• 한국세라믹학회지
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• 제32권5호
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• pp.582-586
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• 1995

The crystal structures of (Na0.3Sr0.7)(Ti0.7M0.3)O3 (M=Ta, Nb) compounds were determined using the Rietveld method. Due to the tilting of a oxygen octahedron, (Na0.3Sr0.7)(Ti0.7Nb0.3)O3 had a superlattice of doubled a, b and c of simple perovskite. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was tetragonal with a space group 14/mmm. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was a cubic with space group Pm3m, in which no tilting of oxygen octahedron was observed. The difference in the oxygen tilting of these two materials was due to the larger covalency of Nb-O bond than that of Ta-O bond, which induced a strong $\pi$Nb0 bonding in (Na0.3Sr0.7)(Ti0.7M0.3)O3. Therefore, the higher transition temperature of (Na0.3Sr0.7)(Ti0.7M0.3)O3 could be related to the larger tilting of oxygen octahedron.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2004년도 춘계총회 및 연구발표회 초록집
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• pp.36.2-36.2
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• 2004

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.74-74
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• 1999

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• 센서학회지
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• 제18권1호
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• pp.48-53
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• 2009

$Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

• 한국세라믹학회지
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• 제41권5호
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• pp.401-405
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• 2004

순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스와 도너와 억셉터가 치환된 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 와 SrB $i_2$(T $a_{0.99}$ $Ti_{0.01}$)$_2$ $O_{8.99}$ 세라믹스를 제조하고 미세구조, 강유전 P-E 이력특성, 상전이 온도를 조사하였다. 입자크기는 SrB $i_2$T $a_2$$O_{9}$ 세라믹스의 강유전 이력곡선에는 영향을 주지 않았다. 도너를 치환한 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 세라믹스는 순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스보다 잔류 분극이 크고 더욱 포화된 강유전 P-E 이력곡선을 보였으며, 억셉터가 치환된 SrB $i_2$(T $a_{0.99}$ $Ti_{0.01}$)$_2$ $O_{8.99}$ 세라믹스는 잔류분극이 크게 감소하여 가운데가 잘록한 모양을 보였다. 도너가 치환된 S $r_{0.99}$B $i_2$(T $a_{0.99}$ $W_{0.01}$)$_2$$O_{9}$ 세라믹스의 강유전 분극이 순수한 SrB $i_2$T $a_2$$O_{9}$ 세라믹스보다 더 큰 것은 Sr 공공의 생성에 의하여 분역벽 이동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.동이 용이해졌기 때문이다.

• Journal of Magnetics
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• 제18권1호
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• pp.39-42
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• 2013

We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

• 대한전자공학회논문지SD
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• 제37권11호
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• pp.18-24
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• 2000

(Ba,Sr)$TiO_3$ 박막은 ULSI-DRAM 즉 1-4 Gbit급 DRAM용 셀(cell) 커패시터의 새로운 유전물질로 각광받고 있다. 본 연구에서는 ICP 장비에서 $BCl_3/Cl_2/Ar$ 플라즈마로 (Ba,Sr)$TiO_3$ 박막을 식각하였다. 이때 RF power/dc bias voltage는 600W/-250V, 반응로의 압력은 10mTorr 이었다. $Cl_2/(Cl_2+Ar)$은 0.2로 고정하였고, $BCl_3$ 가스를 첨가하면서 (Ba,Sr)$TiO_3$ 박막을 식각하였다. $BCl_3$ 가스를 10% 첨가하였을 때, $480{\AA}/min$으로 (Ba,Sr)$TiO_3$ 박막은 가장 높은 식각 속도를 나타내었다. $Cl_2/Ar$가스에 $BCl_3$의 첨가 비에 따른 Cl, BCl 및 B의 라디칼 밀도를 optical emission spectroscopy(OES)에 의해 구하였다. $BCl_3$를 10% 첨가하였을 때 Cl의 라디칼 밀도가 가장 높았다. (Ba,Sr)$TiO_3$ 박막의 표면반응을 규명하기 위하여 XPS 분석을 수행한 결과 이온 bombardment 식각이 Ba-O 결합을 파괴하고 Ba와 Cl의 결합형태인 $BaCl_2$을 제거하기 위하여 필요하다. Sr과 Cl의 결합의 양은 많지 않고, Sr은 주로 물리적인 스퍼터링에 의하여 제거된다. Ti와 Cl은 화학적으로 반응하여 $TiCl_4$ 결합형태로 용이하게 제거된다. 식각후 단면사진을 SEM을 통해 본 결과 식각단면이 약 65~70$^{\circ}$ 정도였다.

• 한국세라믹학회지
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• 제35권8호
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• pp.819-826
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• 1998

• 한국세라믹학회지
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• 제37권6호
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• pp.612-616
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• 2000

The effect of Co dopant on the (La, Sr)MnO3 cathode was investigated. La2Zr2O7 and SrZrO3 were formed as the reaction products between YSZ and LSMC. The reactivity of LSMC with YSZ increased with increasing Co content. However, the cathodic polarization resistance decreased with increasing Co doping. Therefore, doping Co at Mn site in the (La, Sr)MnO3 cathode was effective on controlling the polarization resistance of the cathode. The polarization property of LSMC-YSZ composite(60 wt%: 40 wt%) cathode was better than that of LSMC single cathode.