• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.3
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• pp.22-27
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• 1976

For linear IC design, one has to know the epi thickness, resistivity, and structure of buried island inserted between epi and substrate because the mask structure can only be changed for linear IC consisted of various type of transistors to be made for desired specific function. The interrelation of IC operational and saturation voltages with epi resistivity, theckness and divice structure are studied and presented in graphic forms so that IC design engineers can utilize them.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.703-712
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• 1997

The PTCR devices of BaTiO3 doped with Sb2O3, SiO2 were prepared by Liquid Addition Method(LPAM) where doping sources were used in the forms of Liquid. The amounts of doping in LPMA is smaller than that in solid state mixing method. Also the doping process in LPMA is very suitable for BaTiO3-based PTCR devices because it is easy to obtain homogeneous mixing and reproductivity. By optimizing the doping condition in BaTiO3 system, (0.09 mol% Sb2O3, 0.25 wt% SiO2 and 0.02 wt% MnO2) it was possible to fabricate BaTiO3-based PTCR devices whee the room-temperature resistivity and specific resistivity were 15{{{{ OMEGA }}cm and 2$\times$106 respectively.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.661-668
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• 2002

A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.

• Geophysics and Geophysical Exploration
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• v.9 no.4
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• pp.291-298
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• 2006

Resistivity method is a practical and effective geophysical technique to detect leakage zones in embankment dams. Generally, resistivity survey conducted along the crest assumes that the embankment dam has a 2D structure. However, the 3D topography of embankments distorts significantly resistivity data measured on anywhere of the dam. In this study, we analyse the influence from 3D effects created by specific dam geometry through the 3D finite element modeling technique. We compared 3D effects when resistivity surveys are carried out on the upstream slope, left edge of the crest, center of the crest, right edge of the crest and downstream slope. We ensure that 3D effect is greatly different according to the location of the survey line and data obtained on the downstream slope are most greatly influenced by 3D dam geometry. Also, resistivity data are more influenced by the electrical resistivity of materials constituting reservoir than 3D effects due to specific dam geometry. Furthermore, using resistivity data synthesized with 3D modeling program for an embankment dam model with leakage zone, we analyse the possibility of leakages detection from 2D resistivity surveys performed along the embankment dam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.

• Journal of the Korean earth science society
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• v.36 no.1
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• pp.59-67
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• 2015

An electrical resistivity survey is widely conducted for the safety management of embankment. In this study we investigated how a tidal variation affects the interpretation of electrical resistivity monitoring data of the embankment located in west coast. We monitored the variation of electrical resistivity on the coastal embankment where there was a high tidal variation for 3 days in every 3 hours. Electrical resistivity monitoring data showed a variation of resistivity distribution in specific area according to the time, which demonstrated some correlation with a tidal height variation. Therefore, we highly recommend that a tidal effect be considered when electrical resistivity survey is conducted on the embankment where there is a high tidal variation. For further study, we need a long term electrical resistivity monitoring and analyzing on tidal variation.

• Journal of the Korea institute for structural maintenance and inspection
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• v.18 no.5
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• pp.27-33
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• 2014

Electrical resistivity of concrete can be measured in a more rapid and simple way for estimating durability of the concrete, however, carbonation causes a result of misleading for durability testing because carbonation leads to a significant reduction in the permeability and porosity of concrete. The purpose of this study is to estimate and quantify the effect of carbonation of concrete on a surface electrical resistivity measurement. Samples of three mixes with difference w/c were prepared and exposed in a carbonation chamber for 330 days. The results show that carbonation leads high electrical resistivity. The increase is substantial and has been shown to proportional to the extent of the carbonation by some of extent. The relationship between electrical resistivity and carbonation depth is taken in the study. Resistivity ratio of carbonated concrete to air concrete decreased significantly from the specific carbonation depth, however, resistivity ratio of carbonated concrete to air concrete had a linear relation with carbonation depth. From the relationship between electrical resistivity and carbonation depth, it is expected that the result should be subsequently used as a calibration curve for estimating carbonated concrete to overcome the interruption effect of carbonation on regular measurements of the electrical resistivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.764-769
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• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1492-1493
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• 2006

Wenner 4-probe arrangement is used most widely by the method to measure soil resistivity and the measured data with the Wenner method are apparent resistivities of the soil. Therefore, the soil structure can be analyzed easily from the measured apparent resistivity, but the real soil resistivity is difficult to know correctly at a particular depth or at a specific location on earth surface. This paper introduces a method that can be used to decide the suitable burial depth and the electrode scale of a grounding rod effectively using soil structure analysis equipment based on the dipole-dipole method.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.