• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.111-115
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• 2003

200nm 정도의 두께를 가진 SBT 박막이 liquid delivery MOCVD 공정에 의해 (111) oriented Pt/Ti/$SiO_2$/Si 기판 위에 증착되었다 이 실험에서는 $Sr(TMHD)_2$tetraglyme, $Bi(ph)_3$ 그리고 $Ta(O^iPr)_4$(TMHD)를 출발 물질로 사용하였다. Sr 출발 물질의 열적 안정화를 위해서 adduct로 tetraglyme를 사용하여 실험하였고 유기 용매로는 n-butyl acetate를 사용하였다 Substrate temperature와 reactor pressure는 각각 $570^{\circ}C$와 5Torr로 유지시켰다. 또한 vaporizer의 용도는 $190-200^{\circ}C$, 그리고 delivery line 의 온도는 vaporizer 보다 높게 유지 $(220-230^{\circ}C)$하여 출발 용액을 분당 0.1ml로 50분간 주입하였다. 수송가스로 Ar, 산화제로 $O_2$ 가스를 사용하였다. 제조한 SBT 박막은 $750^{\circ}C$에서 열처리한 후 인가전압 3V와 5V에서 $2P_r$값이 각각 6.47, $8.98{\mu}C/cm^2$이었으며, $2E_c$값은 인가전압 3V와 5V에서 각각 2.05, 2.31V이었다 그리고 $800^{\circ}C$에서는$750^{\circ}C$에서 열처리한 SBT 박막보다 다소 우수한 이력특성을 나타내어 $2P_r$ 값은 인가전압 3V와 5V에서 각각 7.59, $10.18{\mu}C/cm^2$ 이었으며, $2E_c$값은 인가 전압 3V와 5V에서 각각 2.00, 2.21V 이었다.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.200-200
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• 2008

This paper reports on electrical characterization by IDC pattern using BST$(Ba_{0.5}Sr_{0.5}TiO_3)$ thin film. BST thin films have been deposited on $Al_2O_3$ Substrates by Nd-YAG pulsed laser deposition with a 355nm wavelength at $700^{\circ}C$. The post deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for I hours. The capacitance of IDC patterns have been measured from 1 to 10 GHz as a function fo electric field (${\pm}40$ KV/cm) at room temperature using interdiigitated Au electrodes deposited on top of BST. The IDC patterns have three type of fingers number. For the finger paris was increased onto $Al_2O_3$, the capacitance increased. The capacitance of 5 pairs finger was 0.3pF and 10 pairs finger was 0.9pF.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.117-119
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• 2003

YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) high temperature superconducting thin films were grown on SrTiO$_3$single crystal substrates by pulsed laser deposition(PLD). The texture and lattice parameter of the YBCO films were analysed using the GADDS (general area detector diffraction system) which enables XRD analyses to be done faster and with fewer sample movement than with the XRD system with point detector. The XRD results of the films grown in different deposition conditions are reported together with the SEM microstructure analysis results.ysis results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.92-95
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained at SCT15 thin film. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.10
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• pp.559-563
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• 2000

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also the composition of SCT thin films were closed to stoichiometry(1.081∼1.117 in A/B/ ratio). The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80∼+90[^${\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 2000[kHz]. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.472-473
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• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

• Progress in Superconductivity
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• v.8 no.1
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• pp.75-80
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• 2006

[ $Yb_2O_3$ ] films were successfully deposited on a cube-textured Ni and(100) $SrTiO_3$(STO) single crystal substrates by metal organic chemical vapor deposition(MOCVD) method using $H_2O$ vapor as an oxidant. $H_2O$ vapor was used in order to avoid the oxidation of Ni substrate. The working pressure and Ar flow rate were 10 Ton and 600 sccm, respectively. $Yb_2O_3$ films on STO were formed at high temperatures above $900^{\circ}C$. While XRD peaks from $Yb_2O_3$ were hardly detected at $900^{\circ}C$, the $Yb_2O_3$(400) texture was developed fur the films grown at deposition temperatures above $950^{\circ}C$. The AEM surface roughness of $Yb_2O_3$ film, grown on STO, was in the range of $6{\sim}10nm$ for the film deposited at $950^{\circ}C$ with a $H_2O$ vapor partial pressure of 5.5 Ton and deposition times of 3 and 5 mins. For cube-textured Ni substrate, both $Yb_2O_3$(222) and $Yb_2O_3$ (400) textures were developed textures at deposition temperatures above $850^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.4 s.107
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• pp.330-334
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• 2006

In this research, we fabricated paint-type EM wave absorbers by using Mn-Zn, Ni-Zn, Ba, Sr Ferrite, and Sendust. To prepare the absorbers, enamel, epoxy and urethane paints were used as binders. We tested EM wave absorption of them. The band-width of EM wave absorbers coated with $Al(OH)_3$ was larger than non-coated EM wave absorbers. The fabricated EM wave absorbers show a reflection coefficient of 20 dB approximately at X-band for a 2 mm double-layer sample.