irradiated at the incident angle of $60^{\circ}C$. Compositional and structural modification of $SiO_2$ induced by low-energy $Ar^+$ ion irradiation has been characterized by Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The analysis shows that as the ion energy increases, the number of structural defect also increases and non-stoichiometric condition of $SiO_x(x{\le}2)$ plates is enhanced. From the quenching distance measurements, we found out that when the surface temperature is under $300^{\circ}C$, the quenching distance decreases on account of reduced heat loss; as the surface temperature increases over $300^{\circ}C$, however, quenching distance increases despite reduced heat loss effect. Such aberrant behavior is caused by heterogeneous chemical reaction between active radicals and surface defect sites. The higher defect density, the larger quenching distance. This results means that chemical quenching is governed by radical adsorption and can be parameterized by the oxygen vacancy density on the surface.

• 대한기계학회논문집B
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• 제37권8호
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• pp.743-752
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• 2013

본 논문은 대형 상용기관을 모사한 정적연소실에서 매립지 가스의 연소 특성에 대한 복수의 논문 중 두 번째로, 연소압력 측정을 기반으로 연소과정을 해석하였다. 해석 결과 연소에 유리한 조건일수록 두 개의 압력 정점이 존재하며, 이는 연소에 의한 열발생과 열전달에 의한 냉각효과의 상호 작용이며 두 정점의 크기는 미연가스 분율에 따라 달라진다. 또한 연소과정 중 열발생에는 4개의 주요 변곡점이 발생하고, 이는 점화위치로부터 화염전파에 따른 전열 면적 변화과정이 주원인이며 연소에 불리한 조건일수록 변곡점은 증가하고 열발생은 복잡한 형태를 지니는데, 이는 연소기간 연장이 주원인이다. 결론적으로 점화위치와 관련된 화염전파 과정 및 전열 면적의 변화과정 그리고 대형 연소실에 의한 연소기간 연장의 효과가 상호 복잡하게 작용하면서 매우 특이한 형태의 열발생 곡선이 생성된다.

• 대한기계학회논문집
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• 제11권1호
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• pp.118-123
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• 1987

본 연구에서는 새로 고안된 연료주입기(air injector)바로 뒤에 입사압축파를 반사시키기 위한 벽을 설치하므로써 고체입자의 입사압축파에 대한 노출을 최대한 줄 였고 또한 새로운 연료주입기에 의해 매우 잘 분포된 입자분포를 얻을 수 있었다. 반사압축파에 의해 생성된 고온 고압의 산소중에서의 고체입자의 점화지연시간을 측정 하므로써 기체유동이 존재하는 입사압축파실험에서의 점화지연시간과 비교하여 기체유 동이 고체 미립자의 점화에 미치는 영향을 알아볼 수 있었고 반사압축파에 의한 점화 상태 조건하에서도 표면 점화모델이 성립하는지를 고찰해 보았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.398-398
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• 2013

The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.

• 청정기술
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• 제23권1호
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• pp.64-72
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• 2017

본 연구에서는, $150{\sim}400^{\circ}C$ 영역에서 $NO_x$를 제어하기 위한 ball mill 기법을 사용한 선택적 환원촉매(SCR)의 연구를 수행하였다. 제조된 촉매들의 구조적 특성 및 산화가 특성을 확인하기 위하여 XRD, BET, XPS 분석을 수행하였다. 다양한 ball mill 기법에 의해 제조된 촉매는 $250^{\circ}C$ 이하의 온도구간에서의 활성의 차이를 보였다. 이중 가장 우수한 탈질효율을 갖는 촉매를 기준으로, ball mill 시간이 3시간일 때 가장 높은 활성을 나타내었다. XPS 분석 결과, vanadium의 비 화학양론종의 존재 및 원자 수 증가가 활성증진에 유리하게 작용한 것으로 나타났다. 또한 $O_2$ on-off 실험을 통해 격자산소량의 양과 탈질 효율과의 상관관계를 나타내었고, 이는 서로 비례관계에 있음을 확인하였다.

• 상하수도학회지
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• 제27권6호
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• pp.771-778
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• 2013

Gas hydrate (GH) process is a new desalination technology, where GH is a non- stoichiometric crystalline inclusion compounds formed by water and a number of gas molecules. Seawater GH is produced in a low temperature and a high pressure condition and they are separated from the concentrated seawater. The drawback of the GH process so far is that salt contents contained in its product does not meet the fresh water quality standard. This means that the GH process is not a standalone process for seawater desalination and it needs the help of other desalting process like reverse osmosis (RO). The objective of this study is to investigate the effect of GH process on energy saving for RO process in seawater desalination. The GH product water quality data, which were obtained from a literature, were used as input data for RO process simulation. The simulation results show that the energy saving effect by the GH process is in a range of 68 % to 81 %, which increases as the salt removal efficiency of the GH process increases. Boron (B) and total dissolved solids (TDS) concentrations of the final product of the hybrid process of GH and RO were also investigated through the RO process simulation to find relavant salt rejection efficiency of the GH process. In conclusion, the salt rejection efficiency of the GH process should exceed at least 78% in order to meet the product water quality standards and to increase the energy saving effect.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• 분석과학
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• 제30권6호
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• pp.405-410
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• 2017

고 에너지 물질은 폭약이나 로켓의 추진체와 같은 군사적 목적뿐만 아니라 연료, 토목 및 건축 등의 민간 분야에도 사용되고 있다. 새로운 고에너지 물질의 개발을 위해 필수적인 단계는 물질의 폭발성능을 정확하게 계산하는 것이다. 여러 수식들 중에서 폭발 성능을 계산하는데 가장 대표적인 수식은 Kamlet-Jacobs (K-J) 식 이다. K-J 식에서는 폭발 시 기체 생성물의 몰수와 이들 기체의 평균 분자량, 그리고 폭발열 과 같은 인자가 폭발 성능에 크게 영향을 미치고, 이것들은 폭발반응에서 생성된 생성물 조성에 좌우되게 된다. 본 연구에서는 4가지 화학 양론적 규칙(Kamlet-Jacobs, Kistiakowsky-Wilson, modified Kistiakowsky-Wilson, Springall-Roberts 규칙)을 통해 65종 고에너지물질의 폭발 생성물 조성을 계산하였고, 이를 K-J, Rothstein, Xiong, Stine, Keshavarz등이 제안한 폭발속도식에 적용하였다. 각 계산된 방법별로 실험값에 대한 평균절대오차와 평균제곱근오차를 얻었다. 다소 복잡한 K-J와 Xiong식은 간단한 Keshavarz 식과 Rothstein식보다 더 낮은 평균절대오차를 나타내었다. 또한 mod-KW규칙으로 생성물을 계산하여 Xiong의 식에 적용하였을 때, 폭발속도들이 가장 정확했다. 이 연구는 고에너지물질의 정확한 성능을 얻기 위하여 폭발속도를 계산하는 다양한 방법을 비교하였다.