• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국진공학회지
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• 제5권3호
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• pp.175-180
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• 1996

Double conductance method is proposed as an effectvie way to measure real outgassing rates of materials regardless of their adsorbing power. The real outgassing rate and the sticking coefficient of the CFC (carbon fiber composite) which is used widely as the material for armor plates infusion experiment devices were obtained by adopting this method. At $40^{\circ}C$ the real ougassing rate was $Pa, m^3/s.m^2$(in $N_2$ equivalent), which was higher than 5 times the measured one, and the sticking coefficient was about 0.018($H_2O\; and \;H_2$ were the main residual gases).

• 한국진공학회지
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• 제14권4호
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• pp.171-179
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• 2005

몬테카를로 계산을 통해 표면 거칠기와 세공 표면밀도가 게터의 겉보기 부착계수에 미치는 영향을 정량화했다. 또 부착계수와 게터 내부에서 확산속도에 따라 게터 흡착속도가 어떤 형태로 변화하는지 해석한 결과를 소개한다.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.1029-1034
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• 2003

The Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$, superconducting thin films arc fabricated by using the sputtering and evaporation method. Because we confirmed the sticking ratio of Bi element in the Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$ superconducting thin film fabricated by using the sputtering method was much lower than the expected value, to get the enough number of the flakes of Bi, faraday cup was used to evaporate Bi clement. As a result of the fabrication, Bi 2201 and Bi 2212 single phases could be made by the optima of deposition condition. And we confirmed the sticking coefficient of Bi element was clearly related to the temperature change of the substrate and the generation of Bi22l2 phase

• Environmental Engineering Research
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• 제13권3호
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• pp.141-146
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• 2008

Transport of Escherichia coli ATCC 11105 through porous media was investigated in this study using two sets of column experiments to quantify the attachment-related parameters (sticking efficiency, attachment rate coefficient and filter factor). The first set of experiments was performed in quartz sand under different ionic strength conditions (1, 20, 100, 200 mM) while the second experiments were carried out in quartz sand mixed with metal oxyhydroxide-coated sand (0, 5, 10, 25%). The breakthrough curves of bacteria were obtained by monitoring effluent, and then bacterial mass recovery and attachment-related parameters were quantified from these curves. The first experiments showed that the mass recoveries were in the range of 13.3 to 64.7%, decreasing with increasing ionic strength. In the second experiments, the mass recoveries were in the range of 15.0 to 43.4%, decreasing with increasing coated sand content. The analysis indicated that the sticking efficiency, attachment rate coefficient and filter factor increased with increasing ionic strength and coated sand content. The value of filter factor in the first experiments ranged from 1.45 e-2 to 6.72 e-2 1/cm while in the second experiments it ranged from 2.78 e-2 to 6.32 e-2 1/cm. Our filter factor values are one order of magnitude lower than those from other studies. This discrepancy can be attributed to the size of sand used in the experiment. The analysis demonstrated that the travel distance of bacteria estimated using the filter factor can be varied greatly depending on the solution chemistry and charge heterogeneity of porous media.

• 방사성폐기물학회지
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• 제13권4호
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• pp.315-319
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• 2015

전해환원공정의 금속전환체로부터 우라늄을 회수하는 전해정련공정의 수율을 높이기 위해 고수율 전해정련장치가 개발되었다. 전해정련장치의 수율을 증대시키기 위해서는 고체음극에 전착되는 우라늄 덴드라이트를 음극 표면으로부터 효율적으로 회수할 수 있어야 한다. 철강 재료의 음극을 고체음극으로 사용하면, 우라늄 덴드라이트가 전착되어 쉽게 떨어지고 않고 고착 되어 점착계수(sticking coefficient)가 높아진다. 본 연구에서는 효율적으로 고체음극의 점착계수를 낮출 수 있는 진동 탈리법을 개발하였고 이를 적용하였다. 고체음극에 진동을 가함으로써 고체 표면에서 우라늄 전착물이 흑연음극의 자발특성과 유사하게 효율적으로 탈리됨을 확인하였다. 이러한 진동모드에 의한 고체음극에서의 전착물의 탈리 특성을, 고수율 전해정련장치 개념으로 개발한 흑연음극의 자발탈리 특성과 비교 검토하였다. 그리고 우라늄 덴드라이트의 진동 탈리에 대한 인가전류밀도와 진동 스트로크에 의한 영향 등을 고찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.25-25
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• 2000

In this talk we discuss the dynamics of hydrogen on the Si(100)-2xl surface. At room temperature the sticking coefficient for molecular hydrogen on this surface is less than 10sup-12. However, hydrogen molecules desorbing from the surface do not have an excess of energy, suggesting at best a small barrier on the exit channel. These observations have led to speculation about the validity of detailed balance in this system. Here we show that this discrepancy can be explained by considering both the surface-molecule co-ordinate and that associated with the Si-Si dimer bond tiltangle. By preparing the surface dimers with a specific tiltangle we demonstrate that the barrier to adsorption is a function of this angle and that the sticking coefficient dramatically increase for certain angles. The adsorption-desopption dynamics can then be described in terms of a common potential energy hypersurface involving both of these co-ordinates. The implications of these observations are also discussed. The dynamics of adsorbed hydrogen atoms on the Si(100) surface is also described. Paired dangling bonds produced following recombinative hydrogen desorption are mobile at elevated temperatures. Pairs of dangling bonds are observed to dissociate, diffuse, and ultimately recombine. At sufficiently elevated temperatures dangling bond exchange reactions are observed. These data are analyzed in terms of an attractive zone and an effective binding interaction between dangling bonds. Insights that this provides into the nature of surface defects and the localized chemistry that occurs on this surface, are also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1215-1217
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• 2005

One of the important problems in recent AC-PDP technology is the image sticking. In this research, we have investigated the PDP cell with constraint deposition MgO on phosphor, the electrical and optical properties in the PDP cell were examined. Also, we have investigated the correlation with image sticking and degraded MgO protective layer, phosphor in AC-PDP. As a result, we measured the secondary electron emission coefficient ${\gamma}$, discharge characteristics and Brightness for the constraint degraded phosphor are compared with those of nondegraded phosphor.