• Composites Research
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• v.18 no.6
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• pp.9-18
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• 2005

With the wide applications of fiber-reinforced composite material in aero-structures and mechanical parts, the design of composite joints have become a very important research area because the joints are often the weakest areas in composite structures. This paper presents an analytical study of the stress distributions in mechanically single-fastened and multi-fastened composite laminates. The finite element models which treat the pin and hole contact problem using a contact stress analysis are described. A dimensionless stress concentration factor is used to compare the stress distributions in composite laminates quantitatively In the case of single-pin loaded composite laminate, the effects of stacking sequence, the ratio of a hole diameter and the width of a laminate (W/D ratio), the ratio of hole diameter and distance from edge to hole (E/D ratio), friction coefficient and clamping force are considered. In the case of multi-pin loaded composite laminate, the influence of the number of pins, pitch distance, number of rows, row spacing and hole pattern are considered. The results show that P/D ratio and E/D ratio affect more on stress distributions near the hole boundary than the other factors. In the case of multi-pin loaded composite laminate, the stress concentration in the double column case is better than the other cases of multi-pin loaded composite laminate.

• Geophysics and Geophysical Exploration
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• v.16 no.3
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• pp.171-179
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• 2013

An automated ultrasonic velocity measurement system adopting pulse-echo-overlap (PEO) method has been constructed, which is known to be a precise and versatile method. It has been applied to velocity measurements for 5 kinds of engineering plastic cores and compared to first arrival picking (FAP) method. Because it needs multiple reflected waves and waves travel at least 4 times longer than FAP, PEO has basic restriction on sample length measurable. Velocities measured by PEO showed slightly lower than that by FAP, which comes from damping and diffusive characteristics of the samples as the wave travels longer distance in PEO. PEO, however, can measure velocities automatically by cross-correlating the first echo to the second or third echo, so that it can exclude the operator-oriented errors. Once measurable, PEO shows essentially higher repeatability and reproducibility than FAP. PEO system can diminish random noises by stacking multiple measurements. If it changes the experimental conditions such as temperature, saturation and so forth, the automated PEO system in this study can be applied to monitoring the velocity changes with respect to the parameter changes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.307-313
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• 2010

One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.