• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1150-1153
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• 2006

In this paper, we investigated the effect of solvent on electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistors (OTFTs). The TIPS pentacene was spin coated by using chlorobenzene, p-xylene, chloroform and toluene as solvent. Fabricated OTFT with chlorobenzene showed field-effect mobility of $0.01\;cm^2/V{\cdot}s$, on/off ratio $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform the mobility was $5.8{\times}10^{-7}\;cm^2/Vs$, on/off ratio $1.1{\times}10^2$ and threshold voltage of 1.7 V.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.2
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• pp.76-80
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• 2005

In this paper, a miniaturized ring hybrid circuit is characterized based on a thin film microstrip (TFMS) on low-resistivity silicon. In order to obtain low-loss characteristics, a polyimide layer with 50 $\mu$m thickness is spin-coated onto the silicon to be used for the substrate. First, propagation characteristics of TFMS lines consisting of the ring hybrid circuit are presented. Then, a ring hybrid circuit based on TFMS is featured by employing the triple concentric circle approach for miniaturization. Triple concentric circle lines with $\lambda$$_{g}$/4 or 3$\lambda$$_{g}$/4 line lengths are implemented on the surface of the polyimide by circularly meandering to reduce the circuit size of the designed ring hybrid. Good agreement between measured and simulated results is obtained.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.152-156
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• 1994

The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.52-55
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• 1997

In this study, PLZT stock solutions were prepared by sol-gel processing to fabricate PLZT thin films. The stock solutions were spin-coated on ITO-glass and the film were annealed by rapid thermal annealing(RTA). The variation of tile crystallographic structure of the thin films and the phase transition with respect to it were observed using Raman spectra. Raman result showed that the band of spectra are broad as the amount of Zr substitution increased and specially, abrupt change occurs in the raman spectra upon crossing the tetragonal-rhombohedral phase boundry at 2/55/45 PLZT thin film. So, the fact that the crystallographic structure was transitted from tetragonal to rhombohedral structure was certified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.35-36
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• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the Pb($Zr_xTi_{1-x}$)$O_3$(PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were PZT(70/30) and PZT(30/70), respectively. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 15M, 6-time coated showed the 698. The remanent polarization of the 1.5M, 6-time coated PZT thick films was 38.3 ${\mu}C/cm^2$.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1505-1507
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• 1996

In this study, $(Pb_{0.88}La_{0.12})(Zr_{0.40}Ti_{0.60})O_{2.97}$ (La/Zr/Ti=12/40/60) ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. PLZT stock solutions were made and spin-coated on the ITO-glass rubstrate at 4000[rpm] for 30[sec]. Coated specimens were baked to remove the organic materials at $400[^{\circ}C]$ for 10[min]. This procedure was repeated 5 times. The coated films were finally annealed at $450{\sim}700[^{\circ}C]$ for 1[hr]. The ferroelectric perovskite phases precipitated under the sintering of $550{\sim}700[^{\circ}C]$ for 1[hr]. Relative dielectric constant of the PLZT thin were increased with increasing the sintering temperature, the thin file sintered at $650[^{\circ}C]$ showed the highest value of 196. But in the PLZT thin film sintered at $700[^{\circ}C]$, relative dielectric constant was greatly decreased due to reacts between ITO electrode and glass substrate. In all thin films, the transmittance was more than 70[%] (at 632.8[nm]).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.38-42
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• 2016

We investigate the solution coating process of organic small molecules that are easily recrystallized in a solvent. The spin-coated films of small molecule N,N'-diphenly-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) exhibit many aggregations on the surface and thus poor surface morphology. To tackle it, we have added a chain-entangled polymer poly(N-vinylcarbazole) (PVK) into the NPB solution. It is found that a small amount of PVK indeed prohibits the recrystallization of NPB in a solvent. By the addition of PVK (30 wt%), the peak-to-peak roughness of the films is reduced from 262 nm down to 2.7 nm, which is even lower than that (~5.1 nm) of the polymer film. It is also demonstrated that OLED with the PVK-mixed NPB film shows higher current and power efficiencies, compared to OLED with the NPB or PVK film. It is attributed that the addition of PVK into NPB suppresses the occurrence of leaky channels induced by the recrystallization phenomenon.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.51-55
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• 2015

We have fabricated silver nanowire (AgNW) films as a stretchable and transparent electrode on polydimethylsiloxane (PDMS) substrates using a spray coater. Inherently, they show poor surface roughness and stretchability. To tackle it, we have employed a conductive polymer, poly (3,4-ethylenedioxythiophene) : Poly(styrene sulfonate) (PEDOT : PSS). PEDTO : PSS solution is mixed with AgNWs or spin-coated on the AgNW film. Compared with AgNW film only, PEDOT : PSS film only, and polymer-mixed AgNW films, the AgNW/polymer bilayer films exhibit much better surface roughness and stretchability. It is found that spray-coating of AgNWs on uncured PDMS and spin-coating of PEDOT : PSS solution on the AgNW films enhance the surface roughness of electrodes. Such a bilayer structure also provides a stable resistance under tensile strain due to the fact that each layer acts as a detour route for carriers. With this structure, we have obtained the peak-to-peak roughness ($R_{pv}$) as low as 76.8nm and a moderate increase of sheet resistance (from $10{\Omega}/{\Box}$ under 0% strain to $30{\Omega}/{\Box}$ under 40% strain).