• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1106-1110
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• 2005

We fabricated (110) silicon hard master by using anisotropic wet etching for embossing. The etching chemical for the silicon wafer was a TMAH $25\%$ solution. The anisotropic wet etching produces a smooth sidewall surface and the surface roughness of the fabricated master is about 3 nm. After spin coating an organic-inorganic sol-gel hybrid material on a silicon substrate, we employed hot embossing technique operated at a low pressure and temperature to form patterns on the silicon substrate by using the fabricated master. We successfully fabricated the multi-mode planar optical waveguides showing low propagation loss of 0.4 dB/cm. The surface roughness of embossed patterns was uniform for more than 10 times of the embossing processes with a single hydrophobic surface treatment of the silicon hard master.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.582-585
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• 2004

Pb0.5Sr0.5TiO3 (PST) thin films were fabricated by the alkoxide-based sol-gel process using spin-coating method on Pt/Ti/SiO2/Si substrate. The PST films annealed from 500C to 650C for 1h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increases with the increase in annealing temperature, which reduces the SiO2 equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlate well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650c (teq : 0.89 nm) were 549 and 0.21%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.234-234
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• 2008

Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.

• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.499-504
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• 1994

PbTiO3 thin films were prepared by sol-gel spin coating method using metal alkoxide and diethanolamine (DEA). The precipitation of the PbTiO3 sol occurred at pH 7.3 with HNO3 addition, regardless of the amount of DEA. The gelation time of the PbTiO3 sol was reduced with increasing amount of HNO3 and/or water. When the PbTiO3 films prepared by 0.2 molar coating solution were annealed at $650^{\circ}C$ for 30 min, dense and single phase perovskite films were obtained. Dielectric constant and loss tangent of the film were 239 and 0.01 at 1 kHz, respectively.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.577-583
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• 2011

Stabilized biocompatible superparamagnetic iron oxide nanoparticles (SPIONs) were prepared by controlled coprecipitation method for hyperthermia application. ESR measurements determined that all of the interactions in the individual SPIONs (1 nm and 11 nm) were antiferromagnetic in nature because the ions contributed to the magnetization with a range of magnetic moments. In-situ monitoring of the temperature increment was performed, showing that the microwave absorption rate of the SPIONs was dispersed in an appropriate host media (polar or non-polar solvents) during microwave irradiation. Microwave absorption energy rates and heat loss of SPIONs in solvent were calculated by non-linear data fitting with an energy balance equation. The microwave absorption rates of SPIONs dispersed in solvent linearly increases when the concentration of SPIONs increases, implying that the microwave absorption rate can be tunable by changing the concentration of SPIONs.

• Journal of the Korean Magnetic Resonance Society
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• v.19 no.3
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• pp.119-123
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• 2015

The thermodynamic properties and structural geometry of $KMgCl_3{\cdot}6H_2O$ were investigated using thermogravimetric analysis, differential scanning calorimetry, and nuclear magnetic resonance. The initial mass loss occurs around 351 K ($=T_d$), which is interpreted as the onset of partial thermal decomposition. Phase transition temperatures were found at 435 K ($=T_{C1}$) and 481 K ($=T_{C2}$). The temperature dependences of the spin-lattice relaxation time $T_1$ for the $^1H$ nucleus changes abruptly near $T_{C1}$. These changes are associated with changes in the geometry of the arrangement of octahedral water molecules.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.300-303
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• 2000

The generation of the intermodulation noises in microwave isolators has been studied in relation to the characteristics of YIG ferrites designed for this application. We have investigated the influences of porosity and crystalline anisotropy related to the magnetic loss, which causes the generation of intermodulation signals. The power dependence of the intermodulation power level is stressed as the crystalline anisotropy decreases. These results are consistent with the nonlinear effects of a single normal mode before the excitation of the spin-waves. It also appears that this power level is proportional to the magnitude of dc bias magnetic field.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1243-1244
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the Ginseng society Conference
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• 1998.06a
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• pp.57-62
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• 1998

We hypothesized the primary effect of ginseng was to protect cell membrane fatty acids from decomposition caused by free radicals. To confirm the antioxidant effect of ginseng, we measured the inhibitory effect on the formation of thiobarbituric acid-reactive substances, an indicator of lipid peroxidation, and evaluated the free radical scavenging effect of ginseng by electron spin resonance spectrometer, and gas chromatography. The results showed that thiobarbituric acid-reactive substances formed and the loss of arachidonic acid during lipid peroxidation, and that hydroxyl (-like) radical peak formed by the iron complex (ferric nitrilotriacetate, an known free radical generator in vitro) were completely inhibited by ginseng extract. This antioxidant effect of ginseng may be responsible for its wide pharmacological actions in clinical practice. As the free radical reactions in general are rapid and non-specific, ginseng seems to act as a normalizer, rather than a general tonic, at the stages of acute or chronic active phase of the various diseases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.83-86
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• 1998

Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.