• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.680-689
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• 1996

SrCaCuO와 BiPbCuO 화합물로 이루어진 이중층시료가 만들어 졌으며, 소결과정에서 나타나는 확산과 입자간의 상호작용으로 108K의 임계온도를 나타내었다. 이 시료는 820.deg. C에서 0-210 시간동안 소결되었다. 초전도체의 생성, 성장메카니즘과 임계온도의 관계가 연구되었으며, 최적조건은 820.deg. C에서 210시간 소결하고 SrCaCuO와 BiPbCuO의 도포비가 1:0.6인 시편에서 나타났다. 또한 이중층시료에서 가장 좋은 조성비는 S $r_{2}$C $a_{2}$C $u_{2}$ $O_{x}$와 B $i_{1.9}$P $b_{0.5}$C $u_{3}$ $O_{y}$ 이었다.다.

• Progress in Superconductivity
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• v.2 no.2
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• pp.65-70
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• 2001

$Pb/Bi_2Sr_2CaCu_2O_{8+\delta}$-single-crystal junctions with the tunneling direction along the c axis of the crystal were fabricated to obtain an s-wave-superconductor/d-wave-superconductor Josephson junctions. The tunneling R (T) curves and current-voltage characteristics show distinct features which can be explained only under the assumption that the order parameter of high-$T_c/Bi_2Sr_2CaCu_2O_{8+{\delta}}$ superconductors has a pure d-wave symmetry, which is in contrast to the case of $YBa_2Cu_3O_{7+{\delta$}}$erconductors where a minor s-wave component is also present..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.302-302
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• 2007

The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

• Korean Chemical Engineering Research
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• v.44 no.3
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• pp.284-288
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• 2006

$(Ca,Sr)_{2-y}MgSi_2O_7:Eu^{2+}{_y}$ (CMS) phosphor particles were prepared by using a spray pyrolysis process. The luminescent property was optimized by changing the content of Eu and the post-treatment temperature. The luminescence characteristics were also monitored with changing the ratio of Ca to Sr. The pure tetragonal $Ca_2MgSi_2O_7$ or $Sr_2MgSi_2O_7$ particles were obtained when the post-treatment temperature was over $1,000^{\circ}C$. The highest emission intensity of CMS particles were achieved when the concentration (y) of Eu and the treatment temperature were 0.05 and $1,250^{\circ}C$,respectively. The emission wavelength $({\lambda}_{max})$ of ${(Ca_{1-x},Sr_x)}_{1.95}MgSi_2O_7:{Eu^{2+}}_{0.05}$ was gradually shifted from 524 nm to 456 nm with increasing the content of Sr due to the reduction of crystal field strength. The emission intensity and its width of $Sr_2MgSi_2O_7:Eu$ was greatly enhanced by substituting Ca of less than 10 mol％ for Sr without any significant peak shift. The morphology of as-prepared particles was spherical, but changed to irregular-shaped one after the post treatment at the temperature range from 900 at $1,300^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.28 no.4
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.

• Analytical Science and Technology
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• v.6 no.2
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• pp.239-246
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• 1993

The structure of $(BaSr)TiO_3$ thin film deposited on ITO coated glass, bare glass and (100) Si substrates was not changed, but the crystallinity was improved by the polycrystalline ITO layer and (100) Si substrate. The composition of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was nearly stoichiometric ((Ba+Sr)/Ti=1.08~1.09) and very uniform through all deposition process. But as the deposition temperature increases, the interdiffusion between grown thin film and ITO layer and between ITO layer and base glass is severer. $(BaSr)TiO_3$ thin film deposited on ITO coated glass substrate was highly transparent. The refractive index($n_f$) of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was 2.138~2.286 as a function of substrate temperature.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.453-460
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• 1997

Sr-ferrite having magnetoplumbite structure is similar to Ba-ferrite in magnetic characteristics, but better magnetic characteristics for using motor application. To improve remanence magnetic flux density(Br) and coercive force(iHc), it is necessary that sintered ferrites must have high density and grain size less than 1 $\mu$m. By varying n values in SrO.nFe2O3 basic composition, calcination temperature, and BaO addition, Sr-ferrite powder and sintered specimen was prepared. The n values, calcination temperature, and BaO addition affected secondary phase formation, particle size, and particle shape. BaO addition enhanced Fe2O3 secondary phase and hexagonal shape particle. Fe2O3 phase reduced sintered density which greatly decreased Br.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.294-298
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• 2000

The $MgTiO_3\; and \;$0.9MgTiO_3-0.1SrTiO_3$ ceramics were fabricated by the conventional mixed-oxide method. The sintering temperature and time were $1300^{\circ}C~1600^{\circ}C$, 2hr., respectively. The structural and microwave dielectric properties were investigated with sintering temperature and the application for the satellite communication microwave dielectric resonator was investigated. The coexistence of cubic $SrTiO_3$ and hexagonal TEX>$MgTiO_3$ structures in $0.9MgTiO_3-0.1SrTiO_3$ ceramics were found from X-ray diffraction patterns. In the case of $MgTiO_3$ ceramics, sphere phase and needle-like phase were coexisted. The $0.9MgTiO_3-0.1SrTiO_3$ ceramics observed sphere phase. The dielectric constants and temperature coefficient of resonant $frequency(\tauf)$ were increased with addition of $SrTiO_3$ but the quality factor was decreased. The dielectric constant, quality factor and $\tau$f of the;$0.9MgTiO_3-0.1SrTiO_3$ ceramics were 22.61, 10.928(at 1GHz) and $+50.26ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.454-457
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• 2010

The influence of CuO addition on what of the $(Ba,Sr)TiO_3$ ceramics was studied. The sintering temperature of $(Ba,Sr)TiO_3$ ceramics was lowered by the addition of CuO additives. The 1 - 5 wt% CuO were selected and employed as the sintering aids. Low-Temperature Co-fired Ceramic technologies are popular technologies used in the manufacture of microwave devices. In this study, crystalline and electrical properties of CuO doped $(Ba,Sr)TiO_3$ ceramics were investigated to determine the low temperature sintering properties. The addition of CuO to $(Ba,Sr)TiO_3$ lowered the sintering temperature from $1350^{\circ}C$ to $1150^{\circ}C$. The dependence of the sintering temperature shrinkage rate and mechanism of CuO doped $(Ba,Sr)TiO_3$ ceramics are investigated and discussed. Also, the crystalline structure of CuO - doped $(Ba,Sr)TiO_3$ ceramics is discussed by the X-ray diffraction (XRD) method.