• 한국재료학회지
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• 제14권10호
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• Elastomers and Composites
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• 제31권5호
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• pp.335-340
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• 1996

In order to look into the internal structure and the properties in the silicone rubbers added reinforcing fillers; silica $additives(O{\sim}140phr)$, and to examine the behavior of charged particles, the properties of thermally stimulated current(TSC) and X-Ray diffraction are investigated, respectively. And then, from the TSC which are formed by applying the electric field of $2{\sim}5kV/mm$ to specimen at the temperature range from -150 to $260^{\circ}C$, the results are as follwing: In the case of non-filled specimen, four peaks of ${\delta},\;{\gamma},\;{\beta}\;and\;{\alpha}$ are obtained at the temperature of $-120^{\circ}C,\;-60^{\circ}C,\;20^{\circ}C\;and\;130^{\circ}C$, respectively and the case of filled specimen, three peaks of ${\delta},\;{\alpha}_2\;and\;{\alpha}_1$ are observed at the temperature of $-120^{\circ}C,\;80^{\circ}C\;and\;130^{\circ}C$, respectively. The origins of these peaks are that, the ${\delta}$ peak seems to the result from the contribution of side chain methyl radical, and the ${\gamma}$ peak from the depolarization of space charge polarization owing to be added impurity during manufacturing specimens, and the ${\beta}$ peak from the orientation of $Si-CH_3$ dipole, and the ${\alpha}_2$ near the temperature of $80^{\circ}C$ from hydroxyl in carboxylic radical, and finally, the ${\alpha}_1$ peak near the temperature of $130^{\circ}C$ from carboxyl acid that is formed by the thermal oxidation of high temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• 한국분말재료학회지
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• 제25권5호
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• pp.375-378
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• 2018

Conductive and dielectric SiC are fabricated using electroless plating of Ni-Fe films on SiC chopped fibers to obtain lightweight and high-strength microwave absorbers. The electroless plating of Ni-Fe films is achieved using a two-step process of surface sensitizing and metal plating. The complex permeability and permittivity are measured for the composite specimens with the metalized SiC chopped fibers dispersed in a silicone rubber matrix. The original non-coated SiC fibers exhibit considerable dielectric losses. The complex permeability spectrum does not change significantly with the Ni-Fe coating. Moreover, dielectric constant is sensitively increased with Ni-Fe coating, owing to the increase of the space charge polarization. The improvements in absorption capability (lower reflection loss and small matching thickness) are evident with Ni-Fe coating on SiC fibers. For the composite SiC fibers coated with Ni-Fe thin films, a -35 dB reflection loss is predicted at 7.6 GHz with a matching thickness of 4 mm.

• 한국안전학회지
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• 제11권2호
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• pp.60-66
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• 1996

In order to look into the internal structure and electrical properties of insulating Silicone rubbers added reinforcing fillers ; Silica(0-140 phr ), and to examine the behavior of charged particles, and the properties of thermally stimulated current (TSC) are investigated, respectively. From the TSC which are formed by applying the electric field of 2~5 ㎸/mm to specimen at temperature range from -150 to $270^{\circ}C$, the results arp as following. In the case of non-filled specimen, four peaks of $\delta$, $\gamma$ , $\beta$ and u are obtained at the temperature of $-120^{\circ}C$, $-60^{\circ}C$, $20^{\circ}C$ and $130^{\circ}C$, respectively and the case of filled specimen, three peaks of $\delta$, ${\alpha}_2$ and ${\alpha}_1$ are observed at the temperature of of $-120^{\circ}C$, $80^{\circ}C$ and $130^{\circ}C$, respectively. The origins of these peaks are that, the $\delta$ peak seems to the result from the contribution of side chain methyl radical, and the $\beta$ peak from the depolarization of space charge polarization owing to added imputity during during manufacturing specimens, and the $\beta$ peak from the orientation of $Si-CH_3$dipole, and the ${\alpha}_2$ near the temperature of $130^{\circ}C$ from carboxyl acid that is formed by the thermal oxidation of high temperature.

• 한국재료학회지
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• 제13권5호
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• pp.317-322
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• 2003

Bismuth layered structure ferroelectric thin films, $Bi_4$$Ti_3$$O_{12}$ / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti/$SiO_2$/Si(100) substrates by a sol-gel route. We investigated the Nb-doping effect on the grain orientation and ferroelectric properties. $Nb^{5＋}$ ion substitution for $Ti^{4＋}$ ion in perovskite layers of BTO decreased the degree of c-axis orientation and increased the remanent polarization (2Pr). The fatigue resistance of Nb-doped BTO thin film was shown to be superior to that of BTO, and the leakage current of Nb-doped BTO thin film was decreased about 1 order of magnitude compared with BTO. The improvement of ferroelectric properties with $Nb^{5＋}$ doping in BTO could be attributed to the changes in space charge densities and grain orientation in the thin film.

• 한국전자파학회논문지
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• 제19권9호
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• pp.1051-1057
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• 2008

본 논문에서는 연자성 금속 분말인 sendust를 flake화 과정을 통하여 형상과 입도를 변화시켜 전파 흡수체를 제작하고, 그 특성을 분석하였다. 먼저 attrition milling에 의해 입도를 달리한 세 종류의 flake sendust 분말과 지지 재인 CPE(Chlorinated Polyethylene)를 이용하여 전파 흡수체를 제작하고, 이 전파 흡수체로부터 재료 정수를 계산하여 입도에 따른 변화를 조사한 후 전파 흡수능을 측정하여 비교 분석하였다. 그 결과 평균 입도가 $140{\mu}m$인 flake sendust 분말로 제작된 전파 흡수체가 와전류 손실의 감소(복소비 투자율 증가)와 입자간의 정전 용량의 증가(복소비 유전율 증가)에 기인하여 고주파 대역에서 우수한 전파 흡수능을 보임을 확인하였다.

• 한국진공학회지
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• 제17권4호
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• pp.317-321
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• 2008

세라믹 강유전체 $0.65Pb(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ 고용체에 $ZrO_2$를 첨가하여 유전 및 초전 특성을 관찰하였다. 유전상수, 유전손실 및 초전계수의 측정온도는 상온에서 $250^{\circ}C$사이에서 측정되었다. 유전상수와 초전계수는 $0.2\;mol%ZrO_2$ 첨가에서 최대값을 얻었다. $ZrO_2$의 첨가량이 증가할수록 각 시료의 유전상수와 초전계수의 최대값은 낮은 온도로 이동하였고, 최대유전상수의 퍼짐현상은 증가하였다.

• 대한화학회지
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• 제53권1호
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• pp.42-50
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• 2009

유전율-분광법과 교류 전도도 측정 연구를 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에 시도하였다. 373-723K 온도와 100Hz-1MHz 주파수 영역에서 loss 탄젠트 (Tan$\delta$), 상대적 유전율 ($\varepsilon_{r}$) 그리고 교류 전도 도 ($\sigma_{ac}$)의 의존성을 혼입 유도체들에 대하여 조사하였다. 다양한 전도도 메커니즘이 존재하는데 MSLT-1과 MSLT-2의 경우에는 낮은 온도영역에서 전자에 의한 전도도를 보인다. MSLT-3의 경우에는 금지된 층간 이온 전 도도가 전자 전도도와 함께 존재한다. 이러한 층간 이온 전도도는 모든 혼입 유도체들에 대하여 중간 온도 영역에 존재한다. 가장 높은 온도 영역에서는 MSLT-1과 MSLT-2의 경우에는 이온 전도도와 polaron에 의한 전도도가 존재하고 MSLT-3에 대하여는 이온 전도도 만이 존재한다. 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에서 Loss 탄젠트 (Tan$\delta$)는 전자 전도도와 쌍극자의 위치, 그리고 공간 전하 분극화에 기인한다. 상대적 유전율의 증가는 층간 에 쌍극자 수의 증가에 기인하고 반면 상대적 유전율의 감소는 높은 혼입율에 따른 누전 전류의 증가에 기인한다.

• 한국자기학회지
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• 제14권4호
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• pp.131-137
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• 2004

이동통신주파수 대역에서 박형의 전파흡수체를 제작하기 위해 순철 분말을 흡수 충진재로 사용한 고무 복합체의 고주파 특성(복소투자율, 복소유전율) 및 전파흡수특성에 대해 조사하였다. 주요 실험변수는 순철 분말의 초기입도와 형상(구형, 압분체) 변화였다. Attrition milling에 의해 두께가 표피두께보다 작은 순철 압분체를 제작함으로써 임피던스정합 조건에 근접하는 고투자율과 고유전율을 동시에 얻을 수 있었다. 이는 milling에 의해 구형에서 평판상으로 모양이 바뀜에 따라 와전류 손실이 감소하고(복소투자율의 증가), 압분체 간의 정전용량이 증가한 것(복소유전율의 증가)에 기인한다. 초기입도가 10$\mu\textrm{m}$인 순철 압분체를 흡수 충진재로 사용함으로써 이동통신주파수 대역(0.8-2.0㎓)에서 반사손실이 -5㏈(70% 전력흡수율), 두께가 0.7mm 수준인 박형의 전파흡수체를 제안할 수 있었다.