• Title/Summary/Keyword: Spin Conversion

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Development of the Organic Solar Cell Technology using Printed Electronics (인쇄전자 기술을 이용한 유기 태양전지 기술 개발)

  • Kim, Jungsu;Yu, Jongsu;Yoon, Sungman;Jo, Jeongdai;Kim, Dongsoo
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.113.1-113.1
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    • 2011
  • PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active compo-nents in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT(Thin Film Transistor), which are printed withfunctional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manu-facturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and active layer which consist of the P3HT:PCBM. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

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Effects of Laser Doping on Selective Emitter Si Solar Cells (레이져를 이용한 도핑 특성과 선택적 도핑 에미터 실리콘 태양전지의 제작)

  • Park, Sungeun;Park, Hyomin;Nam, Junggyu;Yang, JungYup;Lee, Dongho;Min, Byoung Koun;Kim, Kyung Nam;Park, Se Jin;Lee, Hae-Seok;Kim, Donghwan;Kang, Yoonmook;Kim, Dongseop
    • Current Photovoltaic Research
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    • v.4 no.2
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    • pp.54-58
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    • 2016
  • Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.

Synthesis and Characterization of Thiophene-Based Copolymers Containing Urethane and Alkyl Functional Side Chains for Hybrid Bulk Heterojunction Photovoltaic Cell Applications

  • Im, Min-Joung;Kim, Chul-Hyun;Song, Myung-Kwan;Park, Jin-Su;Lee, Jae-Wook;Gal, Yeong-Soon;Lee, Jun-Hee;Jin, Sung-Ho
    • Bulletin of the Korean Chemical Society
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    • v.32 no.2
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    • pp.559-565
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    • 2011
  • The following noble series of statistical copolymers, poly[(2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane)-co-3-hexylthiophene] (PURET-co-P3HT), were synthesized by the chemical dehydrogenation method using anhydrous $FeCl_3$. The structure and electro-optical properties of these copolymers were characterized using $^1H$-NMR, UV-visible spectroscopy, elemental analysis, GPC, DSC, TGA, photoluminescence (PL), and cyclic voltammetry (CV). The statistical copolymers, PURET-co-P3HT (1:0, 2:1, 1:1, 1:2, 1:3), were soluble in common organic solvents and easily spin coated onto indium-tin oxide (ITO) coated glass substrates. Hybrid bulk heterojunction photovoltaic cells with an ITO/G-PEDOT/PURET-co-P3HT:PCBM:Ag nanowires/$TiO_x$/Al configuration were fabricated, and the photovoltaic cells using PURET-co-P3HT (1:2) showed the best photovoltaic performance compared with those using PURET-co-P3HT (1:0, 2:1, 1:1, 1:3). The optimal hybrid bulk heterojunction photovoltaic cell exhibits a power conversion efficiency (PCE) of 1.58% ($V_{oc}$ = 0.82 V, $J_{sc}$ = 5.58, FF = 0.35) with PURET-co-P3HT (1:2) measured by using an AM 1.5 G irradiation (100 mW/$cm^2$) on an Oriel Xenon solar simulator (Oriel 300 W).

Investigation of short-term stability in high efficiency polymer : nonfullerene solar cells via quick current-voltage cycling method

  • Lee, Sooyong;Seo, Jooyeok;Kim, Hwajeong;Song, Dong-Ik;Kim, Youngkyoo
    • Korean Journal of Chemical Engineering
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    • v.35 no.12
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    • pp.2496-2503
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    • 2018
  • The short-term stability of high efficiency polymer : nonfullerene solar cells was investigated by employing a quick (ten cycles) current density-voltage (J-V) cycling method. Polymer : nonfullerene solar cells with initial power conversion efficiency (PCE) of >10% were fabricated using bulk heterojunction (BHJ) films of poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)-benzo[1,2-b:4,5b']dithiophene))-alt-(5,5-(1',3'-di-2-thienyl-5,7'-bis(2-ethylhexyl)benzo[1',2'-c:4',5'-c']dithiophene-4,8-dione))] (PBDB-T) and 3,9-bis(2-methylene-((3-(1,1-dicyanomethylene)-6/7-methyl)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b']dithiophene (IT-M). One set of the BHJ (PBDB-T : IT-M) films was thermally annealed at $160^{\circ}C$ for 30min, while another set was used without any thermal treatment after spin-coating. The quick J-V scan (cycling) measurement disclosed that the PCE decay was relatively slower for the annealed BHJ layers than the unannealed (as-cast) BHJ layers. As a result, after ten cycles, the annealed BHJ layers delivered higher PCE than the unannealed BHJ layers due to higher and more stable trend in fill factor. The present quick J-V cycling method is simple but expected to be useful for the prediction of short-term stability in organic solar cells.

Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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Synthesis of Porous $TiO_2$ Thin Films Using PVC-g-PSSA Graft Copolymer and Their Use in Dye-sensitized Solar Cells (PVC-g-PSSA 가지형 공중합체를 이용한 다공성 $TiO_2$ 박막의 합성 및 염료감응 태양전지 응용)

  • Byun, Su-Jin;Seo, Jin-Ah;Chi, Won-Seok;Shul, Yong-Gun;Kim, Jong-Hak
    • Membrane Journal
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    • v.21 no.2
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    • pp.193-200
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    • 2011
  • An amphiphilic graft copolymer comprising a poly(vinyl chloride) (PVC) backbone and poly (styrene sulfonic acid) (PSSA) side chains (PVC-g-PSSA) was synthesized via atom transfer radical polymerization (ATRP). Mesoporous titanium dioxide $(TiO_2)$ films with crystalline anatase phase were synthesized via a sol-gel process by templating PVC-g-PSSA graft copolymer. Titanium isopropoxide (TTIP), a $TiO_2$ precursor was selectively incorporated into the hydrophilic PSSA domains of the graft copolymer and grew to form mesoporous $TiO_2$ films, as confirmed by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The performances of dye-sensitized solar cell (DSSC) were systematically investigated by varying spin coating times and the amounts of P25 nanoparticies. The energy conversion efficiency reached up to 2.7% at 100 mW/$cm^2$ upon using quasi-solid-state polymer electrolyte.

Crystallographic orientation modulation of ferroelectric $Bi_{3.15}La_{0.85}Ti_3O_{12}$ thin films prepared by sol-gel method (Sol-gel법에 의해 제조된 강유전체 $Bi_{3.15}La_{0.85}Ti_3O_{12}$ 박막의 결정 배향성 조절)

  • Lee, Nam-Yeal;Yoon, Sung-Min;Lee, Won-Jae;Shin, Woong-Chul;Ryu, Sang-Ouk;You, In-Kyu;Cho, Seong-Mok;Kim, Kwi-Dong;Yu, Byoung-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.851-856
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    • 2003
  • We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

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The Post Annealing Effect of Organic Thin Film Solar Cells with P3HT:PCBM Active Layer (P3HT:PCBM 활성층을 갖는 유기 박막태양전지의 후속 열처리 효과)

  • Jang, Seong-Kyu;Gong, Su-Cheol;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.2
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    • pp.63-67
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    • 2010
  • The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

Software development for the visualization of brain fiber tract by using 24-bit color coding in diffusion tensor image

  • Oh, Jung-Su;Song, In-Chan;Ik hwan Cho;Kim, Jong-Hyo;Chang, Kee-Hyun;Park, Kwang-Suk
    • Proceedings of the KSMRM Conference
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    • 2002.11a
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    • pp.133-133
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    • 2002
  • Purpose: The purpose of paper is to implement software to visualize brain fiber tract using a 24-bit color coding scheme and to test its feasibility. Materials and Methods: MR imaging was performed on GE 1.5 T Signa scanner. For diffusion tensor image, we used a single shot spin-echo EPI sequence with 7 non-colinear pulsed-field gradient directions: (x, y, z):(1,1,0),(-1,1,0),(1,0,1),(-1,0,1),(0,1,1),(0,1,-1) and without diffusion gradient. B-factor was 500 sec/$\textrm{mm}^2$. Acquisition parameters are as follows: TUTE=10000ms/99ms, FOV=240mm, matrix=128${\times}$128, slice thickness/gap=6mm/0mm, total slice number=30. Subjects consisted of 10 normal young volunteers (age:21∼26 yrs, 5 men, 5 women). All DTI images were smoothed with Gaussian kernel with the FWHM of 2 pixels. Color coding schemes for visualization of directional information was as follows. HSV(Hue, Saturation, Value) color system is appropriate for assigning RGB(Red, Green, and Blue) value for every different directions because of its volumetric directional expression. Each of HSV are assigned due to (r,$\theta$,${\Phi}$) in spherical coordinate. HSV calculated by this way can be transformed into RGB color system by general HSV to RGB conversion formula. Symmetry schemes: It is natural to code the antipodal direction to be same color(antipodal symmetry). So even with no symmetry scheme, the antipodal symmetry must be included. With no symmetry scheme, we can assign every different colors for every different orientation.(H =${\Phi}$, S=2$\theta$/$\pi$, V=λw, where λw is anisotropy). But that may assign very discontinuous color even between adjacent yokels. On the other hand, Full symmetry or absolute value scheme includes symmetry for 180$^{\circ}$ rotation about xy-plane of color coordinate (rotational symmetry) and for both hemisphere (mirror symmetry). In absolute value scheme, each of RGB value can be expressed as follows. R=λw|Vx|, G=λw|Vy|, B=λw|Vz|, where (Vx, Vy, Vz) is eigenvector corresponding to the largest eigenvalue of diffusion tensor. With applying full symmetry or absolute value scheme, we can get more continuous color coding at the expense of coding same color for symmetric direction. For better visualization of fiber tract directions, Gamma and brightness correction had done. All of these implementations were done on the IDL 5.4 platform.

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Analysis of Quantization Noise in Magnetic Resonance Imaging Systems (자기공명영상 시스템의 양자화잡음 분석)

  • Ahn C.B.
    • Investigative Magnetic Resonance Imaging
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    • v.8 no.1
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    • pp.42-49
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    • 2004
  • Purpose : The quantization noise in magnetic resonance imaging (MRI) systems is analyzed. The signal-to-quantization noise ratio (SQNR) in the reconstructed image is derived from the level of quantization in the signal in spatial frequency domain. Based on the derived formula, the SQNRs in various main magnetic fields with different receiver systems are evaluated. From the evaluation, the quantization noise could be a major noise source determining overall system signal-to-noise ratio (SNR) in high field MRI system. A few methods to reduce the quantization noise are suggested. Materials and methods : In Fourier imaging methods, spin density distribution is encoded by phase and frequency encoding gradients in such a way that it becomes a distribution in the spatial frequency domain. Thus the quantization noise in the spatial frequency domain is expressed in terms of the SQNR in the reconstructed image. The validity of the derived formula is confirmed by experiments and computer simulation. Results : Using the derived formula, the SQNRs in various main magnetic fields with various receiver systems are evaluated. Since the quantization noise is proportional to the signal amplitude, yet it cannot be reduced by simple signal averaging, it could be a serious problem in high field imaging. In many receiver systems employing analog-to-digital converters (ADC) of 16 bits/sample, the quantization noise could be a major noise source limiting overall system SNR, especially in a high field imaging. Conclusion : The field strength of MRI system keeps going higher for functional imaging and spectroscopy. In high field MRI system, signal amplitude becomes larger with more susceptibility effect and wider spectral separation. Since the quantization noise is proportional to the signal amplitude, if the conversion bits of the ADCs in the receiver system are not large enough, the increase of signal amplitude may not be fully utilized for the SNR enhancement due to the increase of the quantization noise. Evaluation of the SQNR for various systems using the formula shows that the quantization noise could be a major noise source limiting overall system SNR, especially in three dimensional imaging in a high field imaging. Oversampling and off-center sampling would be an alternative solution to reduce the quantization noise without replacement of the receiver system.

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