• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.29-29
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• 2009

현재 고집적 비휘발성 메모리 소자로는 MRAM (Magnetic Random Access Memory)과 PRAM (Phase Magnetic Random Access Memory)이 활발하게 미국과 일본, 한국 등에서 다양한 연구가 진행되어 오고 있다. 이 중에서 MRAM은 DRAM과 비슷한 10 ns의 빠른 읽기/쓰기 속도와 비휘발성 특성을 가지고 있으며, 전하를 저장할 커패시터가 필요 없고, 두 개의 자성충에 약 10 mA 정도의 전류를 가하면 그때 발생하는 약 10 Oe의 자장을 개개의 비트를 write하고, read 시에는 각 비트의 자기저항을 측정함으로써 데이터를 저장하고 읽을 있으므로, 고집적화가 가능성하다 [1]. 현재 우수한 박막 재료가 개발 되었으나, 고집적 MRAM 소자의 양산에는 해결 하여야 하는 문제점이 있다. 특히 다층 박막으로 구성되어 있으므로 식각 공정의 개발이 필수적이다. 지금까지 MRAM 재료의 식각은 주로 Ion milling, ICP, ECR등의 플라즈마 장치를 되었고, 식각 가스로는 할로겐 기체와 금속카보닐 형성을 위한 Co/$NH_3$와 $Ch_3OH$ 기체가 이용되고 있다. 그러나 할로겐 계열의 기체를 사용할 경우, 식각 부산물들의 높은 끓는점 때문에 식각 부산물이 박막의 표면에서 열적 탈착에 의하여 제거되지 않기 때문에 높은 에너지를 가지는 이온의 도움에 의한 식각이 필요하다. 또한 Cl 계열의 기체를 사용할 경우, 식각 공정 후, 시료가 대기에 노출되면 대기 중의 수분과 식각 부산물이 결합하여 부식 현상이 발생하게 된다. 그러므로 이를 방지하기 위한 추가 공정이 요구된다. 최근에는 부식 현상이 없고, MTJ 상부에 사용되는 Ta 또는 Ti Hard mask와의 높은 선택비를 가지는 $CH_3OH$ 또는 CO/$NH_3$가 사용되고 있다. 하부 박막에 따른 식각 특성에 연구와 다층의 박막의 식각 공정에 발생에 관한 발표는 거의 없다. MRAM을 양산에 적용하기 위하여서는 Main etch 공정에서 빠른 식각 공정이 필요하고, Over etch 공정에서 하부박막에 대한 높은 선택비가 요구된다. 그러므로 본 논문에서는 식각 변수에 따른 플라즈마 측정과 표면 반응을 비교하여 각 공정의 식각 메커니즘을 규명하고, Main Etch 공정에서는 $Cl_2$/Ar 또는 $BCl_3$/Ar 가스를 이용하여 식각 실험을 수행하고, Over etch 공정에는 낮은 Ta 박막 식각 속도를 가지는 $Ch_4/O_2$/Ar 또는 $Ch_3OH$/Ar 가스를 이용하고자 한다. 플라즈마 내의 식각종과 Ta 박막과의 반응을 XPS와 AES를 이용하여 분석하고, 식각 공정 변수에 따른 식각 속도, 식각 선택비와 식각 프로파일 변화를 SEM을 이용하여 관찰한다.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.54-62
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• 2015

Although NAND flash-based SSD (Solid-State Drive) provides superior performance in comparison to HDD (Hard Disk Drive), it has a major drawback in write endurance. As a result, the lifetime of SSD is determined by the workload and thus it becomes a big challenge in current technology trend of such as the shifting from SLC (Single Level Cell) to MLC (Multi Level cell) and even TLC (Triple Level Cell). Most previous studies have dealt with wear-leveling or improving SSD lifetime regarding hardware architecture. In this paper, we propose the optimal configuration of host I/O stack focusing on file system, I/O scheduler, and link power management using JEDEC enterprise workloads in terms of WAF (Write Amplification Factor) which represents the efficiency perspective of SSD life time especially for host write processing into flash memory. Experimental analysis shows that the optimum configuration of I/O stack for the perspective of SSD lifetime is MinPower-Dead-XFS which prolongs the lifetime of SSD approximately 2.6 times in comparison with MaxPower-Cfq-Ext4, the best performance combination. Though the performance was reduced by 13%, this contributions demonstrates a considerable aspect of SSD lifetime in relation to I/O stack optimization.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.22 no.5
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• pp.1069-1078
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• 2012

It is known that memory has been frequently a target threatening the computer system's security while attacks on the system utilizing the memory's weakness are actually increasing. Accordingly, various memory protection mechanisms have been studied on OS while new attack techniques bypassing the protection systems have been developed. Especially, buffer overflow attacks have been developed as attacks of Return to Library or Return-Oriented Programing and recently, a technique bypassing the countermeasure against Return-Oriented Programming proposed. Therefore, this paper is intended to suggest a detection mechanism at binary level by analyzing the procedure and features of Jump-Oriented Programming. In addition, we have implemented the proposed detection mechanism and experimented it may efficiently detect Jump-Oriented Programming attack.

• Journal of the Korea Society of Computer and Information
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• v.18 no.4
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• pp.1-11
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• 2013

Dynamic Software Update(DSU) is a technique, which updates a new version of the software to a running process without stopping. Many DSU systems that update C application programs are introduced. However, these DSU systems differ in implementation method or in main features. In this paper, we propose a new DSU system that can solve some disadvantages of existing DSU systems. DSU system presented in this paper splits existing program to code, global data and local data and then updates each part of the program considering the characteristics of the respective parts. The proposed system in this paper is implemented and tested on Linux. Also, we compared our DSU system with other DSU systems and we could find some strength of our DSU system. First, the code memory usage of our DSU system can be efficient since our system does not need to maintain code of an old version. Second, the global data memory waste is small because our system does not need to allocate the global data again which is not modified in the new version. Finally, we restore local data of old version in stack area of the new version using stack reconstruction technique. This paper is meaningful since we proposed a new DSU method and we implemented a full DSU system using the method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.118-119
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• 2005

PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.258-261
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• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.232-232
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• 2010

정보화 산업의 발달은 DRAM, flash memory 등을 포함한 기존의 반도체 메모리 소자를 대체할 수 있는 차세대 메모리 소자에 대한 개발을 요구하고 있다. 특히 magnetic random access memory (MRAM)는 SRAM과 대등한 고속화 그리고 DRAM 보다 높은 기록 밀도가 가능하고 낮은 동작 전압과 소비전력 때문에 대표적인 차세대 비휘발성 메모리로 주목받고 있다. 또한 MRAM소자의 고집적화를 위해서 우수한 프로파일을 갖고 재증착이 없는 나노미터 크기의 magnetic tunnel junction (MTJ) stack의 건식 식각에 대한 연구가 선행되어야 한다. 본 연구에서는 고밀도 반응성 이온 식각법(Inductively coupled plasma reactive ion etching; ICPRIE)을 이용하여 재증착이 없이 우수한 식각 profile을 갖는 CoFeB과 IrMn 박막을 형성하고자 하였다. Photoresist(PR) 및 Ti 박막의 두 가지 마스크를 이용하여 HBr/Ar, HBr/$O_2$/Ar 식각 가스들의 농도를 변화시키면서 CoFeB과 IrMn 박막의 식각 특성들이 조사되었다. 자성 박막과 동일한 조건에 대하여 hard mask로서 Ti가 식각되었다. 좋은 조건을 얻기 위해 HBr/Ar 식각 가스를 이용 식각할 때 pressure, bias voltage, rf power를 변화시켰고 식각조건에서 Ti 하드마스크에 대한 자성 박막들의 selectivity를 조사하고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.8
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• pp.1254-1260
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• 2009

CDMA tele-Controller system is designed with a low power consumption 8 bit microcontroller, ATmega 2560. ATmega 2560 microcontroller consists of 4 UART (Universal asynchronous receiver/transmitter) ports, 4 kbytes EEPROM, 256 kbytes flash memory, 4 kbytes SRAM. 4 URAT is used for CDMA modem, communication for GPS module, EEPROM is used for saving a configuration for program running, a flash memory of 256 kbytes is used for storing a F/W(Firm Ware), and SRAM is used for stack, storing memory of global variables while program running. We have tested the communication distance between the coast station and sea by the fabricated control board using 800 MHz CDMA modem and GPS module, which is building for the navigational aid management system by remote control. As a results, the receiving signal strength is above -80 dBm, and then the characteristics of the control board implemented more than 10 km in the distance of the communication.

• Journal of Advanced Marine Engineering and Technology
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• v.35 no.6
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• pp.842-848
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• 2011

A fabricated hybrid control board using multi-communication is designed with a low power 8-bit microcontroller, ATxmega128A1. The microcontroller consists of 8 UART (Universal asynchronous receiver/transmitter) ports, 2 kbytes EEPROM, 128 kbytes flash memory, 8 kbytes SRAM. The 8 URAT ports are used for a multi-communication modem, a GPS module, etc. The EEPROM is used for saving a configuration for running programs, and the flash memory of 128 kbytes is used for storing a F/W (Firm Ware), and the 8 kbytes SRAM is used for stack and for storing memory of global variables while running programs. If we use the multi-communication of CDMA, TRS and RF to remotely control Aid to Navigation, it is able to remove the communication shadow area. Even though there is a shadow area for an individual communication method, we can select an optimal communication method. The compatibility of data has been enhanced as using of same data frame per communication device. For the test, 8640 of data have been collected from each buoy during 30 days in every 5 minutes and the receiving rate of the data has shown more than 85 %.