• Journal of IKEEE
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• v.17 no.2
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• pp.129-134
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• 2013

For the conventional power metal-oxide semiconductor field-effect transistor (MOSFET) device structure, there exists a tradeoff relationship between specific on-resistance ($R_{ON.SP}$) and breakdown voltage ($V_{BR}$). In order to overcome the tradeoff relationship, a uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) structure is studied and designed. The structure modeling considering doping concentrations is performed, and the distributions at breakdown voltages and the electric fields in a SJ TMOSFET are analyzed. The simulations are successfully optimized by the using of the SILVACO TCAD 2D device simulator, Atlas. In this paper, the specific on-resistance of the SJ TMOSFET is successfully obtained 0.96 $m{\Omega}{\cdot}cm^2$, which is of lesser value than the required one of 1.2 $m{\Omega}{\cdot}cm^2$ at the class of 100 V and 100 A for BLDC motor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.107-111
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• 2004

This work describes the effect of composite conductor on the characteristics of electric double layer capacitor. Test cell, which was fabricated with conducting composite consisted of 80％ of SPB and 20％ of VGCF, exhibits the better tate capability and the lower resistance than those of the cells fabricated with single electronic conductor. These enhanced properties could be related with the decrease of contact resistance between the activated carbon powders.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.7
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• pp.82-88
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• 2013

IEC standards do not require to limit the earthing resistance of the concrete-embedded foundation earthing electrode which is installed to a specific value. However, in Korea the value of $5{\Omega}$ and below applies to the earthing resistance for a domestic customer whose receiving voltage is 22.9kV. This paper calculates the minimum area and volume of the concrete-embedded foundation earthing electrode in order to obtain a specific value of the earthing resistance when the electrode of the building's lightning protection system and that of its power system are interconnected. It also suggested the most appropriate method of installing the foundation earthing electrode, taking the electric characteristics of concrete into account.

• Journal of the Korean Society of Safety
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• v.24 no.5
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• pp.6-12
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• 2009

This study performed an experiment for the danger of an electric shock in the human body, which is directly touched or approached to the exposure of buried metals in a leak caused by certain ground faults at a buried cable in street lamp. In the results of the experiment, the dangerous of electric shocks due to the earth specific resistance and wet and submersion of the earth surface represents a high level as the human body is directly touched to the buried metal at a leak point. In addition, it can be seen that the safety of the human body is influenced by the earth specific resistance, separated distance from buried metals, and shape of buried metals at around the leak point.

• 한국지구물리탐사학회:학술대회논문집
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• 2008.10a
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• pp.131-136
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• 2008

We performed a non-destructive geophysical survey such as an elastic wave survey, electric specific resistance survey, plate loading test, etc. in order to grasp the structure and status of the ground around the pillar gate and to provide the directions and design data for preservation and maintenance during reconstruction. The result of electric specific resistance survey shows 50-1300 ohm-m range of general electric specific resistance distribution. Besides, the positions around 1m south of stone pillars, between stone pillar No.3 and 4, and 1m north of stone pillar No.2 and 3 show abnormality of relatively lower electric specific resistance than their surroundings. The abnormality of low electric specific resistance appearing between stone pillar No.3 and 4 shows consistency with the abnormal section appearing from the result of elastic wave reflection survey. The result of a plate loading test shows that allowable bearing force is over $10.70tf/m^2$, and the settlement amount at this time was calculated as 19.635mm. The design load during reconstruction of pillar gates was calculated as $16.37t/m^2$ by applying assumption values, which is far more than the allowable bearing force, so it is judged that a measure to strengthen the foundation ground is necessary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1140-1143
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• 2002

This work describes the effect of conducting composite on the characteristics of electric double layer capacitor. The cell, which was fabricated with conducting composite consisted of 50 wt.% of SPB and 50 wt.% of VGCF, exhibits the higher specific capacitance, the lower resistance and the better rate capability than those of the cells fabricated with each single electronic conductor. These enhanced properties could be related with the dense structure of electrode.

• Journal of the Korean Chemical Society
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• v.5 no.1
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• pp.22-25
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• 1961

The attempt to distinguish between graphite and domestic anthracite was means, especially electric resistance. The specific resistance values of various coals and graphites were determined by Wheaston Bridge equipped with more finely adjustable slide wire. The result of graphite was in the below of 0.08 ohm-cm and that of anthracite has $10^{-1}{\sim}10^1$ohm-cm range.

• Journal of Environmental Science International
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• v.7 no.1
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• pp.36-40
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• 1998

This study was carried out to investigate the collection Efficiency of mass in collector step at the different of physical gas characterization. This work has focused on the dependence of the collection efficiency of mass in the collector zone of a two-stage set up field with gas temperature T and the dew point tmeperature. To identify the dependence of the mass collection efficiency on the Bounded plate of the collector zone MP.k by the spectre electric resistance of dust $p_e$. and the relative humidify ${\varphi}$, 20 at- tempts have been made with three different gas temperature ($50{\circ}C, 80{\circ}C, 110{\circ}C$) at different dew point. At the specific electric resistance of dust $p_e$=$10^6{\Omega}m$ which relative humidity corresponds to $\phi$ > 15%, a easy rise of the sounded plate secluded dust mass share was measured atwain. As the result of the higher cohesion imprisonment power due to the adsorbtion of particle, the rinse of the relative humidity developed on the particle surface. Therefore, the collection efficiency of mass was not predominant the high temperature T in the collector zone, neither was the pecific ellectric resistance of dust dependent.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.673-681
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• 2014

In this paper, a novel low specific on-resistance SOI LDMOS Device with P+P-top layer in the drift region is proposed and investigated using a two dimensional device simulator, MEDICI. The structure is characterized by a heavily-doped $P^+$ region which is connected to the P-top layer in the drift region. The $P^+$ region can modulates the surface electric field profile, increases the drift doping concentration and reduces the sensitivity of the breakdown voltage on the geometry parameters. Compared to the conventional D-RESURF device, a 25.8% decrease in specific on-resistance and a 48.2% increase in figure of merit can be obtained in the novel device. Furthermore, the novel $P^+P$-top device also present cost efficiency due to the fact that the $P^+$ region can be fabricated together with the P-type body contact region without any additional mask.

• ETRI Journal
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• v.34 no.1
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.