• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.84-89
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• 1996

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.772-775
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• 2009

Indium tin oxide(ITO) thin film was deposited at room temperature on polycarbonate(PC) substrate by in-line sputter system. ITO sputtering process was carried out at a various pressure for the reduction of ion damage on PC substrate and the electrical and the optical properties of deposited ITO films were obtained and analyzed. From the experimental results, the sheet resistances of as-deposited ITO films varied with a different pressure and the optical transmittances at visible wavelength were maintained above 85%. The results are considered to be related to the pressure of oxygen atoms as a reaction gas.

• Journal of Information Display
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• v.9 no.4
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• pp.15-20
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• 2008

A DC-magnetron inline sputter was established, and the influence of the base pressure on the structural characteristics of the ITO thin films was studied. When the inline sputter system was established and operated for ITO sputtering, its initial vacuum level did not go below $5\times10^{-6}$ torr. The vacuum leak test was conducted by measuring t he elapsed time until the vacuum level reached $1\times10^{-6}$ torr. The base pressure was successfully maintained at $1\times10^{-6}$ torr for 900 min, and the uniformity of the ITO film that had been deposited at this pressure significantly improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• Journal of Surface Science and Engineering
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• v.33 no.5
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• pp.349-355
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• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.518-523
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• 2002

The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.341.2-341.2
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• 2014

산화물 반도체는 가시광선 영역인 380~780 nm 부근에서의 투과율이 80% 이상이고, 3.2 eV 이상의 band gap과 높은 mobility를 가지는 물질로서 투명한 스마트 창호필름이나 디스플레이에 유망한 물질로 연구되고 있다. 본 연구에서는 스마트 윈도우에 적용되는 높은 가시광 투과율과 적외선 차단을 위한 필름개발을 목적으로 산화물 반도체인 $TiO_2$ 물질을 RF Sputter를 이용하여 상온에서 박막성장을 하였다. Glass와 PET 위에 동시에 성장시켜 각각의 기판에 성장된 $TiO_2$ 박막의 물리적인 성질 등을 조사하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다. 100Watt 부터 RF power를 높여가며 Working Pressure 변화변 주었을 때 낮은 RF power와 Working Pressure에서 높은 가시광 투과율을 확인 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.154.1-154.1
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• 2014

Indium gallium zinc oxide (IGZO)는 차세대 디스플레이 평판 패널에 사용되는 반도체 화합물의 일종으로 최근 주목받고 있는 물질의 하나이다. 기존의 IGZO를 사용하여 박막을 증착한 뒤 표면 처리를 통해 박막의 특성 변화에 대한 연구들이 진행되어 왔으며, 기존의 연구들은 plasma 환경에 노출을 시켜 간접적인 plasma treatment를 통해 박막의 특성을 향상시켜 왔다. 본 연구에서는 기존의 plasma treatment에서 발견된 방식인 ion beam treatment를 통해 플라즈마를 직접적으로 표면에 조사하여 박막의 특성 변화를 알아보았다. 한국표준과학연구원에서 자체 제작한 chamber를 이용하여 RF sputter로 Si wafer 위에 IGZO 박막을 증착하고 수소 ion beam treatment를 한 뒤, SEM과 XPS를 사용하여 박막 표면의 물성 변화를 분석하였다. 실험에 사용된 chamber에는 sputter gun과 ion beam이 함께 장착되어 있으며, scroll pump와 TMP를 사용하여 pressure를 유지하였다. 실험 시 base pressure는 $1.4{\times}10^{-6}Torr$였다. RF power 150 W. ion beam power 2,000 V에서 실험을 진행하였다.