• 제목/요약/키워드: Spin Etcher

검색결과 5건 처리시간 0.019초

Spin Etcher의 진동 분석 (Vibration Analysis of Spin Etcher)

  • 임경화;이은경;조중근
    • 반도체디스플레이기술학회지
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    • 제2권1호
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    • pp.15-19
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    • 2003
  • Spin etcher can process frontside and backside on the wafer, which is used for etching, stripping, cleaning and wafer reclamation. A new generation of spin etchers has been designed to meet 300mm wafer processing. The larger header and higher spin speed make vibration problem a severe problem in developing equipments. This study shows schematic process of solving practical vibration problems, where it is required to analyze the principal ca uses of vibration problem and find out the method of vibration reduction in spin etcher. The vibration under normal operation is measured in time domain and is analyzed in frequency domain. And modal parameters are obtained through modal test. Using the modal parameters from experiments, the model of finite element method is formulated. From diagnosis using many measurements and analyses, it can be shown that main cause of vibration is unbalance of head.

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12" 웨이퍼 Spin etcher용 실시간 박막두께 측정장치의 개발 (Development of Real Time Thickness Measurement System of Thin Film for 12" Wafer Spin Etcher)

  • 김노유;서학석
    • 반도체디스플레이기술학회지
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    • 제2권2호
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    • pp.9-15
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    • 2003
  • This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

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Vibration Reduction of Spin Etcher

  • Rim, Kyung-Hwa;Lww, Eun-Kyung;Cho, Jung-Keun
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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    • pp.94-96
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    • 2002
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Mechanism Study of Flowable Oxide Process for Sur-100nm Shallow Trench Isolation

  • Kim, Dae-Kyoung;Jang, Hae-Gyu;Lee, Hun;In, Ki-Chul;Choi, Doo-Hwan;Chae, Hee-Yeop
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.68-68
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    • 2011
  • As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

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