• Title/Summary/Keyword: SrBi$_2$Ta$_2$O$_{9}$, Etch rate

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Etching Kinetics Of $SrBi_2Ta_2O_{9}$ Thin Film in $Cl_{2}$/$CF_{4}$/Ar gas Chemistry ($Cl_{2}$/$CF_{4}$/Ar gas chemistry에 의한 $SrBi_2Ta_2O_{9}$ 박막의 식각 특성)

  • 김동표;김창일;이원재;유병곤;김태형;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.62-65
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    • 2001
  • $SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.

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Etching Characteristics of $SrBi_{2}Ta_{2}O_{9}$ Thin Film with Adding $Cl_2$ into $CF_4$/Ar Plasma ($CF_4$/Ar 플라즈마 내 $Cl_2$첨가에 의한 $SrBi_{2}Ta_{2}O_{9}$ 박막의 식각 특성)

  • 김동표;김창일;이원재;유병곤;김태형;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.9
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    • pp.714-719
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    • 2001
  • SrBi$_2$Ta$_2$$O_{9}$ thn films were etched in inductively coupled Cl$_2$/CF$_4$/Ar plasma. THe maximum etch rate was 1060 $\AA$/min at a Cl$_2$/(Cl$_2$+CF$_4$+Ar)=0.2. The 20% additive Cl$_2$ into CF$_4$/Ar plasma decreased carbon and fluorine radicals, but increased Cl radicals. Sr was effectively removed by reacting with Cl radical because the boiling point of SrCl$_2$(125$0^{\circ}C$) is lower than that of SrF$_2$(246$0^{\circ}C$). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching profile was evaluated by using scanning electron microscopy.y.

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Physical and Electrical Characteristics of SrBi$_2$Ta$_2$O$_9$ thin Films Etched with Inductively Coupled Plasma Reactive Ion Etching System (유도결합형 플라즈마 반응성 이온식각 장치를 이용한 SrBi$_2$Ta$_2$O$_9$ 박막의 물리적, 전기적 특성)

  • 권영석;심선일;김익수;김성일;김용태;김병호;최인훈
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.4
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    • pp.11-16
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    • 2002
  • In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.

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Etching characteristic of SBT thin film by using Ar/$CHF_3$ Plasma (Ar/$CHF_3$ 플라즈마를 이용한 SBT 박막에 대한 식각특성 연구)

  • 서정우;이원재;유병곤;장의구;김창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.41-43
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    • 1999
  • Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

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The Study of Etching Mechanism in $SrBi_2Ta_2O_9$ thin film by Optical Emission Spectroscopy (OES 를 이용한 SBT 박막의 식각 메카니즘 연구)

  • 신성욱;김창일;장의구;이원재;유병곤;김태형
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.40-44
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    • 2000
  • In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

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The Study Of Etching Mechanism in $SrBi_{2}Ta_{2}O_{9}$ thin film by Optical Emission Spectroscopy (OES를 이용한 SBT 박막의 식각 메카니즘 연구)

  • 신성욱;김창일;장의구;이원재;유병곤;김태형
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.40-44
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    • 2000
  • In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

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The Study of Etching Characteristic in $SrBi_2$$Ta_2$$O_9$ Thin Film by Optical Emission Spectroscopy (OES를 이용한 SBT 박막의 식각 특성 연구)

  • 신성욱;김창일;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.185-189
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    • 2001
  • In this paper, since the research on the etching of SrBi$_2$Ta$_2$$O_{9}$(SBT) thin film was few (specially Cl$_2$-base) we had studied the surface reaction of SBT thin films. We have used the OES(optical emission spectroscopy) in high density plasma etching as a function of RF power, dc bias voltage, and Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction. The change of Cl radical density that was measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhanced to increase the etch rates SBT thin films. These results were confirmed by XPS(x-ray photoelectron spectroscopy) analysis.s.

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Study on mechanism for etching of $SrBi_{2}Ta_{2}O_{9}$ thin film in $SF_6$/Ar gas plasma ($SF_6$/Ar 가스 플라즈마에 의한 $SrBi_{2}Ta_{2}O_{9}$ 박막의 식각 메커니즘 연구)

  • Kim, Dong-Pyo;Seo, Jung-Woo;Kim, Chang-Il
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.867-869
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    • 1999
  • In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.

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Etching Characteristics of $SrBi_2Ta_2O_9$ Thin Film with adding $Cl_2$ into $CF_4/Ar$ plasma ($CF_4/Ar$ 플라즈마 내 $Cl_2$첨가에 의한 $SrBi_2Ta_2O_9$ 박막의 식각 특성)

  • Kim, Dong-Pyo;Kim, Chang-Il;Lee, Won-Jae;Yu, Byung-Gon;Kim, Tae-Hyung;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.67-70
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    • 2001
  • $SrBi_2Ta_2O_9$ thin films were etched at high-density $Cl_2/CF_4/Ar$ in inductively coupled plasma system. The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching of SBT thin films in $Cl_2/CF_4/Ar$ were chemically assisted reactive ion etching. The maximum etch rate was 1060 Am /min in $Cl_2$(20)/CF_4(20)/Ar(80). The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase CI radical. The etch profile of SBT thin films in $Cl_2/CF_4/Ar$ plasma is steeper than in $CF_4$/Ar plasma.Ā저會Ā저ﶖ⨀⡌ឫഀĀ᐀會Ā᐀㡆ﶖ⨀쁌ឫഀĀ᐀會Ā᐀遆ﶖ⨀郞ග堂瀀ꀏ會Āﶖ⨀〲岒ऀĀ᐀會Ā᐀䁇ﶖ⨀젲岒Ā㰀會Ā㰀顇ﶖ⨀끩Ā㈀會Ā㈀ﶖ⨀䡪Ā᐀會Ā᐀䡈ﶖ⨀Ā᐀會Ā᐀ꁈﶖ⨀硫Ā저會Ā저ﶖ⨀샟ගကĀ저會Ā저偉ﶖ⨀栰岒ఀĀ저會Ā저ꡉﶖ⨀1岒Ā저會Ā저Jﶖ⨀惝ග؀Ā؀會Ā؀塊ﶖ⨀ග㼀Ā切會Ā切끊ﶖ⨀⣟ගఀĀ搀會Ā搀ࡋﶖ⨀큭킢Ā저會Ā저

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A study on etching mechanism of SBT thin flim by using Ar/$CHF_3$plasma (Ar/$CHF_34$플라즈마를 이용한 SBT 박막에 대한 식각 메카니즘 연구)

  • 서정우;장의구;김창일;이원재;유병곤
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.3
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    • pp.183-187
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    • 2000
  • In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

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