• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.34-38
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• 2000

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at $150[^{\circ}C]$ for 5 minutes. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics by Fractal Process. Thickness of BST ceramics thin films are about $2000{\AA}$. Dielectric constant and loss of thin films was little decreased at 1[KHz] - 1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.291-293
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• 1997

In this study, Sol-Gel derived $(Ba_{0.7}Sr_{0.3})TiO_3$ thin films were fabricated and investigated. The stock solution was synthesized and spin-coated on Pt/Ti/$SiO_2$/Si substrate at 4000(rpm] and then, annealed at $650{\sim}750[^{\circ}C]$. Crystallization condition, microstructural properties and interfacial structure were observed by XRD, AFM, SEM and TEM. It was found that the BST thin films were completely crystallized at 750[$^{\circ}C$] and showed nano-sized grains. The dielectric constant and loss of the BST thin films were 220, 0.01 at 1[kHz] respectively. Increasing the temperature, the dielectric constant and loss characteristics were not varied widely. At the applied voltage of 1.5[V], the leakage current density was under the $10^{-9}[A/cm^2]$.

• International Journal of Industrial Entomology and Biomaterials
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• v.38 no.2
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• pp.31-37
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• 2019

Silkworm larval mortality specifically during spinning stage leading to non-spinning with specific morphological symptoms was frequently complained by sericulturists in Karnataka, India during 2015. Survey was conducted and information collected through questionnaire from the identified farmers who faced the problem of non-spinning in both traditional and non-traditional areas of Karnataka. Survey results indicate that the problem is specific to the silkworm crop of those farmers' who shifted from other crops of agriculture/ horticulture/olericulture/ floriculture to Sericulture. Silkworm rearing performance of the batches fed with these leaves confirmed that the pesticide sprayed to the crops previous to mulberry, remain in the soil and when mulberry plantation is taken up in these gardens, the pesticide is absorbed by the roots of mulberry plants and transported to the leaves. Silkworms that feed on these mulberry leaves, grow and ripen normally but during spinning stage, larvae die with external symptoms like regurgitation, body shrinkage, rectal protrusion later become hook shaped leading to non-spinning or partial metamorphosis into pupa and death or spin flimsy cocoons. Larval mortality ranged from a minimum of twenty five percent to a maximum of hundred percent. The problem was noticed from the first harvest of leaves and lasted for a maximum period of 36 months. Cocoon crop loss depends on the concentration, duration and type of pesticides used previously for other crops.

• Archives of Metallurgy and Materials
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• v.65 no.4
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• pp.1287-1291
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• 2020

The U-type ferrite is a kind of hexagonal ferrite, and it is known as a microwave absorber in the X-band. The magnetic and dielectric loss of the U-type ferrite change to the composition and coating layer, etc. In this study, the silicon oxide layer was coated on the substituted U-type ferrites to improve microwave absorption characteristics. The complex permittivity and complex permeability were measured using toroidal specimens that were press-molded and the measured frequency range was set from 2-18 GHz. The improvement of the microwave absorption rate was different according to the type of the substituted U-type ferrites. Only in the substituted U-type ferrites with nickel and zinc, an improvement in the microwave absorption rate due to enhancement of magnetic loss was confirmed. The highest microwave absorption was 99.9% at 9.6 GHz, which was S_Z_0.5U.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.187-191
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• 1995

Thin film of the (Pb$\_$1-x/La.sub x/)(Zr$\_$0.25/Ti/Sub 0.48/) O$_3$(x=0~13[at%]) were prepared by Sol - Gel method. Multi-layer PLZT thin films were fabricated by spin-coating on Pt/Ti/SiO$_2$/Si substrate. The crystallinity and microstructure of the films were investigated with the sintering condition. At the sintering temperature of of 600[$^{\circ}C$], the perovskite phase was dominat. PLZT(11/52/48)thin films sintered at 600[$^{\circ}C$], 1[hr] had good dielectric constant (1236), dielectric loss (2.2[%]), remanent polarization (1.38[${\mu}$C/$\textrm{cm}^2$] and coercive field(16.86[ kV/cm]) respectively.

• Proceedings of the KOSOMBE Conference
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• v.1995 no.11
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• pp.124-127
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• 1995

Due to the self-diffusion of nuclear spins, the edge of phantoms is enhanced in the magnetic resonance imaging (MRI), especially in the case of microscopy [1]. According to several published works, theory has been established that the edge enhancement is caused by the motion narrowing around bounded regions due to diffusions of nuclear spins during data acquisition. It is found, however, that the signal decreases due to the diffusion attenuation and image is distorted as edge of the image is sharpened. In this paper, we wilt investigate this signal loss during data acquisition and its effects on image, i.e., image edge enhancement due to the diffusion phenomenon. This result is new and different from the previously discussed edge enhancement due to the diffusion, namely, by motion narrowing effect or spin bouncing effect at the boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.247-250
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• 1998

Ferroelectric PZT(10/90)PZT(90/10) heterolayered thin films were fabricated by spin-coating method on the Pt/Ti/SiO$^2$/Si substrate alternately using PZT(10/90) and PZT(90/10) metal alkoxide solutions. The coating and heating procedure was repeated six times to form PZT heterolayered films. The surface, cross-sectional microstructures and thickness of the films were observed using scanning electron microscope(SEM). The relative dielectric constant and dielectric loss of the 5-coated PZT heterolayered films were 1331 and 4.8% respectively.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2209-2210
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.577-578
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.2
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• pp.76-80
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• 2005

In this paper, a miniaturized ring hybrid circuit is characterized based on a thin film microstrip (TFMS) on low-resistivity silicon. In order to obtain low-loss characteristics, a polyimide layer with 50 $\mu$m thickness is spin-coated onto the silicon to be used for the substrate. First, propagation characteristics of TFMS lines consisting of the ring hybrid circuit are presented. Then, a ring hybrid circuit based on TFMS is featured by employing the triple concentric circle approach for miniaturization. Triple concentric circle lines with $\lambda$$_{g}$/4 or 3$\lambda$$_{g}$/4 line lengths are implemented on the surface of the polyimide by circularly meandering to reduce the circuit size of the designed ring hybrid. Good agreement between measured and simulated results is obtained.