• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.7-8
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• 2008

The memory characteristics of charge trap flash (CTF) with $HfO_2$ charge trap layer were investigated. Especially, we focused on the effects of tunnel barrier engineering consisted of $SiO_2/Si_3N_4/SiO_2$ (ONO) stack or $Si_3N_4/SiO_2/Si_3N_4$ (NON) stack. The programming and erasing characteristics were significantly enhanced by using ONO or NON tunnel barrier. These improvement are due to the increase of tunneling current by using engineered tunnel barrier. As a result, the engineered tunnel barrier is a promising technique for non-volatile flash memory applications.

• 한국유체기계학회 논문집
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• 제15권5호
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• pp.11-19
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• 2012

The main function of fuel cell manifold is to render reactants distribution as uniform as possible into a fuel cell stack. The purpose of this study is to numerically investigate the effects of stack manifold design on reactants distribution within a fuel cell stack. Four manifold designs with different manifold entrance shapes (expansion or diffuser) and different values of the extra width between the cell outer channel and manifold side wall are considered and applied to the fuel cell stack consisting of 50 cells. Since the fuel cell stack geometry involves several millions of grid points for numerical calculations, a parallel computing methodology is employed to substantially reduce the computational time and overcome the memory requirement. The numerical simulations are carried out and calculated results clearly demonstrate that both the manifold entrance shape and extra width have a substantial influence on manifold performance, controlling the degree of flow separation and entrance length for fully developed flow in the manifold channel. Finally, we suggest the optimum design of fuel cell manifold based on the simulation results.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2006년도 춘계종합학술대회
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• pp.894-897
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• 2006

Spatial distribution of injected electrons and holes is evaluated by using single-junction charge pumping technique in SONOS(Poly-silicon/Oxide/Nitride/Oxide/Silicon) memory cells. Injected electron are limited to length of ONO(Oxide/Nitride/oxide) region in locally ONO stacked cell, while are spread widely along with channel in fully ONO stacked cell. Hot-holes are trapped into the oxide as well as the ONO stack in locally ONO stacked cell.

• 한국정보과학회논문지:소프트웨어및응용
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• 제31권6호
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• pp.840-848
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• 2004

자바에서 사용이 끝난 객체의 수집(garbage collection)은 프로그래머의 메모리 관리 부담을 덜어준다는 장점이 있다. 그러나, 수행 속도에 영향을 미치게 되므로 정적 분석 기법을 사용하여 이를 극복하는 기법이 제안되어왔다. 이 중 하나인 스택 저장 기법은, 힙메모리 대신 메소드 스택에 저장될 수 있는 객체들을 수행 전에 분석하여 파악해두는 방식을 따른다. 본 논문에서는 메소드의 호출/반환에 대해 직접 분석하여 자신을 생성한 메소드의 반환 후에도 접근될 소지가 있는 객체들을 판별하는 정적 분석 기법을 제시한다. 이로써 객체와 변수의 지정(assignment) 관계 분석을 기준으로 하는 기존의 스택 저장 기법들에서 간과되었던 객체들 중에서도 스택에 저장할 수 있는 대상을 발견할 수 있도록 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

• 한국정보처리학회논문지
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• 제2권3호
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• pp.364-373
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• 1995

본 논문은 동적 자료구조의 확률론적 운영방식의 설계와 그 성능분석의 이론적 접근 방법을 제시한다. 즉 m개의 셀로서 구성된 일련의 연속된 블록에 두 개의 스택 을 할당하여 공유하는 시스템의 확률적 운용방식의 효율성을 해석적 방법에 의한 성 능분석을 통하여 그 결과를 제시한다. 특히 스택 원소의 삽입과 제거는 스택의 현재 의 크기에 따라 빈도를 달리하는 방식을 제안한다. 따라서 두 스택의 충돌까지 스택 조작 횟수의 평균과 분산등 통계적 특성을 희소 사건 확률 계산이론에 의하여 m$\longrightarrow$$\infty$ 일 때 점근적 결과를 제시한다. 또한 유한상태기계, 컴퓨터 및 정보 시스템의 성능 분석에 응용할 수 있는 보다 일반적인 방법을 고찰한다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.414-417
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• 1997

Many small-sized real-time kernels do not provide memory management and device drivers, not to mention file management. In this paper, we propose a design and implementation of TCP/IP protocol stack for such small real-time kernels based on [6] where we studied issues to be considered for porting the functionalities of TCP/IP for such small real-time kernels.

• 정보과학회 컴퓨팅의 실제 논문지
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• 제24권3호
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• pp.129-137
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• 2018

낸드 플래시 메모리 기반의 NVMe(Non-Volatile Memory express) SSD(Solid State Drive)는 멀티 I/O 큐 환경을 제공하는 PCIe 인터페이스 기반에 NVMe 프로토콜을 사용하는 저장장치이다. NVMe SSD는 Multi-core 시스템에서 병렬 I/O 처리가 가능하고 SATA SSD에 비해 대역폭이 크며 대용량의 저장 공간을 제공하기 때문에 데이터 센터, 클라우드 컴퓨팅 등에 사용될 차세대 저장장치로 주목받고 있다. 하지만 가상화 시스템에서는 소프트웨어 I/O 스택의 병목으로 인하여 NVMe SSD의 성능을 충분히 활용하지 못하고 있다. 특히, Xen과 KVM과 같이 호스트 시스템의 I/O 스택을 사용하는 경우에는, 호스트 시스템과 가상머신의 중복된 I/O 스택을 통해서 입출력이 처리되기 때문에 성능 저하가 크게 발생한다. 본 논문에서는 NVMe SSD에 직접 접근하는 기술을 KVM 가상화 시스템에 적용함으로써 가상 머신 I/O의 성능을 향상시키는 Direct-AIO (Direct-Asynchronous I/O)엔진을 제안한다. 그리고 QEMU 에뮬레이터에 제안한 엔진을 개발하고 기존의 I/O 엔진과의 성능 차이를 비교 및 분석한다.

• International journal of advanced smart convergence
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• 제12권1호
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• pp.76-81
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• 2023

Journaling file systems are widely used to keep file systems in a consistent state against crash situations. As traditional journaling file systems are designed for block I/O devices like hard disks, they are not efficient for emerging byte-addressable NVM (non-volatile memory) media. In this article, we present a new in-memory journaling file system for NVM that is different from traditional journaling file systems in two respects. First, our file system journals only modified portions of metadata instead of whole blocks based on the byte-addressable I/O feature of NVM. Second, our file system bypasses the heavy software I/O stack while journaling by making use of an in-memory file system interface. Measurement studies using the IOzone benchmark show that the proposed file system performs 64.7% better than Ext4 on average.