• 한국결정성장학회지
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• 제25권5호
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Journal of Electrochemical Science and Technology
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• 제10권4호
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• 한국산학기술학회논문지
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• 제19권10호
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• pp.401-409
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• 2018

본 연구는 패스(Path) 제어방법을 적용하여 소형전술차량에 적용된 NSD의 소음을 저감하기 위한 것이다. 소형전술차량은 고기동성 확보를 위해 후차축에 차동제한장치 중 하나인 NSD를 적용하였다. NSD는 높은 제한율을 가져 기동성을 향상 시켜주지만 기계적 구조에 의해 특정 조건에서 소음이 발생되는 단점이 있다. 이 소음은 NSD가 차동장치로써 원활한 역할 수행을 위해 기어간 유격에 의해 치간 접촉에 따라 발생되는 소음이다. 이러한 소음이 지속적으로 사용자에게 전달됨에 따라 운용자가 지속적인 문제 제기 및 개선 요구를 하고 있다. 물론, NSD의 소음으로 인해 제품의 성능 또는 내구성에 미치는 영향은 없으며, 국방규격에서 규정하는 소음 조건 역시 만족한다. 하지만, 사용자의 지속적인 개선요구에 따라 소음저감을 위한 방안에 대해 연구를 수행하였다. 따라서, 본 연구에서는 소음원의 제거가 현실적으로 제한되는 전술차량의 NSD 소음을 감소하기 위해 NSD의 소음이 전달되는 경로를 제어하는 패스제어방법을 적용하였다. 이를 통해 구조 전달계를 개선 보완하고 이에 대한 개선효과를 검증하고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.851-856
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• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

• Journal of Magnetics
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• 제21권1호
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• pp.40-45
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• 2016

Nickel substituted nano-sized ferrite powders, $Co_{1-x}Ni_xFe_2O_4$, $Mn_{1-x}Ni_xFe_2O_4$ and $Mn_{1-2x}Zn_xNi_xFe_2O_4$ ($0.0{\leq}x{\leq}0.2$), were fabricated using a sol-gel method, and their crystallographic and magnetic properties were subsequently compared. The lattice constants decreased as quantity of nickel substitution increased, while the particle size decreased in $Co_{1-x}Ni_xFe_2O_4$ ferrite but increased for the $Mn_{1-x}Ni_xFe_2O_4$ and $Mn_{1-2x}Zn_xNi_xFe_2O_4$ ferrites. For the $Co_{1-x}Ni_xFe_2O_4$ and $Mn_{1-x}Ni_xFe_2O_4$ ($0.0{\leq}x{\leq}0.2$) ferrite powders, the $M{\ddot{o}}ssbauer$ spectra could be fitted as the superposition of two Zeeman sextets due to the tetrahedral and octahedral sites of the $Fe^{3+}$ ions. However, the $M{\ddot{o}}ssbauer$ spectrum of $Mn_{0.8}Zn_{0.1}Ni_{0.1}Fe_2O_4$ consisted of two Zeeman sextets and one single quadrupole doublet due to the ferrimagnetic and paramagnetic behavior. The area ratio of the $M{\ddot{o}}ssbauer$ spectra could be used to determine the cation distribution equation, and we also explain the variation in the $M{\ddot{o}}ssbauer$ parameters by using this cation distribution equation, the superexchange interaction and the particle size. The saturation magnetization decreased in the $Co_{1-x}Ni_xFe_2O_4$ and $Mn_{1-2x}Zn_xNi_xFe_2O_4$ ferrites but increased in the $Mn_{1-x}Ni_xFe_2O_4$ ferrite with nickel substitution. The coercivity decreased in the $Co_{1-x}Ni_xFe_2O_4$ and $Mn_{1-2x}Zn_xNi_xFe_2O_4$ ferrites but increased in the $Mn_{1-x}Ni_xFe_2O_4$ ferrite with nickel substitution. These variations could thus be explained by using the site distribution equations, particle sizes and spin magnetic moments of the substituted ions.

• 센서학회지
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• 제10권1호
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• pp.62-70
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• 2001

CBD방법으로 성장하여 $450^{\circ}C$로 열처리한 ZnSe 박막은 회전 무늬로부터 외삽법으로 구한 격자상수 $a_0$가 $5.6678\;{\AA}$인 zinc blend임을 알았다. Van der Pauw 방법으로 측정한 Hall 데이터에 의한 이동도는 10 K에서 150 K 까지는 불순물 산란 (impurity scatterimg)에 의하여, 150 K에서 293 K까지는 격자산란 (lattice scattering)에 의하여 감소하는 경향을 나타냈다. 또한 운반자 농도의 ln n대 1/T에서 구한 활성화 에너지($E_a$)는 0.27 eV였다. 투과 곡선의 투과단으로 본 띠 간격은 293 k에서 $2,700{\underline{5}}\;eV$이었던 것이 10K에서는 $2.873{\underline{9}}\;eV$로 변하였다. 광전류 봉우리 위치를 투과단과 비교할 때 293 K에서 30 K까지 관측된 한 개의 봉우리는 가전자대 ${\Gamma}_8$에서 전도대 ${\Gamma}_6$로 전이에 의한 광전류 봉우리이고, 10K에서 관측된 단파장대 417.3 nm($2.971{\underline{4}}\;eV$)의 봉우리는 가전자대 ${\Gamma}_7$에서 전도대 ${\Gamma}_6$로, 431.5 nm($2.873{\underline{3}}\;eV$)의 봉우리는 가전자대 ${\Gamma}_8$에서 전도대 ${\Gamma}_6$로 전이에 의한 광전류 봉우리가 관측된 것으로 판단된다. 광전류 봉우리의 10K에서 단파장대의 가전자대 갈라짐(splitting)에 의해서 측정된 ${\Delta}so$(spin orbit coupling)는 $0.098{\underline{1}}\;eV$ 였다. 10 K에서 광발광 봉우리의 440.7 nm($2.812{\underline{7}}\;eV$)는 자유 엑시톤(free exciton : $E_x$), 443.5 nm ($2.795{\underline{5}}\;eV$)는 주개-얽매인 엑시톤(donor-bound exciton) 인 $I_2(D^0,\;X)$와 445.7 nm ($2.781{\underline{8}}\;eV$)는 반개-얽매인 엑시톤(acceptor-bound exciton) 인 $I_1(A^0,X)$이고, 460.5 nm ($2.692{\underline{3}}\;eV$)는 주개-받개쌍(donor-acceptor pair:DAP) 발광, 580 nm ($2.137{\underline{6}}\;eV$)는 self activated(A)에 기인하는 광발광 봉우리로 분석된다.

• Investigative Magnetic Resonance Imaging
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• 제11권2호
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• pp.95-102
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• 2007

목적: 3.0 Tesla와 같은 고 자장에서 고해상도의 나선주사영상을 얻기 위해서는 주자장을 균일하게 만들어야 한다. 특히, 나선주사영상인 경우 스핀-에코펄스 시퀀스(SE)나 경사자계 에코 펄스 시퀀스(GE)에 비하여 측정 시간이 길기 때문에 주자장이 균일하지 못하다면, off-resonance 현상으로 영상의 blur가 심해진다. 본 연구에서는 빠른 시간 안에 주자장을 균일하게 할 수 있는 고차(Higher-order) shimming방법을 모색했다. 대상 및 방법: 3 Tesla 자기 공명 영상시스템에서 고해상도의 나선주사영상을 얻기에 적합할 정도의 균일한 주자장을 빠른 시간 안에 만들기 위해, 한번의 스캔으로 axial, sagittal, coronal 방향의 불균일도 map을 구할 수 있는 펄스 시퀀스를 제안하였고, 불균일도 map으로부터 spherical harmonics 분석를 통해 shim 코일에 적절한 전류를 인가하여 주자장을 균일하게 만들었다. 결과: 3 Tesla 자기 공명 영상 시스템에서 주자장의 불균일도는 주자장의 크기에 비례하게 된다. 제안한 펄스 시퀀스로 얻은 영상을 이용하여 불균일도 Map을 만들 수 있었고, 이를 spherical harmonics 분석을 하여 2-3회의 고차 shimming으로 불균일한 자장을 균일하게 만들 수 있었다. 제안된 고차 shimming 방법은 전체 영상 영역 뿐만 아니라 선택한 영역에 대해서만 적용도 가능하기 때문에 국부 영역에 대한 고차 shimming이 가능하다. 고차 shimming이 적용되어 주자장이 균일하게 개선된 상태에서 고해상도의 나선주사영상을 얻을 수 있었다. 결론: 3 Tesla 고자장 자기 공명 영상 시스템에서 주자장의 불균일도를 개선하기 위한 펄스 시퀀스와 알고리즘을 통해 주자장의 불균일도를 빠른 시간 안에 개선할 수 있었다. 주자장의 불균일도를 효과적으로 개선함으로써, 고해상도의 나선주사 영상을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.