• 전기전자학회논문지
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• 제17권2호
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• pp.129-134
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• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.107-111
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• 2004

This work describes the effect of composite conductor on the characteristics of electric double layer capacitor. Test cell, which was fabricated with conducting composite consisted of 80％ of SPB and 20％ of VGCF, exhibits the better tate capability and the lower resistance than those of the cells fabricated with single electronic conductor. These enhanced properties could be related with the decrease of contact resistance between the activated carbon powders.

• 조명전기설비학회논문지
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• 제27권7호
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• pp.82-88
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• 2013

IEC standards do not require to limit the earthing resistance of the concrete-embedded foundation earthing electrode which is installed to a specific value. However, in Korea the value of $5{\Omega}$ and below applies to the earthing resistance for a domestic customer whose receiving voltage is 22.9kV. This paper calculates the minimum area and volume of the concrete-embedded foundation earthing electrode in order to obtain a specific value of the earthing resistance when the electrode of the building's lightning protection system and that of its power system are interconnected. It also suggested the most appropriate method of installing the foundation earthing electrode, taking the electric characteristics of concrete into account.

• 한국안전학회지
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• 제24권5호
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• pp.6-12
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• 2009

This study performed an experiment for the danger of an electric shock in the human body, which is directly touched or approached to the exposure of buried metals in a leak caused by certain ground faults at a buried cable in street lamp. In the results of the experiment, the dangerous of electric shocks due to the earth specific resistance and wet and submersion of the earth surface represents a high level as the human body is directly touched to the buried metal at a leak point. In addition, it can be seen that the safety of the human body is influenced by the earth specific resistance, separated distance from buried metals, and shape of buried metals at around the leak point.

• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2008년도 공동학술대회
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• pp.131-136
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• 2008

일주문 주변 지반의 지반 구조 및 상태를 파악하고 복원시 보존, 보수의 방향 및 설계자료를 제공하기 위해, 탄성파 탐사, 전기비저항탐사, 평판재하시험 등의 비파괴 지구물리탐사를 수행하였다. 전기비저항탐사결과, 전반적인 전기비저항분포는 50-1300 ohm-m의 범위를 보여주고 있다. 또한 일주문 석주 남쪽 1m, 석주 3번과 4번 사이, 석주 2번과 3번 북쪽 1m 위치에서 주위보다 비교적 낮은 전기비저항 이상을 보여주고 있다. 석주 3번과 4번 사이에서 나타나는 낮은 전기비저항 이상은 탄성파 반사법 탐사결과에서 나타나는 이상구간과 일치함을 보여주고 있다. 평판재하시험 결과 허용지지력은 $10.70tf/m^2$이상이며, 이때의 침하량은 19.635mm로 산정되었다. 일주문 복원시 설계하중은 가정치를 적용하여 계산한 결과 $16.37t/m^2$로 계산되었으며, 이는 허용지지력을 훨씬 상회하므로 기초지반에 대한 강화대책이 반드시 필요한 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1140-1143
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• 2002

This work describes the effect of conducting composite on the characteristics of electric double layer capacitor. The cell, which was fabricated with conducting composite consisted of 50 wt.% of SPB and 50 wt.% of VGCF, exhibits the higher specific capacitance, the lower resistance and the better rate capability than those of the cells fabricated with each single electronic conductor. These enhanced properties could be related with the dense structure of electrode.

• 대한화학회지
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• 제5권1호
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• pp.22-25
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• 1961

The attempt to distinguish between graphite and domestic anthracite was means, especially electric resistance. The specific resistance values of various coals and graphites were determined by Wheaston Bridge equipped with more finely adjustable slide wire. The result of graphite was in the below of 0.08 ohm-cm and that of anthracite has $10^{-1}{\sim}10^1$ohm-cm range.

• 한국환경과학회지
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• 제7권1호
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• pp.36-40
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• 1998

This study was carried out to investigate the collection Efficiency of mass in collector step at the different of physical gas characterization. This work has focused on the dependence of the collection efficiency of mass in the collector zone of a two-stage set up field with gas temperature T and the dew point tmeperature. To identify the dependence of the mass collection efficiency on the Bounded plate of the collector zone MP.k by the spectre electric resistance of dust $p_e$. and the relative humidify ${\varphi}$, 20 at- tempts have been made with three different gas temperature ($50{\circ}C, 80{\circ}C, 110{\circ}C$) at different dew point. At the specific electric resistance of dust $p_e$=$10^6{\Omega}m$ which relative humidity corresponds to $\phi$ > 15%, a easy rise of the sounded plate secluded dust mass share was measured atwain. As the result of the higher cohesion imprisonment power due to the adsorbtion of particle, the rinse of the relative humidity developed on the particle surface. Therefore, the collection efficiency of mass was not predominant the high temperature T in the collector zone, neither was the pecific ellectric resistance of dust dependent.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.673-681
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• 2014

In this paper, a novel low specific on-resistance SOI LDMOS Device with P+P-top layer in the drift region is proposed and investigated using a two dimensional device simulator, MEDICI. The structure is characterized by a heavily-doped $P^+$ region which is connected to the P-top layer in the drift region. The $P^+$ region can modulates the surface electric field profile, increases the drift doping concentration and reduces the sensitivity of the breakdown voltage on the geometry parameters. Compared to the conventional D-RESURF device, a 25.8% decrease in specific on-resistance and a 48.2% increase in figure of merit can be obtained in the novel device. Furthermore, the novel $P^+P$-top device also present cost efficiency due to the fact that the $P^+$ region can be fabricated together with the P-type body contact region without any additional mask.

• ETRI Journal
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• 제34권1호
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.