• 전자공학회논문지D
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• 제35D권12호
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• pp.59-67
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• 1998

본 논문에서는 몬테카를로 방식을 사용하여 이온의 에너지에 대한 타겟 원자의 스퍼터율(Sputter Yield), 이온의 주입 각도에 대한 스퍼터율, 이온의 주입에 따른 타겟 원자의 발산 분포를 3차원으로 시뮬레이션 하였다. 중(중)이온으로 (Ar/sup +/)을 사용하였고, 경(輕)이온으로 (H/sup +/)을 사용하여 10 eV에서 100 KeV 영역의 에너지에 따른 스퍼터율을 계산하였다. 또한, 스퍼터 타겟 물질로서 Cu, Al을 사용하여 계산하였고, 실험치와 일치함을 확인하였다. 스퍼터율은 입사 이온의 에너지가 증가함에 따라 증가하는 경향을 보이지만, 임계점 이후에는 점차적으로 감소하는 경향을 보였다. 중이온에 의한 스퍼터에서는 임계점이 10 KeV 영역이었고, 경이온에 의한 스퍼터에서는 1 KeV 이하 영역이었다. 또한, 이온의 주입 각도에 따라서 타겟의 스퍼터율은 점차적으로 증가하였고, 68° 부근에서 최대 스퍼터율을 기록하였다. 이온의 주입 각도에 따른 타겟 원자의 분포도에서는 각도가 커짐에 따라서 타겟 표면 법선 방향으로 방출되는 원자의 수가 많아짐을 확인하였다. 본 연구에서는, CRAY T3E 슈퍼컴퓨터에서 시뮬레이션을 수행하였으며, 구현된 몬테카를로 스퍼터 시뮬레이터의 GUI(Graphic User Interface) 환경을 구축하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.329-329
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• 2011

We measured thin films thickness sputtered from Cu target in the magnetron sputter system. Thin films thickness is thin as integration power in target is large. Cu thin films thickness in 100 kWh integration watt was decreased by 20% when that of beginning was compared. But the shape of thin films thickness distribution was same. For the calculation of thin films thickness distribution in the 100 kWh, the angular distribution data sputtered of Cu particles is necessary when Ar ions enter to inclined erosion surface of Cu target. We used the relation results of sputter yield and main angular distribution of sputtering particles emitted from Cu target published by G. Betz.

• 대한기계학회논문집
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• 제14권3호
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• pp.747-754
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• 1990

본 연구에서는 장시간 가공하는 경우 가공량과 가공물에 입사되는 이온 빔의 입사각도에 따라 이온 스파터 가공이 표면거칠기에 미치는 영향에 대해서 연구해 보았 다.

• 한국생산제조학회지
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• 제24권4호
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• pp.400-406
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• 2015

This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국진공학회지
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• 제12권S1호
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• pp.92-94
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• 2003

The sputtering yield change of an amorphous Si layer on Si(100) was measured quantitatively for 0.5 keV $O_2^{+}$ and $Ar^{+}$ ion bombardment with in suit MEIS. In the case of 0.5 keV $O_2^{+}$ ion bombardment, at the initial stage of sputtering before surface oxidation, the sputtering yield of Si was 1.4 (Si atoms/$O_2^{+}$) and then decreased down to 0.06 at the ion dose of $3\times10^{16}O_2\;^{+}\textrm{/cm}^2$. In the case of 0.5 keV $Ar^{+}$ ion bombardment, the sputtering yield of Si for the surface normal incidence was 0.56 at the ion dose of 2.5 ${\times}$ 10$^{15}$ $Ar^{+}\textrm{cm}^2$, and rapidly saturated to 1.2 at dose of $7.5\times10^{15}Ar^+\textrm{cm}^2$. For the incidence angle of 80 from surface normal, the sputtering yield of Si was saturated to about 1.4 at the initial stage of sputtering. The surface transient effects, caused by change in sputtering yield at the initial stage of sputtering can be negligible when 0.5 keV $Ar^{+}$ ion at extremely grazing angle was used for sputter depth profiling.g.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.269-269
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• 2007

최근 평판디스플레이 산업이 성장함에 따라 품질향상을 위한 연구가 활발히 진행중이며 또한, 부품 소재 개발에 박차를 가하고 있다. 대형 평판디스플레이 중 낮은 전력소모와 광시야각이 우수한 TFT-LCD가 각광받고 있다. TFT-LCD 소자의 투명전극으로 사용되기 위해서는 면저항 10~1k Ohm/sq., 광투과율 85% 이상의 특성이 요구되며 ITO(Indium Tin Oxide의 약자) 타겟을 스퍼터링한 박막이 일반적으로 사용되고 있다. 본 연구에서는 $In_2O_3$ 나노 분말 제조 공법으로 제작된 ITO 타겟을 사용하여 양산성 및 대형화에 적합한 DC 마그네트론 스퍼터 방식으로 투명전극을 제조하였다. 일반적으로 사용되는 고정식 DC 마그네트론 스퍼터 방식은 타겟표면에 재증착(back deposition)되는 저급산화물로 인해 이물 또는 노즐(Nodule) 이 형성되고 이로 인해 비이상적이고 불안정한 방전 플라즈마가 박막의 특성을 저하시킨다. 이러한 문제점을 해결하기 위해 이동식 DC 마그네트론 스퍼터 방식을 채택하였으며 대형 타겟을 이용한 대형화 기판 제작과 안정적인 sputter yield로 인해 uniformity가 우수한 ITO 박막을 제조하였다. ITO 박막의 저면저항 고투과율 특성을 구현하기 위해 공정변수인 산소분압, 전류밀도(DC power) 그리고 증착온도에 따른 ITO 박막의 미세조직과 결정성을 관찰하였으며 전기적 특성을 분석하였다.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• 한국세라믹학회지
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• 제46권1호
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• pp.10-15
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• 2009

We have fabricated silicon-rich silica thin films via RF magnetron sputtering using a SiO target. Thickness evolution and microstructure change of such $SiO_x$ (1$SiO_x$ thin films turned out to be mainly responsible for the increase of refractive index.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.33-36
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• 1996

AIN thin films were prepared using by Rf sputtering method on the GaAs(170) substrate and investigated by X-ray diffractometer, IR spectroscopy, n&k system. The parameters were the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio. The AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. The crystallinity of the films, which were grown respectively under the different conditions, were determined by the comparison of the band width of an E$_1$[TO:680$cm^{-1}$ /] phonon mode. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.% according to the increment of the $N_2$/Ar ratio by which the sputter yield got lower.