• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.432-435
• /
• 1997

In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2009년도 추계학술대회
• /
• pp.428-430
• /
• 2009

본 논문은 RF 마그네트론 스퍼터링 시스템을 이용하여 p-Si (100) 기판위에 증착된 C축 배향을 가지는 ZnO 박막의 특성을 분석하고 있다. 증착 전력, 공정 압력, 반응가스로 사용된 산소 가스의 비율과 같은 증착 조건들을 변화시켰을 때, ZnO 박막의 결정구조의 변화를 분석한다. 증착된 ZnO 박막의 결정 구조는 주사 전자 현미경(scanning electron microscope, SEM)을 이용하여 조사되었다. 분석 결과 증착 파라미터들은 증착된 ZnO 박막의 결정(grain) 크기와 배향 특성에 강한 영향을 미친다는 사실을 알 수 있다.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
• /
• pp.106-109
• /
• 2005

The ITO thin films for Top-Emitting Organic Light Emitting Devices (TOLEDs) were prepared on cell(LiF/Organic Layer/Bottom Electrode : ITO ) by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying gas pressure, input current and distance of target to target($D_{T-T}$). As a function of sputtering conditions, I-V characteristics of prepared ITO thin films on cell were measured by 4156A (HP). In the results, when the In thin films were deposited at $D_{T-T}$ 70mm and working pressure 1mTorr, the leakage current of ITO/cell was about 11[V] and 5E-6[$mA/cm^2$].

• 한국재료학회지
• /
• 제15권10호
• /
• pp.621-625
• /
• 2005

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.

• 한국재료학회지
• /
• 제28권3호
• /
• pp.159-165
• /
• 2018

In order to increase the efficiency of the sputtering method widely used in thin film fabrication, a dc sputtering apparatus which supplies both high frequency and magnetic field from the outside was fabricated, and cobalt thin film was fabricated using this apparatus. The apparatus can independently control the applied voltage, the target-substrate distance, and the target current, which are important parameters in the sputtering method, so that a stable glow discharge is obtained even at a low gas pressure of $10^{-3}$ Torr. The fabrication conditions using the sputtering method were mainly performed in $Ar+O_2$ mixed gas containing about 0.6 % oxygen gas under various Ar gas pressures of 1 to 30 mTorr. The microstructure of Co thin films deposited using this apparatus was examined by electron diffraction pattern and X-ray techniques. The magnetic properties were investigated by measuring the magnetization curves. The microstructure and magnetic properties of Co thin films depend on the discharge gas pressure. The thin film fabricated at high gas pressure showed a columnar structure containing a large amount of the third phase in the boundary region and the thin film formed at low gas pressure showed little or no columnar structure. The coercivity in the plane was slightly larger than that in the latter case.

• Progress in Superconductivity
• /
• 제4권2호
• /
• pp.153-156
• /
• 2003

We have studied fabrication of $MgB_2$ thin film on $SrTiO_3$ (001) and r-cut $A1_2$$O_3$ substrates by rf magnetron sputtering method using and $ MgB_2$ single target and two targets of Mg and B, respectively. Based on P -T phase diagram of $MgB_2$ and vapor pressure curves of Mg and B, a three-step process was employed. B layer was deposited at the bottom to enhance the film adhesion to the substrate. Secondly, co-sputtering of Mg and B was done. Finally, Mg was sputtered on top to compensate fur the loss of Mg during annealing. Subsequently, $MgB_2$ films were in-situ annealed in various conditions. The sample fabricated using the three-step process showed $T_{c}$ of 24 K and formation of superconducting $MgB_2$ phase was confirmed by XRD spectra. In case of co-sputtering deposition, $T_{c}$ depended on annealing time and argon pressure. However, those made by single-target sputtering showed non-superconducting behavior or low transition temperature, at best.est.

• 한국진공학회지
• /
• 제7권3호
• /
• pp.255-260
• /
• 1998

Ionized magnetron sputtering은 high density plasma를 사용하여 스퍼터된 입자의 이온화율을 기판에서의 플럭스 기준으로 80%이상까지 증대시킬 수 있는 방법으로 반도체 소자의 아주 작은 홀이나 via contact등을 채울 수 있는 아주 유용한 수단이나 가스의 압력 이 30mTorr 이상으로 상당히 높아야만 이온화율이 높게 유지되어 스퍼터 증착 속도가 느려 지고 중성입자의 각도 분포가 넓어지는 단점이 있다. 그 원인이 스퍼터된 입자들에 의한 전 자 온도의 급격한 감소와 타겟 주변에서의 가스 희귀화 현상에 있다고 보고 이를 보완하고 자 스퍼터 전력을 펄스화 하는 방법을 고안하여 실험하였다. 그 결과 펄스의 on/off time이 10ms/10ms, 100ms/100ms에서 가장 높은 이온화율을 가시광 분광 결과에서 보였으며 실제 로 Ag의 XRD결과 (111)에서 (200)으로 우선 방위의 현격한 변화가 관찰되었다. 이를 고전 력 스퍼터링에 의한 중성 가스 가열과 냉각의 측면에서 해석하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.1477-1479
• /
• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical, optical characteristics and surface roughness of prepared ITO thin films were measured. In the results, as increasing $O_2$ gas 0.1[sccm] to 0.7[sccm], resistivity of ITO thin film was increased with a decreasing carrier concentration, $O_2$ gas over 0.3[sccm] the carrier mobility have a similarly value. Transmittance of prepared ITO thin films were improved at increasing $O_2$ gas 0.1[sccm] to 0.7[sccm]. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity $6.19{\times}10^{-4}[{\omega}{\cdot}cm]$, carrier mobility $22.9[cm^2/V{\cdot}sec]$, carrier concentration $4.41{\times}10^{20}[cm^{-3}]$ and transmittance over 80% of ITO thin film prepared at working pressure 1mTorr, input current 0.4A without any substrate heating.

• 한국표면공학회지
• /
• 제29권6호
• /
• pp.829-833
• /
• 1996

Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

• 한국세라믹학회지
• /
• 제34권8호
• /
• pp.908-913
• /
• 1997

Multilayer NbCxC1-x/Y2O3/Ti were sputter-coated on the alumina substrate, starting with a 0.7 ㎛ thick NbCxC1-x layer grown on substrate, followed by 0.7 ㎛ thick Y2O3 layer and 1 ㎛ thick Ti layer. To find out the optimum conditions for thickness uniformity and adhesion, sputtering works have been done with the variation of sputtering power and Ar pressure. After vacuum annealing at 950℃ and 1000℃, the thermal stability of the NbCxC1-x/Y2O3/Ti coated alumina substrates has been investigated by peel off test. The coating scheme didn't cause any debonded layer after an annealing at 950℃ for 3hrs. However, it was peeled off after annealing at 1000℃ for 3hr. It was found that the thermal stability of Al2O3/NbCxC1-x/Y2O3/Ti coating scheme changed with the NbCxC1-x composition.