• 한국전기전자재료학회논문지
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• 제19권5호
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• pp.411-416
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• 2006

A new reading technology for the ultra-high density data storage device utilizing AFM technology was proposed and its experimental results were discussed in this paper. For the experiments, an about $2{\mu}m$ thick conductive polymer layer was spin-coated on the heavily doped n-type Si wafer and an about $0.1{\mu}m$ thick PMMA layer was also been spin-coated on it. After then, the $5{\times}5$ memory way was fabricated by making indents on the surface of the wafer with the heated AFM tip, and the data reading was performed by scanning the surface with the tip biased at 10 V and the measuring the current flowing out at the end of the tip. The experimental results clearly showed that the new data reading technology worked superbly. The current measured was about 0.92 pA at the cell with the indent, and it was not only below 0.31 pA at the cell without the indent, but also at the cell where the indent was erased.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2010년도 제34회 춘계학술대회논문집
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• pp.326-330
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• 2010

본 연구진은 레이저-물질 간의 상호작용을 응용하여 새로운 방식의 약물 전달 시스템을 개발하고 있다. 레이저 빔이 마이크로 단위 크기의 고무 챔버 속에 채워져 있는 액체 속에 집광되면 순간적인 고에너지 전달로 인해 기포가 생겨나고, 이로 인한 빠른 부피팽창으로 인해 마이크로 노즐 속의 약물 용액이 빠른 속도의 마이크로 젯의 형태로 분사되는 원리를 이용하는 것이다. 실험에서 노즐 출구의 지름은 125 ${\mu}m$, 측정된 마이크로 젯의 속도는 265 m/s였다. 이 장치의 주요한 특징은 시간에 따른 마이크로 젯의 제어가 가능하다는 것이다.

• 한국자기학회지
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• 제20권2호
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• pp.41-44
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• 2010

NiFe/Cu/NiFe/IrMn 스핀밸브 박막에 대해 Cu의 두께에 의존하는 자장감응도를 조사하였다. Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) 다층박막 구조에 대해 측정한 Minor 자기저항 곡선에서 자기저항비, 자장감응도, 보자력, 층간상호교환결합력은 각각 1.46 %, 2.0 %/Oe, 2.6 Oe, 0.1 Oe 이었다. 광 리소그래피 공정으로 제작한 10가지 다른 폭 크기와 $4.45\;{\mu}m$의 길이를 갖는 GMR-SV 소자의 자장감응도는 폭 크기가 $10\;{\mu}m$에서 $1\;{\mu}m$까지 작아짐에 따라 0.3 %/Oe에서 0.06 %/Oe로 감소하였다.

• 센서학회지
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• 제31권4호
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• 한국세라믹학회지
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• 제34권3호
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• pp.314-322
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• 1997

극저 유전특성을 갖는 SiO2 에어로겔의 박막화의 층간 절연막으로써의 응용성이 연구되었다. 점도가 10~14cP인 SiO2 폴리머 졸을 이소프로판을 분위기 하에서 1000~7000m으로 p-Si(111) 웨이퍼 상에 스핀코팅한 습윤겔 박막을 25$0^{\circ}C$와 1160 psing 조건에서 초임계건조하여 0.5 g/㎤ 정도의 밀도(78% 기공율) 와 4000~21000$\AA$ 범위의 두께를 갖는 SiO2 에어로겔 박막을 제조하였다. 박막의 두께와 미세구조를 제어할 수 있는 주요 인자는 졸의 농도, 회전속도 및 습윤겔 숙성시간임을 알 수 있었다. SiO2 에어로겔 박막의 유전상수 값은 giga급 이상의 차세대 반도체 소자에 충분히 응용될 수 있을 정도로 낮은 2.0 정도이었다.

• 센서학회지
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• 제26권5호
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• pp.366-369
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• 2017

This work presents a detailed study of several parameters on the spray coating method for fabricating a flexible cantilever. Conventionally, spin coating method have been widely used in the microelectromechanical system (MEMS) fabrication process. However, the major drawback of this method is the difficulties in protecting various topography with photoresist film, particularly when the device is manufactured in high aspect ratio. It is also a challenging process to form a small pattern in the etched area. On the other hand, the commercial spray coating systems are not advantageous from an economic perspective and the technique is also providing less efficient. In order to solve these issues, we have developed a manual spray coating system which can be efficiently used by combining the accessories available in the laboratory. The developed spray coating system consists of a spin-coater, motorized stage, a spray gun with the capable of controlling centrifugal force, injection amount, injection angle, and spray range. The major advantage of the proposed spray coating system is its reasonable fabrication cost. Secondly, the system can be easily disassembled after finishing the coating experiment. Owing to the mentioned advantages, we sincerely believe that the proposed spray coating system can be effectively used in many related applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 임시총회 및 하계학술연구발표회
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• pp.161-163
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• 2015

The micro device, coil, and channel for the biosensor integrated with the GMR-SV device based on the antiferromagnetic IrMn layer was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ passed on the micro channel, the movement of RBC + ${\mu}Beads$ is controlled by the electrical AC input signal. The RBC + ${\mu}Beads$ having a micro-magnetic field captured above the GMR-SV device is changed as the output signals for detection status. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property as the membrane's deformation of RBC coupled to magnetic beads.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.278-283
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• 2015

In this work, the electrical bistability of an organic CT complex is demonstrated and the possible switching mechanism is proposed. 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and tetracyanoquinodimethane (TCNQ) are used as an organic donor and acceptor, respectively, and poly-methamethylacrylate (PMMA) is used as a polymeric matrix for spin-coating. A device with the Al/($Al_2O_3$)/PMMA:BCP:TCNQ[1:1:0.5 wt%]/Al configuration demonstrated bistable and switching characteristics similar to Ovshinsky switching with a low threshold voltage and a high ON/OFF ratio. An analysis of the current-voltage curves of the device suggested that electrical switching took place due to the charge transfer mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.321-321
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• 2010

The PEDOT:PSS layer is usually used as hole transporting layer for the polymer bulk heterojunction solar cells. However, the interface between ITO and PEDOT:PSS is not stable and the chemical reaction between ITO and PEDOT can result in degraded device performance. We used the tungsten oxides as a hole transport layer by spin-coating. The $WO_3$ nanoparticles were well dispersed in ammonium hydroxide and deionized water and formed thin layer on the ITO anode. We found that $WO_3$ surface is more hydrophobic than the bare ITO or PEDOT:PSS-coated surfaces. The hydrophobic surfaces promote an ordered growth of P3HT films. A higher degree of P3HT ordering is expected to improve the hole mobility and the lifetime of the device using the tungsten oxide showed better stability compared to the device using the PEDOT:PSS.