• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3316-3318
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• 1999

PMMA(poly-methyl methacrylate) microlens array is fabricated using transparent acrylic resin. PMMA is commonly used material for plastic lens due to its excellent visibility larger than 90% and other optical characteristics so much close to those of glass. Orthodontic resin (DENTSPLY International Inc.), commonly used in dentistry, is an transparent acrylic resin kit including MMA liquid and polymerization powder. Their mixture results in PMMA through polymerization. Using the resin PMMA layer is formed on the substrate through spin-coating. Designed pattern of lens structure is transferred to PMMA layer by RIE (Reactive Ion Etching) with oxygen plasma. Final lens shape is formed by thermal treatment that causes PMMA to reflow, The thickness of PMMA spun on the substrate is $17{\mu}m$ that is also final sag of microlens, Designed diameters of the microlenses are $200{\mu}m$, $300{\mu}m$,and $500{\mu}m$, respectively.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.922-927
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• 2001

Single-layer green ELs was fabricated with using molecularly-dispersed Bu-PBD into poly-N-vinylcarbazole(PVK) which has low operating voltage and high quantum efficiency. A EL cell structure of glass substrate/indium-tin-oxide/PVK:Bu-PBD:C6(∼ 100nm)/Ca(20nm)/Al(20nm) was employed with variable doping concentration. The keys to obtain high quantum efficiency was excellent film forming capability of molecularly dispersed into PVK and appropriate combination of cathode for avoiding exciplex. We obtained the turn-on voltage of 4.2V and quantum efficiency of 0.52% at 0.lmol% of C6 concentration which has been improved about a factor of 50 in comparison with the undoped cell. The PL peak wavelengths wouldn\`t be turned by changing the concentration of the C6 dopant. Green EL emission peak and FWHM were 520nm and 70nm respectively. PL emission peak was obtained at 495nm.

• 한국표면공학회지
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• 제32권3호
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• pp.456-460
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• 1999

Transparent conducting tin (IV) oxide thin films have been studies and developed for the electrode materials of solar cell substrate. Fabrication of tin oxide thin films by sol-gel method is process development of lower cost photovoltaic solar cell system. The research is focused on the establishment of process condition and development of precursor. The precursor solution was made of tin isopropoxide dissolved in isopropyl alcohol. The hydrolysis rate was controlled by addition of triethanolamine. Dip and spin coating technique were applied to coat tin oxide on borosilicate glass. The resistivity of the thin film was lower than 0.1Ω-cm and the transmittance is higher than 90% in a visible range.

• 한국자기학회지
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• 제5권5호
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• pp.758-761
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• 1995

The magnetization of $Mn_{1-x}Co_{x}Pt_{3}$ ordered alloys was measured at various temperatures and the pressure effect on $T_{c}$ for X=0.25, 0.5 and 0.6 was examined. The X dependence of $T_{c}$ determined by Arott plot has a minimum near X=0.6. The field-cooling effect measurement for X=0.5 shows a reentrant spin glass behavior. It is found that there is a concentration showing no pressure dependence of $T_{c}$ between X=0.25 and 0.5. These magnetic properties are discussed with a rigid band model.

• 마이크로전자및패키징학회지
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• 제3권1호
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• pp.33-40
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• 1996

MOD법에 의해 BST박막을 제조하고 전기적 특성을 측정함으로써 마이크로 회로에 적용가능성을 타진하였다. MOD 공정의 선구물질로서 barium neodecanoate, strontium 2-ethylhexanoate 및 titanium dimethoxy 야-2-ethylheanoate를 합성하였다, 합성된 선구물 질들을 Ba0.5Sr0.5TiO3가 되도록 화학양론적으로 혼합하여 공통용매인 p-xylene에 녹인다음 기판위에 spin coating 방법으로 박막을 형성하여 건조하고 소성하였다. 사용된 기판은 ITO/glass, Pt/SiO2/Si, Pt/Ti/SiO2/Si 및 Pt foil을 사용하였다. 소성 속도를 빨리했을 경우 소성속도를 느리게 했을때에 비하여 훨씬 균일하고 치밀한 박막을 얻을수 있었다, 여러 가 지 제조조건의 변화에 따른 유전상수 I-V 특성 및 C-V 측성 등의 전기적 특성을 측정하고 고찰하였다.

• 대한전자공학회논문지
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• 제19권5호
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• pp.5-11
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• 1982

슬라이드 글라스와 위에 1μm 가량의 산화막을 입힌 실리콘 웨이퍼 위에, 폴리우레탄이나 에폭시 등의 유기 물질을 스핀너 (spinner)로 코우팅시켜서 평판형 유전체 도파관(dielectric slab waveguide)을 제작하고, 프리즘으로 빛을 커플링 (coupling) 시켜서 광도파 현상을 화인했다. 실리콘 웨이퍼나 슬라이드 글라스 위에다 알루미늄이나 은(Ag)을 진공증착시킨 것을 기관으로 사용하여 금각판 도파관(metal clad waveguide)을 제작하고, 프리즘 2개로 커플링 (coupling), 디커플링 (decoupling)시켜서 모우드 라인(mode line)을 관찰했다. 포토리지스트 K. P. R.의 굴절율이 폴리우레탄의 굴절율보다 큰 점을 이용하여 2층 구조의 박막 프리즘을 제작하고 빛이 꺾이는 현상을 확인했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.86-90
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• 1997

We were evaluated from organic insulator of low dielectric constants, This organic insulator material is not only conservate TFT chanel but also used to insulator material to data line and pixel ITO electrod. This organic insulator material is possessed high platness and we can coat by Spin-On-Glass type. And we can make high aperature device because minimized black matrix width from coupling cap to data line and pixel ITO electrod, This evaluation with acryl over coat and PFCB(perflorecyclobutine) and we got good results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.1.1-4
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• 1995

In this study, PLZT thin films in AFE region prepared by sol-gel processing were investigated. And PLZT stock solutions were spin-coated on ITO-glass. The PLZT thin films were annealed by RTA. Hysteresis curves, dielectric characteristics and optical transmittances were measured in order to investigates the characteristics far the thin films. The PLZT thin films were crystallized at 750$^{\circ}C$ for 5 mimutes by RTA and the rosette structure composed of perovskite observed in the thin films. In case La content was 2/90/10 antiferroelectric-ferroelectric phase boundary was 2/90/10 PLZT thin film, and its hysteresis curve was good for application of optical information storage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.305-306
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• 2006

Ga-doped and Al-doped ZnO thin films were fabricated via a sol-gel technique and electrical and optical properties of the films were investigated. Film deposition was performed by spin coating at 4000 rpm for 30 s on $SiO_2$ glass substrate FE-SEM was used to obtain the surface morphology images and the film thickness Four-point probe and UV-VIS spectrophotometer were used to measure the sheet resistance and the optical transparency, respectively.

• Journal of Korean Vacuum Science & Technology
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• 제6권1호
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.