• Analytical Science and Technology
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• v.9 no.1
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• pp.43-51
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• 1996

We have discussed on the deintercalation process of Li-EaGICs and Li-EGICs synthesized under pressure and temperature by spontaneous oxidation reaction of those compounds based on the results of X-ray diffraction, thermal analysis and electrical specific resistivity analysis. According to the results of the X-ray analysis for the intercalation process, we have found that the stage 1 for Li-EaGICs and Li-EGICs were not completly formed, but their lower stages were formed mainly. And from this results of the deintercalation process, we have found that the deintercalation process did not occur any more after 4 weeks, and the Li-EGDICs have more residual lithium metals than LiEaGDICs between the graphite interlayers. According to the thermal decomposition analysis, Li-two compounds had included very hard exothermic reaction. And we have found that these compounds did not occrurred deintercalation reaction above $400^{\circ}C$. According to the results of the electrical specific resistivity measurements, Li-EGDICs have relatively lower electrical specific resistivity than Li-EaGDICs, and Li-EaGDICs showed a formation of the ideal curve. From these results, we can suggest that Li-EaGDICs have a better properties as an anode material secondary than Li-EGICs.

• Journal of the Korea Institute of Military Science and Technology
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• v.22 no.1
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• pp.20-26
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• 2019

In this paper, we propose measurement based numerical resistivity model for low energy exploding foil initiator (LEEFI) of electronic safety and arming device(ESAD). A resistivity model describes a behavior of variable resistance in LEEFI by firing current. The previous resistivity model was based on high energy detonator applications as explosive bridge wire and exploding foil initiator. Therefore, to estimate the voltage, current, and burst time of LEEFI, a resistivity model suitable for LEEFI is needed. For the modeling of resistivity of LEEFI, we propose a specific action based equation which represents a behavior of LEEFI when firing current is applied. To verify the proposed model, we analyze a firing current transmission path to obtain parasitic impedance. We experimentally verify that the proposed resistivity model offers precise estimation for the behavior of variable resistance in LEEFI.

• The Journal of Engineering Geology
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• v.31 no.4
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• pp.507-522
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• 2021

Specific survey objectives often cannot be met using only one geophysical method, as each method's results are influenced by the specific physical properties of subsurface materials. In particular, areas susceptible to geological hazards require investigation using more than one method in order to reduce risks to life and property. Instead of analyzing the results from each method separately, this work develops a four-quadrant criterion for classifying areas of levees as safe or weak. The assessment is based on statistically determined thresholds of seismic velocity (P-wave velocity from seismic refraction and S-wave velocity from multichannel analysis of surface waves) and electrical resistivity. Thresholds are determined by subtracting the standard deviation from the mean during performance testing of this correlation technique applied to model data of four horizontal and inclined fracture zones. Compared with results from the crossplot of resistivity and P-wave velocity, crossplot analysis using resistivity and S-wave velocity data provides more reliable information on the soil type, ground stiffness, and lithological characteristics of the levee system. A loose and sandy zone (represented by low S-wave velocity and high resistivity) falling within the second quadrant is interpreted to be a weak zone. This interpretation is well supported by the N values from standard penetrating test for the central core.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.219-224
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• 2001

Pd/Ge/Ti/Pt ohmic contact to n-type InCaAs was investigated. Minimum specific contact resistivity of $3.7\times10^{-6}\; \Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $400^{\circ}C$ for 10 seconds. This was related to the formation of Pd-Ge compounds and the in-diffusion of Ge atoms to InGaAs surface. However, the specific contact resistivity increased slightly to $low-10^5\; \Omega\textrm{cm}^2$ in the case of longer annealing time. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.706-714
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• 1998

The MgO-{{{{ { {Al }_{2 }O }_{3 } }}-{{{{ { {SiO }_{2 } }_{ } }}system containing alumina powder was fabricated sintered at various temperature and analyzed in order to study the sintering mechanism and crystallization characteristics. The specimen composed of glass powder with average particle size of 8.27 $\mu\textrm{m}$ and 0-40 vol% alumina powder were sint-ered for 3 hrs at the temperature between 850$^{\circ}C$ and 1350$^{\circ}C$ The sintering mechanism consists of the redis-tribution of particles occuring at 750$^{\circ}C$ and the viscous flow at 850∼950$^{\circ}C$. The degree of crystallization and sintering temperatue were dependent upon the ratio of glass/alumina. The second phase from the reaction between glass and alumina was not observed which was confirmed by XRD and properties analysis. The density dielectric constant and specific resistivity of specimen were 2.30∼3.26g/cm2 5.8∼7.38 at 1 GHz density dielectric constant and specific resistivity of specimen were 2.30∼3.26g/cm3 5.8∼7.38 at 1GHz and 1.23∼4.70${\times}$107 $\Omega$$.$m respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.520-526
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• 2007

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• 한국지구물리탐사학회:학술대회논문집
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• 2008.10a
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• pp.113-118
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• 2008

Among the geophysical methods, Ground Penetrating Radar (GPR) and Electrical Resistivity Tomography (ERT) comprise the most promising techniques in resolving buried archaeological structures in urban territories. In this work, two case studies which involve an integrated geophysical survey employing the surface three dimensional (3D) ERT and GPR techniques, in order to archaeologically characterize the investigated areas, are presented. Totally more than 4000 square meters were investigated from the test field sites, which are located at the centre of two of the most populated cities of the island of Crete, in Greece. The ERT and the GPR data were collected along dense and parallel profiles. The subsurface resistivity structure was reconstructed by processing the apparent resistivity data with a 3D inversion algorithm. The GPR sections were processed with a systematic way applying specific filters to the data in order to enhance their information context. Finally, horizontal depth slices representing the 3D variation of the physical properties were created and the geophysical anomalies were interpreted in terms of possible archaeological structures. The subsequent excavations in one of the sites verified the geophysical results, enhancing the applicability of ERT and GPR techniques in the archaeological exploration of urban territories.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.567-574
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• 1995

The effect of MnO2 addition to 0.1mol% Sb2O3-doped BaTiO3 ceramics on microstructure and PTCR characteristics was studied. The PTCR characteristics was observed when 0.01 and 0.02 wt% MnO2 were added and sintered at 132$0^{\circ}C$ for 1 hour. The characteristics can be explained by the changes in the number and size of the abnormal grain growth due to the liquid phase during sintering. when the amount of MnO2 addition was 0.03 wt%, the sample showed NTCR characteristics with room-temperature resistivity over 109 Ωm regardless of the sintering temperature. This behavior can be described by the microstructure change due to the abnormal grain growth and charge compensation effect by MnO2 added. The room-temperature resistivity was increased as the amount of MnO2 was increased. And the specific resistivity ratio (pmax/pmin) showed maximum at 0.02wt% MnO2.