• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.90-93
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• 2004

In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.11-18
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• 2012

The characteristic features of solid oxide fuel cells are reviewed from the viewpoint of the thermodynamic variables to be developed inside cells/stacks particularly in terms of gradients of chemical potential, electrical potential and temperature and corresponding flows of air, fuel, electricity and heat. Examples of abrupt destruction of SOFC systems were collected from failures in controlling their steady flows, while continuous degradation was caused by materials behaviors under gradients of chemical potentials during a long operation. The local equilibrium approximation has been adopted in NEDO project on the durability/reliability of SOFC stacks/systems; this makes it possible to examine the thermodynamic stability/reactivity as well as mass transfer under the thermodynamic variable gradients. Major results of the NEDO project are described with a focus on degradation/deterioration of electrolyte and electrode materials.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.7
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• pp.642-650
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• 2008

In this paper, structural behavior of Gasket and GDL of a PEMFC stack is studied to improve the performance and to secure the safety. In the Gasket analysis Mooney-Rivlin strain energy function is used to consider hyperelasticity of load and displacement. The material properties is determined by testing specimens of the gasket at uni-axial and equi-biaxial mode and compared with finite element analysis results. By measuring a thickness change, the material property of GDL is determined. The pressure drop of a unit cell is measured along the channel for the clamping force. A cross sectional change of channel base on the experimental data is obtained experimentally and compare with FEM analysis results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.201-201
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• 2010

DRAM (dynamic random access memory)은 하나의 트랜지스터와 하나의 캐패시터의 구조 (1T/1C)를 가지는 구조로써 빠른 동작 속도와 고집적에 용이하다. 하지만 고집적화를 위해서는 최소한의 캐패시터 용량 (30 fF/cell)을 충족시켜 주어야 한다. 이에 따라 캐패시터는 stack 혹은 deep trench 구조로 제작되어야 한다. 위와 같은 구조로 소자를 구현할 시 제작공정이 복잡해지고 캐패시터의 집적화에도 한계가 있다. 이러한 문제점을 보완하기 위해 1T-DRAM이 제안되었다. 1T-DRAM은 하나의 트랜지스터로 이루어져 있으며 SOI (silicon-on-insulator) 기판에서 나타나는 floating body effect를 이용하여 추가적인 캐패시터를 필요로 하지 않는다. 하지만 SOI 기판을 이용한 1T-DRAM은 비용측면에서 대량생산화를 시키기는데 어려움이 있으며, 3차원 적층구조로의 적용이 어렵다. 하지만 다결정 실리콘을 이용한 기판은 공정의 대면적화가 가능하고 비용적 측면에서 유리한 장점을 가지고 있으며, 적층구조로의 적용 또한 용이하다. 본 연구에서는 ELA (eximer laser annealing) 방법을 이용하여 비정질 실리콘을 결정화시킨 기판에서 1T-DRAM을 제작하였다. 하지만 다결정 실리콘은 단결정 실리콘에 비해 저항이 크기 때문에, 메모리 소자로서 동작하기 위해서는 높은 바이어스 조건이 필요하다. 게이트 산화막이 얇은 경우, 게이트 산화막의 열화로 인하여 소자의 오작동이 일어나게 되고 게이트 산화막이 두꺼울 경우에는 전력소모가 커지게 된다. 그러므로 메모리 소자로서 동작 할 수 있는 최적화된 게이트 산화막 두께가 필요하다. 제작된 소자는 KrF-248 nm 레이저로 결정화된 ELA 기판위에 게이트 산화막을 10 nm, 20 nm, 30 nm 로 나누어서 증착하여, 전기적 특성 및 메모리 특성을 평가하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.92.1-92.1
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• 2011

Anode off-gas of high temperature fuel cells such as MCFC contains a significant amount of combustible components like hydrogen, carbon monoxide and methane according to fuel utilization ratio of the fuel cell stack. Thus, it is important to fully burn anode off-gas and utilize the generated heat in order to increase system efficiency and reduce emissions as well. In the present study, 25 kW catalytic combustor has been developed for the application to a load-following 300kW MCFC system. Mixing and combustion characteristics have been experimentally investigated with the catalytic combustor. Since the performance of catalytic combustor directly depends on the combustion catalyst, this study has been focused on the experimental investigation on the combustion characteristics of multiple catalysts having different structures and compositions. Results show that the exhaust emissions are highly dependent on the catalyst loading and the ratio of catalytic components. Test results at load-following conditions are also shown in the present study.

• Journal of Powder Materials
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• v.17 no.2
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• pp.123-129
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• 2010

The fabrication of interconnect from titanium powders and $TiN_x$ powders is investigated. Corrosion-resistant titanium and $TiN_x$ are used as reinforcement in order to reveal high heat and corrosion resistance at the elevated temperature. We fabricated the plates for interconnect reinforced with $TiN_x$ by mixing titanium powders with 10 wt.% of nano-sized $TiN_x$. Spark Plasma Sintering (SPS) was chosen for the sintering of these composites. The plate made of titanium powders and $TiN_x$ powders demonstrates higher corrosion resistance than that of the plate of titanium powders alone. The physical properties of specimens were analyzed by performing hardness test and biaxial strength test. The electrochemical properties, such as corrosion resistance and hydrogen permeability at high temperature, were also investigated. The microstructures of the specimens were investigated by FESEM and profiles of chemical compositions were analyzed by EDX.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.30 no.3
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• pp.143-148
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• 2018

In this study the performance and humidity variation for 2 unit cells connected in series were experimentally measured. The relative flow direction of hydrogen and air was changed from parallel flow to counter flow. Internal humidity distribution was then measured by 5 embedded sensors on each channel. In all experimental conditions, the former unit cell showed a better performance and the gap is noted to be higher when counter flow is applied. The performance was noted to be higher at high humidification case in the parallel flow. However, in the counter flow, the difference of performance according to the humidification is negligible. Hydrogen and air are discharged from the PEMFC unsaturated with water vapor at parallel flow/low humidification condition, which explains lower performance of the PEMFC than other conditions. The humidities in hydrogen and air streams of counter flow were noted to increase rapidly even at low humidification condition and the consequential even hydration of membrane is the reason of higher performance.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.67-78
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• 1984

EAROM device is an n-channel MOS transistor with a control gate stack ed on the floating gate. On account of channel injection type, channel lengths are designed 4-8 $\mu$m and chinnel widths 5-14 $\mu$m. These devices which have fourstructures of different type control gate are designed by NMOS 5 $\mu$m design rule and fabricated by double polysilicon gate NMOS Process. Double ion implantation is applied to increase punchthrough voltage and gate-controlled channel breakdown voltage. The drain and gate voltage for programming was 13-17V and 20-25V, respectively. EPROM cell fabricated could be erased not by optical method but by electrical method. The result of charge retention test showed decrease in stored charges by 4% after 200 hours at 1$25^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.822-827
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• 2000

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24$\AA$ for tunnel oxide, 74 $\AA$ for nitride and 25 $\AA$ for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97$\times$10$\^$10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04$\times$10$\^$19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.4
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• pp.527-534
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• 2012

Thermal batteries are primary batteries that use molten salts as an electrolyte and employ an internal pyrotechnic source to heat the battery stack to operating temperatures, typically between 450 and $550^{\circ}C$. The unit cell of thermal batteries consists of an anode, an electrolyte, a cathode, a heat pellet and a current collector. The heat source for such batteries is typically heat pellets based on $Fe/KClO_4$. The elevated temperature by combustion of heat pellet is supposed to cause a flatness non-uniformity, buckling, with a lateral extension diameter of current collector. This paper mainly focused on the combustion and buckling model of current collector to simulate the effect of heat source. Mechanical stresses in the current collector caused by thermal stress is a critical design consideration of thermal batteries because the internal short circuit could be occurred.