• 천문학회보
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• 제37권2호
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• pp.83.2-83.2
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• 2012

Type I AGNs are classified by the presence of broad emission lines while Type II AGNs show narrow emission lines only. All-sky surveys such as SDSS provide large AGN samples for statistical studies. However, the AGN samples suffer selection bias due to the incomplete selection criteria. To investigate the missing Type I AGNs in optical spectroscopic surveys, we start with a sample of SDSS Type II AGNs at 0.02 < z < 0.05, using the MPA-JHU SDSS DR7 catalog. We search for the hidden broad $H{\alpha}$ component with both visual inspection and the multi-component spectral decomposition method. Out of 1383 Type II AGNs, we find a total of 62 missing Type I AGNs (~4.5%). The sample has mean black hole mass, log $(M_{BH}/M_{SUN))=6.48{\pm}0.53$, and luminosity, log $(L_{H{\alpha}}/ergs^{-1})=40.52{\pm}0.33$, with Eddington ratio, log $(L_{bol}/L_{Edd})=-1.51{\pm}0.41$. We will describe the sample and present the $M_{BH}-{\sigma}_*$, and $M_{BH}-M_*$ relations of the sample in the context of the BH-galaxy coevolution.

• 한국환경과학회지
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• 제30권1호
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• pp.57-67
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• 2021

Photocatalytic green energy H2 production utilizing inexhaustible solar energy has been considered as a potential solution to problems of energy scarcity and environmental contamination. However, the design of a cost-effective photocatalyst using simple synthesis methodology is still a grand challenge. Herein, a low-cost transition metal, Cu-loaded one-dimensional TiO2 nanorods (Cu/TNR) were fabricated using an easy-to-use synthesis methodology for significant H2 production under simulated solar light. X-ray photoelectron spectral studies and electron microscopy measurements provide evidence to support the successful formation of the Cu/TNR catalyst under our experimental conditions. UV-vis DRS studies further demonstrate that introducing Cu on the surface of TNR substantially increases light absorption in the visible range. Notably, the Cu/TNR catalyst with optimum Cu content, achieved a remarkable H2 production with a yield of 39,239 µmol/g after 3 h of solar light illumination, representing 7.4- and 27.7-fold enhancements against TNR and commercial P25, respectively. The notably improved H2 evolution activity of the target Cu/TNR catalyst was primarily attributed to its excellent separation and efficiently hampered recombination of photoexcited electron-hole pairs. The Cu/TNR catalyst is, therefore, a potential candidate for photocatalytic green energy applications.

• Nuclear Engineering and Technology
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• 제55권9호
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• pp.3401-3408
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• 2023

In this study, we used the Monte Carlo N-Particle program to simulate the gamma-ray spectra obtained from plastic scintillators holes filled with bismuth nanoparticles. We confirmed that the incorporation of bismuth nanoparticles into a plastic scintillator enhances its performance for gamma-ray spectroscopy using the subtraction method. The subtracted energy spectra obtained from the bismuth-nanoparticle-incorporated and the original plastic scintillator exhibit a distinct energy peak that does not appear in the corresponding original spectra. We varied the diameter and depth of the bismuth-filled holes to determine the optimal hole design for gamma-ray spectroscopy using the subtraction method. We evaluated the energy resolutions of the energy peaks in the gamma-ray spectra to estimate the effects of the bismuth nanoparticles and determine their optimum volume in the plastic scintillator. In addition, we calculated the peak-to-total ratio of the energy spectrum to evaluate the energy measuring limit of the bismuth nanoparticle-containing plastic scintillator using the subtraction method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.213-213
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• 2013

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.1439-1444
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• 2005

Induction motors are the most commonly used electrical drives because they are rugged, mechanically simple, adaptable to widely different operating conditions, and simple to control. The most common faults in squirrel-cage induction motors are bearing, stator and rotor faults. Surveys conducted by the IEEE and EPRI show that the most common fault in induction motor is bearing failure (${\sim}$40% of failure). Thence, this paper addresses experimental results for diagnosing faults with different rolling element bearing damage via motor current spectral analysis. Rolling element bearings generally consist of two rings, an inner and outer, between which a set of balls or rollers rotate in raceways. We set the experimental test bed to detect the rolling-element bearing misalignment of 3 type induction motors with normal condition bearing system, shaft deflection system by external force and a hole drilled through the outer race of the shaft end bearing of the four pole test motor. This paper takes the initial step of investigating the efficacy of current monitoring for bearing fault detection by incipient bearing failure. The failure modes are reviewed and the characteristics of bearing frequency associated with the physical construction of the bearings are defined. The effects on the stator current spectrum are described and related frequencies are also determined. This is an important result in the formulation of a fault detection scheme that monitors the stator currents. We utilized the FFT, Wavelet analysis and averaging signal pattern by inner product tool to analyze stator current components. The test results clearly illustrate that the stator signature can be used to identify the presence of a bearing fault.

• 한국음향학회지
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• 제14권1호
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• pp.73-80
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• 1995

본 논문에서는 Polarity Thresholding(PT) 알고리즘을 원자력 발전소의 중요 배관 재료인 스테인레스강(SUS-304) 탐상에 응용하여 초음파 수신신호를 개선시키는 방법을 연구하였다. PT 알고리즘은 수신신호의 스펙트럼을 분할하여 얻은 각각의 주파수분할 신호들이 갖는, 결정립에 의한 간섭패턴의 분산적 신호와 결함에 의한 비분산적 신호를 구분하여 S/N 비를 개선시키는 것이다. 실험을 위하여, 실제 검사부위의 특성과 유사하게 스테인레스강을 각각 1125, 1150, 1175, $1200^\circ{C}$로 열처리하였고, 시료의 배면에 원통형 결함을 인공 가공하였다. 중심주파수가 5MHz인 초음파변환기를 사용하여, 펄스-반사법에 의해 데이터를 획득한 후 PT 알고리즘을 적용한 결과 개선된 S/N 비는 평균 14.2 dB로 나타났다.

• 천문학회보
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• 제36권2호
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• pp.61.1-61.1
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• 2011

We have performed simultaneous observations at 22GHz and 43GHz on AGNs hosted by elliptical galaxies using KVN radio telescope. We have constructed the sample, based on two major surveys in radio and optical band, i.e. Faint Images of the Radio Sky at Twenty-Centimeters (FIRST) and Sloan Digital Sky Survey (SDSS) DR7, respectively. We restricted the redshift range 0.01 < z < 0.06 and the absolute magnitude Mr < -19.4 in order to satisfy volume limited sample. We also checked clear detection of four distinctive emission lines ([NII], [OIII], $H{\alpha}$, $H{\beta}$) so as to utilize on BPT diagram, distinguishing AGNs from star-forming galaxies. Elliptical galaxies have been selected by visual inspection making use of SDSS optical images. Then, we cross-matched the elliptical galaxies with FIRST detections. About 35% of the galaxies have been detected throughout KVN observations. We derive spectral index, applying the flux of different radio frequencies from FIRST (1.4GHz) and KVN (22GHz) and classify into steep, flat or inverted spectrum. We have found that most of the detected galaxies have flat spectrum while the rest of them have steep spectrum. This implies that a number of detected galaxies might have compact structure associated with the central region of the galaxies. The relation between black hole mass and radio luminosity has shown relatively tighter correlation in high frequency than in low frequency, which confirms that high frequency in radio band is appropriate to study the center of the galaxies.

• 한국재료학회지
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• 제19권5호
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• pp.240-244
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• 2009

Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of $70{\AA}$-TCTA/$90{\AA}$-$TCTA_[0.5}TPBI_{0.5}$/$90{\AA}$-TPBI doped with $Ir(ppy)_3$ of 8% and an undoped layer of $50{\AA}$-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of $300{\AA}$, $500{\AA}$, and $700{\AA}$ were used as an electron transport layer. The device with $500{\AA}$-SFC137 showed the luminance of $48,300\;cd/m^2$ at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of $230\;cd/m^2$. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).