• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.157-161
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• 2005

Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5${\~}$5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the $E_l,\;E_1+{\Delta}_1$, and $E_2$ critical points. These energies were decreased with increasing thickness of CdTe thin films.