• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.817-820
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.

• Economic and Environmental Geology
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• v.12 no.2
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• pp.79-93
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• 1979

Twenty five samples of the scheelite-powellite series from twelve Korean tungsten deposits of various geologic settings were studied mineralogically and geochemically. Variations in the trace-element contents of the scheelite minerals are considered in relation to geologic settings and mineralogic properties. Scheelites from ore deposits developed in similar geologic settings and under similar physicochemical conditions are characterized by specific combinations of trace elements.

• Journal of the Mineralogical Society of Korea
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• v.14 no.1
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• pp.39-51
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• 2001

공주군 유구면 일대의 화강암질 편마암의 풍화작용에 따른 원소의 거동과 pH와 이차광물과의 관계를 XRF, ICP-AES, ICP-MS를 이용한 원소분석결과를 통하여 검토하였다. 이 지역의 암석은 pH6 내외의 산성환경, 침철석, 아나타제와 같은 다양한 이차광물을 생성하면서 심각한 화학조성의 변화를 초래했다. 주원소의 화학조성을 이용한 풍화지수는 토양층에서 79~88로 모암 중의 사장석이 용해되고 흑운모가 변질되어 캐올리광물의 생성이 활발한 방향으로 풍화작용이 진행되었다. 지표층으로 가면서 Al에 대한 주 원소의 거동은 Si, Ca, Na, K, P가 감소하고 Fe, Ti, Mn이 증가하는 경향을 보이며 pH가 낮은 풍화단면에서 주 원소의 변화량이 더 크다. 이 풍화대에서 Mg은 거의 일정하다. Li, As 모든 전이원소는 pH가 감소함에 따라 증가하며 특히 이들 원소는 Fe의 함량과 비례해서 증가해 침철석과 공침하였거나 표면에 흡착되어 있는 것으로 보인다. Ga은 Fe와 비례하기는 하지만 변화량은 전 풍화단면에서 일정하다. Zr, Mo, Sn, Cd은 pH에 변화에 상관없이 일정한 반면에 Rb, Sr, Ba, Y, Pb, Th, U 등은 감소하는 경향을 보인다. 특히 Rb 과 Sr은 Ca에 비례해서 감소한다. 희토류원소는 전 풍화단면에서 감소하는 경향을 보이는데 $Al_2$$O_3$에 대한 상대적인 변화량을 보면 경희토류원소는 사프롤라이트(saprolite)하부와 상부에서 부화되어 있고 중부 사프롤라이트와 토양층에서 감소하는 반면에 중희토류원소는 사프롤라이트 하부와 상부에서 감소하고 중부사프롤라이트 및 토양층에서 부화되는 경향을 보인다. 전반적으로 희토류원소의 원자번호가 클수록 손실율이 커진다. 이 풍화단면에서 원소의 거동은 각 풍화층의 pH와 생성된 이차광물의 조성에 지배를 받았다.

• Economic and Environmental Geology
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• v.31 no.3
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• pp.249-264
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• 1998

The Creataceous volcanic rocks distributed in the southeastern part (Kyeongsang basin) of Korea peninsula are composed of basalt, basaltic andesite, andesite, dacite and rhyolite. The variation of major elements show that contents of MgO, CaO, $FeO^T$, $Al_2O_3$, $TiO_2$ and $P_2O_5$ decrease with increasing of $SiO_2$, but $K_2O$ contents are increased slightly, $Na_2O$ widely dispersed. We can show slightly inflection point and low frequency of dacites in range between 63-65 wt.% $SiO_2$, while continuous trend exit in variation diagram. Variation trends in Harker diagrams for the major, minor, trace and REEs suggest that the BAV (basaltic to andesitic volcanics) and DRV (dacitic to rhyolitic volcanics) are not related to a simple crystal fractionation process. In the regime of under 65 wt. % in silica content, fractionation of olivine and clinopyroxene is predominant, while that of plagioclase happens strongly higher than 65 wt.% (e.g., $SiO_2$, vs. Eu and Sr, MgO vs. $Al_2O_3$ and CaO). The latter means low-pressure fractional crystallization for DRV. On the discriminant diagram, DRV are located in more mature environment than BAV. The $(Ce/Sm)_N$ vs. CeN digram shows that these two classes cannot be related to crystal fractionation. If they had been produced by fractionation, although they plotted in a slightly elongate cluster along the same horizontal trend, DRV should lie to the right of these primitive compositions. These diagrams clearly rule out a simple fractionation throughout from BAV to DRV. BAV had been influenced greatly subductiong slab as shown by K/Yb vs. Ta/Yb. We suggest that BAV primitive magma generated higher degree of partial melting than DRV primitive magma. LILE (K, Ba, $Rb{\pm}Th$) enriched characteristics as shown in BAV are inherited from subducting slab fluids and/or higher degree of partial melting of mantle material. However, lower degree of partial melting of mantle relative to BA V and contamination at high-level magma reservoir caused LILE enrichment to DRV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.581-584
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• 2002

In this work, a CPW resonator was designed and fabricated to investigate the basic microwave properties, such as effective dielectric constant, of BST thin films. Their properties were used as basic data to simulate and design CPW tunable bandpass filter. We also report on gold/$Ba_{0.5}Sr_{0.5}TiO_3$(BST) ferroelectric thin film C-band tunable bandpass filters(BPFs) designed and fabricated on magnesium oxide substrates using CPW structure. The 2 pole filter was designed for a center frequency of 5.88 GHz with a bandwidth of 9 %. The BST based CPW filter offers a high sensitivity parameter as well as a low loss parameter. The tuning range for the bandpass filter with CPW structure was determined to be 170 MHz.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.167-167
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• 2008

The barium strontium calcium titanate powders were prepared by sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. And we investigated the structural and dielectric properties of BSCT thick films with the variation of sintering temperature. As a result of thermal analysis, BSCT polycrystalline perovskite phase was formed at around $660^{\circ}C$. The results of X-ray diffraction analysis were showed a cubic perovskite structure without presence of the second phase in all BSCT thick films. The average grain size and the thickness of the specimen sintered at $1450^{\circ}C$ were about 1.6 mm and 45 mm, respectively. The relative dielectric constant increased and the dielectric loss decreased with increasing the sintering temperature, the values of the BSCT thick films sintered at $1450^{\circ}C$ were 5641 and 0.4% at 1kHz, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.400-403
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• 2003

Etching characteristics of (Pb,Sr)$TiO_3$(PST) thin films were investigated using inductively coupled chlorine based plasma system as functions of gas mixing ratio, RF power and DC bias voltage. It was found that increasing of Ar content in gas mixture lead to sufficient increasing of etch rate and selectivity of PST to Pt. The maximum etch rate of PST film is $562\;{\AA}$/min and the selectivity of PST film to Pt is 0.8 at $Cl_2/(Cl_2+Ar)$ of 20 %. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Progress in Superconductivity
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• v.1 no.1
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• pp.20-25
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• 1999

We constructed a high-$T_c$ scanning SQUID microscope (SSM) operating in the liquid nitrogen. We used a washer-type YBCO SQUID with inner and outer dimensions of $12{\mu}m$ and $36{\mu}m$, respectively, which was grown on the $SrTiO^3$ bicrystal substrate. The sample, rather than SQUID, was scanned using two stepping motors. We also developed readout electronics, stepping motor controller, and the software for system control and data display. We took images of various samples using our SSM and found that the spatial resolution is about $40{\mu}m$ and noise level is lower than $10^{-7}T/{\surd}Hz$ at 100 Hz and higher at lower frequencies. The noise level was much higher than that of a typical SQUID due to the other coupling from the electric parts. We present a simple argument on the inductive coupling between the sample and the SQUID which should be under-stood for the proper interpretation of the obtained images. By comparing the measured data with the simulation results the gap between the SQUID and the sample is estimated to be $40{\mu}m$.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.109-112
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• 2003

The high temperature superconducting YBCO films were deposited on the SrTiO$_3$(100) single crystals to find out the proper deposition conditions of YBCO on biaxially-textured metal substrates. Different sets of the substrate temperature, oxygen partial pressure and laser fluence were used to investigate the effect of deposition conditions on the superconducting properties. The new apparatuses for measuring critical temperature (Tc) and critical current (Ic) were designed and manufactured, which were used to obtain Tc's and Ic's of the deposited films. The accuracy of the new apparatus was confirmed by comparing the results with those from SQUID magnetometer. The results on the YBCO films deposited on single crystal substrates which will be used to get the optimum deposition conditions of YBCO films in the coated conductor, are summarized in this report.