• Bulletin of the Korean Chemical Society
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• v.4 no.4
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• pp.191-193
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• 1983

• Proceedings of the Korean Magnestics Society Conference
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• 1997.05a
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• pp.30-31
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.325-326
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• 2000

Low temperature diagnosis was performed as a probe for the integrity of MTJ(Magnetic tunnel junction) process which is optimised for the given plasma oxidation condition. TMR ratio increased slowly with decreasing temperature than that expected from spin wave exitation theory〔1〕. Junction resistance (RJ) does not follow T$\^$-$\frac{1}{2}$/ law below 200 K, indicating another conduction path besides spin polarized tunneling is involved at low temperature. Temperature dependence of conductance dip and bias dependence of TMR with temperature are discussed, from which the quality of tunnel barrier and its formation process can be inferred.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.304-305
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• 2013

We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

• Journal of Magnetics
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• v.9 no.2
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• pp.60-64
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• 2004

In this paper calculations of magnetisation and magnetoresistance characteristics of the Spin Valve (SV) and Pseudo Spin Valve (PSV) spintronics structures are reported and compared with the experimental data. The magnetisation reversal process was analysed with respect to the Stoner- Wohlfahrt model of total surface energy in terms of uniaxial anisotropy, exchange coupling between ferromagnetic layers, unidirectional exchange anisotropy of pinned layer (modelled by exchange coupling between magnetisation of pinned layer and net magnetisation of antiferromagnetic layer with high anisotropy). The numerical simulation of the model to the experimental magnetisation data yielded the above parameters for SV and PSV structures. These parameters were used to more sophistically micromagnetic modelling tool originating from the project called Object Oriented Micromagnetic Framework. Influence of the shape anisotropy of the Magnetic Tunnelling Junction cell used in MRAM was simulated by means of micromagnetic simulations. Results were compared to those obtained from the spot Kerr measurements.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.258-264
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• 1997

Exchange and interlayer couplings between a NiFe ferromagnetic layer and an antiferromagnetic NiO layer in NiO/NiFe/Cu/NiFe spin-valve films prepared by rf/dc magnetron sputtering were investigated. The interlayer coupling field ($H_{int}$ decreased with the Cu layer thickness, and the exchange coupling field $(H_{ex}$ saturated to 90 Oe. the magnetitudes of $H_{ex}$ and $H_{int}$ decreased with increasing thickness of the pinned NiFe layer. The increase of $H_{int}$ with the free NiFe layer may be due to the increased magnetization.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.196-202
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P1)/Ru/CoFe(P2)/FeMn/Ta on Si(100) substrate with natural oxide were prepared by dc magnetron sputtering system, and investigated on the magnetoresistance properties and effective exchange bias field. As the thickness of FeMn increased above 150 $\AA$, MR ratio was decreased due to the current shunting effect. As the thickness of free layer decreased below 40$\AA$, MR ratio was reduced rapidly. In case of 40 $\AA$ thick of free layer, spin valve film with a structure Si(100)/Ta(50 $\AA$)/NiFe(27 $\AA$)/CoFe(13 $\AA$)/Cu(26 $\AA$)/CoFe(30 $\AA$)/Ru(7 $\AA$)/CoFe(15 $\AA$)/FeMn(100 $\AA$)/Ta(50 $\AA$) exhibited maximum MR ratio of 7.5 % and an effective exchange bias field of 600 Oe, respectively. Thickness difference dependence in this synthetic spin valve structure on effective exchange field was investigated and interpreted by the analytical method. It should be noted that thickness increase of CoFe(P 1) and decrease of CoFe(P2) in synthetic antiferromagnet leaded to the decrease in effective exchange bias field by experimentally and analytically.

• Journal of Magnetics
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• v.10 no.2
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• pp.52-57
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• 2005

In this research, magnetoresistance (MR) ratio (MR), resistivity, and exchange coupling field $(H_{ex})$ behaviors for sputter deposited spin valves with FeMn antiferromagnetic layer have been extensively investigated by rapid thermal annealing (RTA) as well as conventional annealing (CA) method. 10 s of RTA revealed that interdiffusion was not significant up to $325^{\circ}C$ at the interfaces between the layers when the RTA time was short. The MR of FeMn spin valves were reduced when the spin valves were exposed to temperature of $250^{\circ}C$, even for a short time period of 10 s prior to CA. $H_{ex}$ was maintained up to $325^{\circ}C$ of CA when the specimen was subjected to 10 s of RTA at $200^{\circ}C$ prior to CA, which is $25^{\circ}C$ higher than the result obtained from the CA without prior RTA. Therefore, the stability of $H_{ex}$ could be enhanced by a prior RTA before performing CA up to annealing temperature of $325^{\circ}C$. MR and sensitivity of the specimens annealed without magnetic field up to $275^{\circ}C$ were recovered to the values prior to CA, but $H_{ex}$ was not recovered. This means that reduced MR sensitivity and MR during the device fabrication can be recovered by a field RTA.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.86-92
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• 2000

The spin wave absorption spectra are obtained by a simultaneous solution of the Maxwell equation and the Gilbert equation considering the boundary condition of electromagnetic wave and magnetization in the film surfaces. The physical parameters that influence the absorption energy are thickness, exchange stiffness constant, surface magnetic anisotropy, magnetization. damping factor, electric resistivity of the thin film. We investigated how these parameters affect the resonance field, the linewidth and the intensity of the spin wave spectrum.

• Journal of Magnetics
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• v.6 no.3
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• pp.83-85
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• 2001

The magnetoresistance properties of NiO/NiFe/Cu/NiFe spin valve film deposited on MgO(100) substrate with YBa$_2$$Cu_3O_7$(YBCO) film were investigated at room temperature and at 77 K. The magnetoresistance (MR) curves of the hybrid superconductor-magnetoresistor film structure showed an exchange coupling field of 300 Oe and an inverse magnetoresistance ratio of -6.5%. The magnetization configurations of the two magnetic layers in the NiO spin valve were antiparallel due to an increment in the conduction electron flow to superconductor YBCO film. This sample showed an inverse MR ratio.