• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• Economic and Environmental Geology
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• v.40 no.1 s.182
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• pp.47-66
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• 2007

The Sitting Buddha Carved on Rockcliff (National treasure No. 201) in Bukjiri consists of porphyritic biotite granite, which was fractured by three joint sets of NE-SW, EW and NS directions. They produced a physical weathering that broke many parts of the Buddha and background. The chemical index of alteration is 59 to 61 from the major elements in the granite that was weathered into producing kaolin minerals from alteration of feldspars and biotite. With weathering degree, major element compositions increase in $SiO_2$ and MnO, whereas decrease in $TiO_2,\;{Fe_2O_3}^t,\;MgO,\;CaO\;and\;K_2O$. Change proporations of trace elements to $Al_2O_3$ increase in all transition elements, Rb and Y, whereas decrease in Li, Sr and Ba. REE pattern increases only in HREE. Particularly, a decrease in CaO, $K_2O$, Sr and Ba results in what they are effluxed to dissolve from feldspars by groundwater. The Buddha image has been deteriorated into joints, color changes, brown rusts, granular decay, microorganic smears by the such weathering causes as deformation, moisture, temperature variation and microorganic living. The moisture, which leaks along the joints in the granite, not only dissolve to decompose minerals but also grows many microorganism and is frozen over during winter. NE-SW and NS joint sets affect to seep in water during rainy days to deteriorate the image because they extend outward.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.3
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• pp.90-94
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• 2004

The variation of electrical properties of (Ba,Sr)$TiO_3$ [BST] thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of AUBST/$SiO_2$/Si sandwich structure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage current was reduced in MIS capacitor with high quality $SiO_2$ layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and $SiO_2$ layer. The charge state densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applying $SiO_2$ layer between BST thin films and Si substrate, low leakage current of $10^{-10}$ order was observed.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.149-152
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• 2007

[ $(Ba_{0.6}Sr_{0.3}Ca_{0.1})TiO_3$ ](BSCT) thick films doped with 0.1 mol% $MnCO_3\;and\;Yb_2O_3(0.1{\sim}0.7mol%)$ were fabricated by the screen printing method on the alumina substrates. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The exothermic peak was observed at around $680^{\circ}C$ due to the formation of the poly crystalline perovskite phase. The lattice constants of the BSCT thick film doped with 0.7 mol% is 0.3994 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about $4.2{\mu}m$. The average thickness of all BSCT thick films was approximately $70{\mu}m$. Relative dielectric constant and dielectric loss of the specimen doped with 0.7 mol% $Yb_2O_3$ were 2823 and 3.4%, respectively. The Curie temperature of the BSCT thick films doped with 0.1 mol% $Yb_2O_3$ was $46^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.242-248
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• 2000

BST thin films were prepared with various deposition conditions by rf-magnetron sputtering. As substrate temperature increases and Ar/$O_2$ratio decreases, the electrical properties of the BST films improve. The conventional Schottky model and modified-Schottky model were introduced in order to investigate the leakage-current-conduction mechanisms of the deposited films. It was found that the modified-Schottky model better describes the current-conduction mechanism in the BST films than the conventional Schottky model. From the modified-Schottky model, optical dielectric constant ($\varepsilon$), electronic drift mobility ($\mu$), and barrier height $({\phi}_b)are calculated as $\varepsilon$=4.9, $\mu$=0.019 $\textrm{cm}^2$/V-s, and ${\phi}_b=0.79 eV.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.44-51
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• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.38-38
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• 2008

무선 통신에 사용되는 기판에서 passive device는 대부분 기판 위에 개별적으로 표면 실장 되고 있으며 전체 기판면적에 80% 정도를 차지하고 있다. 따라서 기판의 소형화, 경량화를 위하여 많은 면적을 차지하는 수동소자들을 다층인쇄회로기판(multi-layer circuit board)에 내장하는 내장형 수동소자(embedded passive device) 기술이 연구되고 있다. 본 연구원에서 개발한 복합재료는 무기물 충전제 $SrTiO_3$를 사용하였으며, 열가소성 수지로는 cyclo-olefin-polymer계열의 수지를 바탕으로 제작 하였고, 유전율7~7.5이고 유전손실은 0.0045이다. 또한 $SrTiO_3$/유기물 복합재료는 공정온도가 낮고 경제적인 유기물에 높은 유전상수를 갖는 무기물이 분산되어 있는 형태이며, 우수한 유전 특성, 화학적 안정성, 저온 제조공정, 제조단가의 감소, 패키징 크기의 감소 등의 장점을 갖는다. 개발된 재료를 기반으로 Multi-layer 구조를 이용한 다양한 용량대의 capacitor를 구현 하였으며, spiral inductor 와 내장형 spiral inductor를 구현하여 다양한 용량대의 inductor를 구현 하였다. 그리고 각각의 구조에 따른 inductance와 Q factor를 분석 하였으며, Q factor가 100이상인 high Q inductor도 구현하였다. 이렇게 구현된 내장형 수동소자는 기판의 크기의 감소와 제조 단가의 절감, 최소 크기의 기판을 구현하는데 응용이 가능 할 것으로 예상 된다.

• Korean Journal of Materials Research
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• v.25 no.6
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• pp.288-292
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• 2015

New lead-free piezoelectric ceramics $0.96[\{Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}\}_{1-x}La_x(Ti_{1-y}Nb_y)O_3]-0.04SrTiO_3$ (BNKT-ST-LN, where $x=y=0.00{\leq}(x=y){\leq}0.015)$ were synthesized using the conventional solid-state reaction method. Their crystal structure, microstructure, and electrical properties were investigated as a function of the La and Nb (LN) content. The X-ray diffraction patterns revealed the formation of a single-phase perovskite structure for all the LN-modified BNKT-ST ceramics in this study. The temperature dependence of the dielectric curves showed that the maximum dielectric constant temperature ($T_m$) shifted towards lower temperatures and the curves became more diffuse with an increasing LN content. At the optimum composition (LN 0.005), a maximum value of remnant polarization ($33C/cm^2$) with a relatively low coercive field (22 kV/cm) and high piezoelectric constant (215 pC/N) was observed. These results indicate that the LN co-modified BNKT-ST ceramic system is a promising candidate for lead-free piezoelectric materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.145-145
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.296.2-296.2
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• 2008