• The Korean Journal of Ceramics
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• 제7권2호
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• pp.93-96
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• 2001

The Y- or Yb-doped SrZrO$_3$ proton conductors were fabricated using the powders prepared by the self-propagating high-temperature synthesis (SHS). The electrical conductivity was evaluated from an a.c. impedance measurements. The conductivity of SrZr$_{0.92}$Yb$_{0.08}$O$_{3-\delta}$ was 1.8$\times$10$^{-3}$ Scm$^{-1}$ at $900^{\circ}C$ in dry air atmosphere and its activation energy was 0.50 eV. The conductivity in wet air was larger, compared with the dry air, and the activaton energy of SrZr$_{0.92}$Yb$_{0.08}$O$_{3-\delta}$ in wet air was 0.40 eV.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.146-148
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• 2003

SrZrO$_3$ resistive oxide barriers on Ag sheathed Bi2223 monocore tapes were prepared by the sol-gel and dip coating method to reduce AC coupling loss. The performance of the dip-coated SrZrO$_3$ thin films was evaluated in terms of bond strength and surface microstructure by varying the amount of PVP (polyvinylpyrrolidone) binder. Although bond strength and coating thickness increased as the PVP content rose, surface microcracking was more severe for the specimen containing higher content of PVP binder. It suggests that coating thickness and microcracking of the SrZrO$_3$ films on Bi2223 tapes was governed primarily by the amount of PVP binder.

• 한국세라믹학회지
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• 제39권10호
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• pp.1001-1006
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• 2002

은이 피복된 Bi(2223) 단심 초전도 선재에 절연층으로 $SrZrO_3$ 피막을 졸-겔과 딥-코팅법으로 제조하여 $SrZrO_3$ 코팅층과 초전도 선재간 접착력 특성을 조사하였다. 실험인자로는 출발원료의 몰비, 유기화합물 첨가량, 건조온도 및 시간, 열처리 온도 및 시간이었으며 다구찌법의 망대특성과 $L_18(2^1{\times}3^7)$ 직교배열표를 이용하여 코팅층의 최적조건인 인자와 수준 조합의 최적화를 접착강도를 측정하여 분석하였다. 최적의 접착 특성을 가진 코팅조건은 Sr/Zr의 몰비가 0.3/0.7, 유기화합물 첨가량이 5wt%, 건조온도 및 시간은 160${\circ}C$ 10분, 열처리 온도 및 시간은 500${\circ}C$ 20분이었다. 분산분석 결과, 유의수준이 ${\alpha}$=0.1인 통계적으로 90% 신뢰공정이었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.136-136
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• 1997

• Bulletin of the Korean Chemical Society
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• 제6권6호
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• pp.344-347
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• 1985

Perovskite type oxides of $SrTiO_3,SrZrO_3,and\;SrTi_{1-x}Zr_xO_3$ have been systematically synthesized at $1250^{\circ}C$and $1550^{\circ}C$ with specimens containing additions of up to x=0.9 of zirconium by solid state reactions and characterized by X-ray diffraction. X-ray diffraction studies showed that the compound $SrTi_{1-x}Zr_xO_3$ has cubic structure. The lattice paramters of $SrTi_{1-x}Zr_xO_3$ solid solutions obey the Vegard's law and fairly large increase in volume can acompany the formation of this solution with increasing Zr content(X). Assuming the lattice constants of perovskite type compounds $A(B_{1-x}B'_x)O_3$where $B_{1-x}B'_x$ is $Ti_{1-x}Zr_x$, to be a linear function of the ionic radii of B and B' ions, the disordered ion pair of $Ti^{4+}$and $Zr^{4+}$ was verified from the lattice constants of a series compounds varying x=0,0.05, 0.25, 0.5, 0.75, 0.9, and 1.0 with known isovalent pairs.

• 한국세라믹학회지
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• 제35권8호
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• pp.791-794
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• 1998

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.533-540
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• 1997

The microwave dielectric properties of ((P $b_{1-x}$ C $a_{x}$)Zr $O_3$ and (P $b_{0.63}$,C $a_{0.37-x}$ $M_{x}$)Zr $O_3$(M=Mg,Sr) ceramics were investigated. In (P $b_{1-x}$ C $a_{x}$)Zr $O_3$ (X=0.33~0.40) ceramics, high quality factor and small temperature coefficient of resonant frequency were obtain in (P $b_{0.63}$C $a_{0.37}$)Zr $O_3$with perovskite structure. In the case of (P $b_{0.63}$C $a_{0.37-x}$M $g_{x}$)Zr $O_3$ dielectric constant temperature coefficient of resonant frequency increased and quality factor decreased due to increase of polarization of A-O bonding. When replacing Ca ion with Sr ion with large ion radius, polarization decreased with increased of bonding length and thus dielectric constant and temperature coefficient of resonant frequency decreased.decreased.creased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.302-302
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• 2007

The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

• 한국재료학회지
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• 제10권9호
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• pp.607-611
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• 2000

고밀도 DRAM에서 박막 커패시터로의 적용을 위해 Zr이 첨가된 (Ba(sub)1-x, Sr(sub)x)TiO$_3$<원문차조> 박막이 r.f. magnetron sputter-ing 법에 의해 제조되었다. 증착된 박막들은 다결정질 구조를 보였으며 증착압력이 감소함에따라 Zr/Ti의 비가 현저히 증가하였으며 본 연구에서는 얻어진 박막들은 100kHz에서 380∼525의 유전상수값을 나타냈다. 전압에 따른 커패시턴스와 분극량의 변화는 이력특성을 크게 보이지 않아 상유전상으로 형성되었음을 보였다. 누설전류밀도는 증착압력이 감소함에 따라 작아지는 경향을 보였고 10mTorr이상에서 증착된 박막의 경우 200kV/cm의 전계에서 10(sup)-7∼10(sup)-8A/$\textrm{cm}^2$의 차수를 갖는 누설전류밀도를 보여 본 연구에서 제조된 (Ba(sub)1-x, Sr(sub)x)(Ti(sub)1-x, Zr(sub)x)O$_3$<원문참조>박막은 고밀도 DRAm을 위한 커패시터에의 적용가능성을 보였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2004년도 추계총회 및 연구발표회 초록집
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• pp.79.2-79.2
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• 2004