• Journal of Magnetics
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• v.12 no.2
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• pp.53-58
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• 2007

Theory of the generation linewidth of a current-driven spin-torque magnetic nano-oscillator in the presence of thermal fluctuations has been developed and a simple analytical formula for the generation linewidth in the supercritical regime of generation has been derived. It is shown that the strong dependence of the oscillator frequency on the precession power leads to substantial broadening of the generation linewidth of a spin-torque oscillator compared to the case of a linear oscillator, i.e. an oscillator with power-independent generation frequency. The relation between the nonlinearity-induced broadening of the generation linewidth and the nonlinearity-induced increase of the phase-locking band of a spin-torque oscillator to an external microwave signal has been revealed. The derived expression for the generation linewidth predicts a linewidth minimum when the nano-contact is magnetized at a certain angle to its plane, at which the nonlinear frequency shift vanishes. This result is in good agreement with recent experiments.

• Journal of Magnetics
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• v.14 no.4
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• pp.168-171
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• 2009

We propose a new type of spin torque nano-oscillator structure with an exchange- biased free rotating layer. The proposed spin torque nano-oscillator consists of a fixed layer and a free rotating layer with an additional anti-ferromagnetic layer, which leads to an exchange bias in the free rotating layer. The spin dynamics of the exchange-biased free rotating layer can be described as an additional exchange field because the exchange bias manifests itself by the existance of a finite exchange bias field. The exchange bias field plays a similar role to that of a finite external field. Hence, microwave generation can be achieved without an external field in the proposed structure.

• Journal of Magnetics
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• v.13 no.4
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• pp.153-156
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• 2008

We conducted a micromagnetic modeling study to investigate the spin torque oscillator (STO) using a perpendicular polarizer. We used an additional layer of negative anisotropy constant materials (NAM) on a conventional STO. For the NAM layer, the magnetic easy plane is parallel to the in-plane easy axis of the free layer, and inhibits the development of the out-of-plane component of the magnetization in the free layer. As a result, this new type of STO provides a high frequency limit up to 50 GHz.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.263-263
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• 2008

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.556-561
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• 2013

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.28-33
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• 2013

Spin-torque oscillators (STO) is a new device that can be used as a tunable microwave source in various wireless devices. Spin-transfer torque effect in magnetic multilayered nanostructure can induce precession of magnetization when bias current and external magnetic field are properly applied, and a microwave signal is generated from that precession. We proposed a semi-empirical circuit-level model of an STO in previous work. In this paper, we present a refined STO model which gives more accuracy by considering physical phenomena in the calculation of effective field. Characteristics of the STO are expressed as functions of external magnetic field and bias current in Verilog-A HDL such that they can be simulated with circuit-level simulators such as Hspice. The simulation results are in good agreement with the experimental data.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.262.2-262.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.97-97
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.280.2-280.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.262.1-262.1
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• 2008