• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.214-219
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• 2002

The influence of ultraviolet (UV) irradiation and corona on the surface degradation of high temperature vulcanized (HTV) silicone rubber used for outdoor insulation through measuring surface voltage decay after corona charging, surface resistivity, contact angle and X-ray photoelectron spectroscopy (XPS) analysis was studied. The surface resistivity calculated by the surface voltage decay was compared with a value directly obtained from the three electrode method having the guard ring electrode. A good agreement between the two methods for surface resistivity was obtained. UV treated specimens showed the slower decrease of surface voltage decay, while the corona exposed specimens showed a dramatically faster decrease. Although both artificial treatments cause the same oxidative products, which was confirmed with XPS, we could distinguish the difference between the reactions of the two treatments by monitoring the surface voltage decay on corona-charged specimen. In addition, we could derive the specific surface states of the silicone rubber treated by accelerated artificial aging factors and the degradation process.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.6-10
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• 2001

Ultrafine $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ solid solution powders synthesized by the glycine-nitrate process, with specific surface areas of $19-23\;\textrm{m}^2$/g were sintered at $1500^{\circ}C$ for various sintering times and then their electrical characteristics were investigated using AC impedance and four-point probe measurements. The electrical resistivity of the sintered $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ bodies showed the minimum value at the sintering time of 10 hrs. The minimum total resistivity of the $(CeO_2)_{0.9}(Gd_2O_3)_{0.1}$ bodies sintered at $1500^{\circ}C$ for 10 hrs seems to result from the lowest activation energy for the electrical resistivity by the combination between the activation energies for the resistivities at the grain interior and grain boundary.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.12
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• pp.1995-2000
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• 1989

The ion beam system of 20keV C-W (Cockroft Walton) type composed of the AuGe alloy LMIS(Liquid Metal Ion Source) has been designed and constructed. For the fabrication of the ohmic contact to the n-GaAs, the ion beam extracted from the AuGe alloy source was implanted into the n-GaAs, and it was measured by contact resistivity. The stable AuGe ion beam(2.5\ulcorner/cm\ulcorner was obtained at the extraction voltage of 14.5kV. The measurements of the contact resistivity were done by the TLM (Transmission Line Model) method and the specific contact resistivity was found to be 2.4x10**-5 \ulcornercm\ulcornerfor the implanted sample by the 1.9x10**20/cm**3 and the annealed sample at 30\ulcorner for 2 min.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1997.10a
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• pp.237-243
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• 1997

Most outdoor sounds go from sources relatively near the ground to receivers near the ground. When either source or receiver are near the ground, interference can occur between the direct sound and that reflected at the ground which travels a slightly longer path. The sound pressure at the receiver is very different depending on the state of ground surface i.e. ground impedance. Ground impedances could be characterized by the value of a single parameter, namely the flow resistivity of the ground surface. This study suggests the measurement method of the flow resistivity using two microphones and predicts the flow resistivities of various ground surfaces.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.248-255
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• 2012

AlN thin films containing various amounts of Co, AlN-Co, and Al-Co alloy particles were prepared using a two-facing-target type dc reactive sputtering (TFTS) system. The as-deposited films exhibited the variable nature expected from an AlN-rich phase, and an amorphous-like phase, depending on the Co content in the films. Specific favorable microstructures were prepared by optimizing annealing conditions. Those microstructures and their magnetic properties and resistivity were investigated. As-deposited films showed very small saturation magnetization and an amorphous-like structure. However, when annealed, the as-deposited amorphous-like phase decomposes into phases of AlN, Co and Al-Co. These annealing induced changes in the microstructure improve the magnetization and resistivity of the films. Further improvement of soft magnetic properties could lead to the material being used for high density magnetic recording head material.

• The Journal of Engineering Geology
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• v.31 no.2
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• pp.187-197
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• 2021

Clay mineral content of weathered zone is a key parameter for landslide studies. Electrical resistivity tomography is usually performed to delineate the geometry of complex landslides and to identify the sliding surface. In clay-bearing weathered zone, parallel resistivity Archie equation is employed to investigate the effect of conductivity added (resistivity reduced) by clay minerals of kaolinite and montmorillonite, which is dependent on their specific surface area and cation exchange capacities (CEC). A decrease of overall resistivity and apparent formation factor is observed with increasing pore-water resistivity, significantly in montmorillonite. Formation factor is found decreased with increasing porosity and decreasing cementation factor. Parallel Archie equation was applied to the electrical resistivity data from the test area (Sinjindo-ri, Taean-gun, Chungcheongnam-do, Korea) which experienced land creeping in the year of 2014. A panel test with varying clay-mineral contents provides the best fit section when the theoretical section constructed with the assumed contents approaches the field section, from which the clay-mineral content of the weathered zone is estimated to be approximately 10%. Resistivity interpretation schemes including the clay mineral contents for land creeping studies explored in this paper can be challenged more when porosity, saturation, and pore-water resistivity are provided and they are included in the numerical resistivity modeling.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.29-33
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• 2003

Material and electrical properties of copper-based ohmic contacts on n-type 4H-SiC were investigated for the effects of the post-annealing and the metal covering conditions. The ohmic contacts were prepared by sequential sputtering of Cu and Si layers on SiC substrate. The post-annealing treatment was performed using RTP (rapid thermal process) in vacuum and reduction ambient. The specific contact resistivity ($p_{c}$), sheet resistance ($R_{s}$), contact resistance ($R_{c}$), transfer length ($L_{T}$), were calculated from resistance (RT) versus contact spacing (d) measurements obtained from TLM (transmission line method) structure. The best result of the specific contact resistivity was obtained for the sample annealed in the reduction ambient as $p_{c}= 1.0 \times 10^{-6}\Omega \textrm{cm}^2$. The material properties of the copper contacts were also examined by using XRD. The results showed that copper silicide was formed on SiC as a result of intermixing Cu and Si layer.

• Composites Research
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• v.25 no.6
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• pp.172-177
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• 2012

For the manufacture of low resistance Si-SiC composite, the properties of reaction sintering in the green body of various mixed ${\alpha}$-SiC powder size with the various carbon contents from 0wt% to 20wt% were investigated. The samples preparation was green body by CIP method under this condition, molten silicon infiltration process was conducted to reaction bonded silicon carbide. the results of sintered density, 3-point bending strength and resistance of analysis showed that varied carbon and silicon melt reacted to convert to fine ${\beta}$-SiC particle and the structure was changed to dense material. The amount of fine ${\beta}$-SiC particle was gradually increased as carbon content increase. According to mixed composite, it's mechanical and specific resistivity properties was strongly influenced by carbon content within 10wt% more then carbon content 10wt% was strongly influenced by phase transition.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.481-485
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• 2002

In this study, we fabricated the PBH-LD by meltback method using the LPE. The PBH-LDs are analyzed the leakage current that flows through leakage current path like the p-n diode and p-n-p-n current blocking layer. We observed the variation of threshold current with the leakage width $W_{ι}$. As a consequence, we confirmed that the threshold current became low in the decrease of the leakage width and in the increase of the ratio of specific resistivity of leakage region to active region. We also compared between the calculated threshold current in the absence of leakage region and the measured threshold current in the device. As a result, the ratio of specific resistivity was about 0.5 in the measured LDs, which have the width of a active layer of 1.4${\mu}{\textrm}{m}$ and leakage width of 0.6${\mu}{\textrm}{m}$.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.8-14
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• 1997

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.