• Journal of the Korean Magnetics Society
• /
• v.19 no.1
• /
• pp.35-42
• /
• 2009

Among the next generation memory, MRAM (Magnetic Random Access Memory) is worthy of notice for substituting the preexisting memory thanks to its non-volatile property and other advantages. Recently perpendicular MRAM and spin transfer torque MRAM techniques are under active investigation to realize a high density and low power consumption. As a result, there are increasing of patents applications for high density, low current density for magnetization switching and high thermal stability. In this paper, we analyze the trend of patent applications and registrations about MRAM and propose a direction of future investigation.

• The Bulletin of The Korean Astronomical Society
• /
• v.46 no.1
• /
• pp.50.2-51
• /
• 2021

Stars form exclusively in cold and dense molecular clouds. To fully understand star formation processes, it is hence a key to investigate how molecular clouds form out of the surrounding diffuse atomic gas. With an aim of shedding light in the process of the atomic-to-molecular transition in the interstellar medium, we analyze Arecibo HI emission and absorption spectral pairs along with TRAO/PMO 12CO(1-0) emission spectra toward 58 lines of sight probing in and around molecular clouds in the solar neighborhood, i.e., Perseus, Taurus, and California. 12CO(1-0) is detected from 19 out of 58 lines of sight, and we report the physical properties of HI (e.g., central velocity, spin temperature, and column density) in the vicinity of CO. Our preliminary results show that the velocity difference between the cold HI (Cold Neutral Medium or CNM) and CO (median ~ 0.7 km/s) is on average more than a factor of two smaller than the velocity difference between the warm HI (Warm Neutral Medium or WNM) and CO (median ~ 1.7 km/s). In addition, we find that the CNM tends to become colder (median spin temperature ~ 43 K) and abundant (median CNM fraction ~ 0.55) as it gets closer to CO. These results hints at the evolution of the CNM in the vicinity of CO, implying a close association between the CNM and molecular gas. Finally, in order to examine the role of HI in the formation of molecular gas, we compare the observed CNM properties to the theoretical model by Bialy & Sternberg (2016), where the HI column density for the HI-to-H2 transition point is predicted as a function of density, metallicity, and UV radiation field. Our comparison shows that while the model reproduces the observations reasonably well on average, the observed CNM components with high column densities are much denser than the model prediction. Several sources of this discrepancy, e.g., missing physical and chemical ingredients in the model such as the multi-phase ISM, non-equilibrium chemistry, and turbulence, will be discussed.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.7
• /
• pp.959-964
• /
• 2004

A low-dimensional metal frequently exhibits a metal-insulator transition through a charge-density-wave (CDW) or a spin-density-wave (SDW) which accompany it's structural changes. The transition temperature is thought to be determined by the amount of energy produced during the transition process and the softness of the original structure. $AMo_4O_6$ (A=K, Sn) are known to be quasi-one dimensional metals which exhibit metalinsulator transitions. The difference of the transition temperatures between $KMo_4O_6$ and $SnMo_4O_6$ (A=K, Sn) is examined by investigating their electronic and structural properties. Fermi surface nesting area and the lattice softness are the governing factors to determine the metal-insulator transition temperature in $AMo_4O_6$ compounds.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1016-1019
• /
• 2005

We studied the density control of carbon nanotubes (CNTs) which were grown on the iron nanoparticles prepared from iron-acetate [$Fe(II)(CH_3COO)_2$] solution using freeze-dry method. The density of CNTs was controlled for the enhancement of field emission. The patterning process of iron-acetate catalyst-layer for the fabrication of electronic device was simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to formation of the electron emitter with under gate type triode structure.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1455-1458
• /
• 2005

We studied the density control of carbon nanotubes (CNTs) which were grown on the iron nanoparticles prepared from iron-acetate $[Fe(II)(CH_3COO)_2]$ solution using freeze-dry method. The density of CNTs was controlled for the enhancement of field emission. The patterning process of iron-acetate catalyst-layer for the fabrication of electronic device was simply achieved by using alkaline solution, TMAH (tetramethylammonium hydroxide). We applied this patterning process of catalyst layer to formation of the electron emitter with under-gate type triode structure.

• Nuclear Engineering and Technology
• /
• v.34 no.3
• /
• pp.202-210
• /
• 2002

The details of the electronic structure of the perfect crystal provides a critically important foundation for understanding the various defect states in uranium dioxide. In order to understand the local defect and impurity mechanism, the calculation of electronic structure of UO$_2$ in the one-electron approximation was carried out, using a semi-empirical tight-binding formalism(LCAO) with and without f-orbitals. The energy band, local and total density of states for both spin states are calculated from the spectral representation of Green’s function. The bonding mechanism in Perfect lattice of UO$_2$ is discussed based upon the calculations of band structure, local and total density of states.

• Journal of the Korean Chemical Society
• /
• v.50 no.3
• /
• pp.243-246
• /
• 2006

The LiCoO2 thin films were prepared on the Pt/Ti/SiO2/Si substrate by spin coating using citrate sol. The citrate sol was spin-coated on substrate and dried at 380oC for 15 min. to evaporate the solvents and remove the organic materials. The as-deposited films were annealed at 750oC for 10 min. in air for crystallization. The X-ray diffraction patterns for the film have been indexed hexagonal system with space group R3m. The active area of LiCoO2 films for electrochemical test was about 11cm2. A Li foil and 1M LiClO4 in propylene carbonate(PC) and ethylene carbonate(EC) (1:1)were used as an anode and an electrolyte, respectively. The galvanostatic charge-discharge test was carried out at constant current density ranging from 5 A/cm2 in the voltage window between 4.2 and 3.0 V. The first discharge capacity of the film is 0.35Ah/cm2-m. The cycling behavior of the LiCoO2 film is also reported.

• Journal of Magnetics
• /
• v.13 no.1
• /
• pp.7-10
• /
• 2008

The structural and magnetic properties of functionalized carbon chains doped with 4d transition metals, such as Ru, Rh, and Pd, were investigated using the full-potential linearized augmented plane wave (FLAPW) method. The carbon nanowire doped with Ru exhibited a ferromagnetic ground state with a sizable magnetic moment, while those doped with Rh and Pd had nonmagnetic ground states. For the Ru-doped chain, the density of states at the Fermi level showed large spin polarization, which suggests that the doped nanowire could be used for spintronic applications.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1453-1456
• /
• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.188-189
• /
• 2002

One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)